Untitled
Abstract: No abstract text available
Text: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e
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OCR Scan
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32-Pin
Am28F010A
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PDF
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Untitled
Abstract: No abstract text available
Text: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ ■ CMOS Low power consumption Flasherase Electrical Bulk Chip-Erase
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OCR Scan
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Am28F256
32-Pin
0257S2Ã
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PDF
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28F010
Abstract: AM28F010 AMD 478 socket pinout
Text: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption
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OCR Scan
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G030715
T-46-13-27
Am28F010
-32-Pin
32-Pin
100mA
Am28F010-95C4JC
Am28F010-95C3JC
28F010
AMD 478 socket pinout
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PDF
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am29f010
Abstract: No abstract text available
Text: a Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power consumption ■ Compatible with JEDEC-standard commands
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OCR Scan
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Am29F010
32-pin
Am29F040
02S7S2A
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PDF
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Untitled
Abstract: No abstract text available
Text: a Am27X512 512 Kilobit 65,536 x 8-Bit CMOS ExpressROM Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ High noise immunity ■ Low power dissipation — Factory optimized programming — Fully tested and guaranteed
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OCR Scan
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Am27X512
Am33C93A
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PDF
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27X128
Abstract: No abstract text available
Text: a Advanced Micro Devices Am27X128 128 Kilobit 16,384 x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • ■ As an O TP EPROM alternative: ■ ±10% pow er supply tolerance — Factory optim ized programming ■ High noise im m unity — Fully tested and guaranteed
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OCR Scan
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Am27X128
27X128
KS000010
27X128
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PDF
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AM2BF010
Abstract: 28F010 TRANSISTOR TZ am28f010-150 P5752 11559F-12 11559F-2 am28f010-200
Text: FINAL a A m 2 8 F 0 1 0 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V — 90 ns maximum access time ■ CMOS Low power consumption
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OCR Scan
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Am28F010
32-Pin
AM2BF010
28F010
TRANSISTOR TZ
am28f010-150
P5752
11559F-12
11559F-2
am28f010-200
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PDF
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AM27C128
Abstract: zi11
Text: ADV MI C RO MEMORY 4 ÔE D 055752Û 003G327 1 «AMD4 T -4 6 -1 3-29 & Advanced Micro Devices Am27C128 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tlme-55 ns JEDEC-approved pinout ■ Low power consumption: -1 0 0 pA maximum standby current
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OCR Scan
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003G327
T-46-13â
Am27C128
tlme-55
128K-bit,
T-46-13-29
1420-009A
zi11
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PDF
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29F080
Abstract: No abstract text available
Text: P R E L IM IN A R Y Am29F080 8 Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ — Minimizes system level power requirements
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OCR Scan
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Am29F080
44-pin
02S752Ã
a0337bl
29F080
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PDF
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Untitled
Abstract: No abstract text available
Text: ADV MICRO -CMEflORY> flö 0257528 ADV M IC R O DE~| [ ] 2 5 ? S2 0 M E M O R Y 88D 8 -BET 24806 DD^MÖOb S J " D T -¥ £ -f3 -Z 5 (A m 2 7 6 4 A , A m 2 7 1 2 8 A , A m 2 7 2 5 6 ) 03 I CO DISTINCTIVE CHARACTERISTICS • • • Fast a ccess tim es — as low as 200 ns
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OCR Scan
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7128A,
06842C
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PDF
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Am26F010
Abstract: am26f AM28F010
Text: a Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • H igh p e rfo rm a n ce ■ — 90 ns maximum access time ■ CMOS Lo w p o w e r c o n s u m p tio n ■ ■ — No data retention power consumption
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OCR Scan
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Am28F010
32-Pin
0257S2Ã
D033TÃ
Am26F010
am26f
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PDF
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programming AM29F400
Abstract: TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB
Text: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ ■ — Minimizes system level power requirements
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OCR Scan
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Am29F400T/Am29F400B
8-Bit/262
16-Bit)
44-pin
48-pin
D257S2Ã
003S5bb
programming AM29F400
TSOP 48 Package am29f400
AM29F400T
AM29F400
Am29f400 equivalent
AM29 FLASH
OES752
29f400b
AM29F400TB
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PDF
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amd socket 940 pinout
Abstract: SSC 9500 KSS 8006 AM27C020 electra 171 AMD 27C020 BXA 4250 27C020 "electronica"
Text: FINAL H Advanced Micro Devices Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 32 seconds ■ Latch-up protected to 100 mA from -1 V to
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OCR Scan
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Am27C020
28-pin
32-pin
8M-7/94-0
11507E
amd socket 940 pinout
SSC 9500
KSS 8006
electra 171
AMD 27C020
BXA 4250
27C020
"electronica"
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PDF
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OA79
Abstract: AMD am2 socket pinout amd AM2 pinout amd socket 940 pinout AMD socket AM2 pinout BXA 4250 5607 AM27C040 h4t diode smd pinout AM2 AMD
Text: FINAL il Am27C040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 90 ns — Typical programming time of 1 minute ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to
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OCR Scan
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Am27C040
28-pin
32-pin
Am27C040ign
8M-7/94-0
14971D
0257S2Ã
32S73
OA79
AMD am2 socket pinout
amd AM2 pinout
amd socket 940 pinout
AMD socket AM2 pinout
BXA 4250
5607
h4t diode smd
pinout AM2 AMD
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PDF
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Am2BF010A
Abstract: to525 Transistor 2SC 2166
Text: Zi A m 2 8 F 0 1 0 A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 90 ns m aximum access time ■ CMOS low power consum ption ■
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OCR Scan
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Am28F010A
32-Pin
0D327b5
Am2BF010A
to525
Transistor 2SC 2166
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PDF
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am27c64 rev d
Abstract: No abstract text available
Text: Advanced Micro Devices Am27C64 64 Kilobit 8,192 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc + 1 V ■ Fast access time — 45 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing
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OCR Scan
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Am27C64
28-pin
32-pin
KS000010
05S7SSÃ
11419D-9
am27c64 rev d
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PDF
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Untitled
Abstract: No abstract text available
Text: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance Latch-up protected to 100 mA from -1 V to Vcc +1 V — 70 ns maximum access time Flasherase Electrical Bulk Chip-Erase
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OCR Scan
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Am28F256
32-pin
Am28F256-75
025752fl
DD32b01
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PDF
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programming 29F400
Abstract: COVIC
Text: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ 5.0 V ± 10% read, w rite, and erase — Minimizes system level power requirements
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OCR Scan
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Am29F400T/Am29F400B
8-Bit/262
16-Bit)
29F400T/Am29F400B
0257S2Ã
0D325bb
programming 29F400
COVIC
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AM D£t Am29LV800T/Am29LV800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 3.0 Volt-only, Sectored Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range 2.7 to 3.6 V for read and write operations — Minimizes system level power requirements
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OCR Scan
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Am29LV800T/Am29LV800B
8-Bit/524
16-Bit)
44-pin
48-pin
16-038-S044-2
752ft
003355b
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PDF
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AMD a 462 socket pinout
Abstract: No abstract text available
Text: ADV MICRO MEMORY 38E Q 02s7saa 7 hamdm ggetöoq ¿Ü^PreOmlnarypllfc" r= 4 (,- ß - 2 l Am28F512 Advanced Micro Devices 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time Low power consum ption
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OCR Scan
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02s7saa
Am28F512
32-pin
T-90-10
AMD a 462 socket pinout
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PDF
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Untitled
Abstract: No abstract text available
Text: ADV MICRO {MEMORY} 'it I Am99C164/Am99C165 1 1 6 ,3 8 4 x 4 S ta tic R /W R A M D2S7S2Û OOEbflMM 1 | D ’ DATA SHEET AMENDMENT Increased Standby Current TTL input levels for all speed grades of the Am99C164 and Am99C165, commercial temperature grade. *
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OCR Scan
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Am99C164/Am99C165
Am99C164
Am99C165
Am99CL164
Am99CL165
T-46-23
Am99C16
/Am99CL164
/Am99CL165
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PDF
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PEB 2261
Abstract: 0034D A03407
Text: Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns m axim um acce ss tim e ■ CMOS Low power consumption ■ — 3 0 m A m axim um a ctive current
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OCR Scan
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Am28F020A
32-Pin
-32-pin
PEB 2261
0034D
A03407
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PDF
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Untitled
Abstract: No abstract text available
Text: & Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ — 90 ns maximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase
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OCR Scan
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Am28F010
32-pin
257S2Ã
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PDF
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Untitled
Abstract: No abstract text available
Text: a FINAL Am27C400 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit ROM Compatible CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply ■ ±10% power supply tolerance standard on most speeds — 100 ns
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OCR Scan
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Am27C400
8-Bit/262
16-Bit)
44-pin
42-pin
Am33C93A
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PDF
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