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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e


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    32-Pin Am28F010A PDF

    Untitled

    Abstract: No abstract text available
    Text: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ ■ CMOS Low power consumption Flasherase Electrical Bulk Chip-Erase


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    Am28F256 32-Pin 0257S2Ã PDF

    28F010

    Abstract: AM28F010 AMD 478 socket pinout
    Text: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption


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    G030715 T-46-13-27 Am28F010 -32-Pin 32-Pin 100mA Am28F010-95C4JC Am28F010-95C3JC 28F010 AMD 478 socket pinout PDF

    am29f010

    Abstract: No abstract text available
    Text: a Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power consumption ■ Compatible with JEDEC-standard commands


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    Am29F010 32-pin Am29F040 02S7S2A PDF

    Untitled

    Abstract: No abstract text available
    Text: a Am27X512 512 Kilobit 65,536 x 8-Bit CMOS ExpressROM Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ High noise immunity ■ Low power dissipation — Factory optimized programming — Fully tested and guaranteed


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    Am27X512 Am33C93A PDF

    27X128

    Abstract: No abstract text available
    Text: a Advanced Micro Devices Am27X128 128 Kilobit 16,384 x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • ■ As an O TP EPROM alternative: ■ ±10% pow er supply tolerance — Factory optim ized programming ■ High noise im m unity — Fully tested and guaranteed


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    Am27X128 27X128 KS000010 27X128 PDF

    AM2BF010

    Abstract: 28F010 TRANSISTOR TZ am28f010-150 P5752 11559F-12 11559F-2 am28f010-200
    Text: FINAL a A m 2 8 F 0 1 0 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V — 90 ns maximum access time ■ CMOS Low power consumption


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    Am28F010 32-Pin AM2BF010 28F010 TRANSISTOR TZ am28f010-150 P5752 11559F-12 11559F-2 am28f010-200 PDF

    AM27C128

    Abstract: zi11
    Text: ADV MI C RO MEMORY 4 ÔE D 055752Û 003G327 1 «AMD4 T -4 6 -1 3-29 & Advanced Micro Devices Am27C128 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tlme-55 ns JEDEC-approved pinout ■ Low power consumption: -1 0 0 pA maximum standby current


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    003G327 T-46-13â Am27C128 tlme-55 128K-bit, T-46-13-29 1420-009A zi11 PDF

    29F080

    Abstract: No abstract text available
    Text: P R E L IM IN A R Y Am29F080 8 Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ — Minimizes system level power requirements


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    Am29F080 44-pin 02S752Ã a0337bl 29F080 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO -CMEflORY> flö 0257528 ADV M IC R O DE~| [ ] 2 5 ? S2 0 M E M O R Y 88D 8 -BET 24806 DD^MÖOb S J " D T -¥ £ -f3 -Z 5 (A m 2 7 6 4 A , A m 2 7 1 2 8 A , A m 2 7 2 5 6 ) 03 I CO DISTINCTIVE CHARACTERISTICS • • • Fast a ccess tim es — as low as 200 ns


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    7128A, 06842C PDF

    Am26F010

    Abstract: am26f AM28F010
    Text: a Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • H igh p e rfo rm a n ce ■ — 90 ns maximum access time ■ CMOS Lo w p o w e r c o n s u m p tio n ■ ■ — No data retention power consumption


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    Am28F010 32-Pin 0257S2Ã D033TÃ Am26F010 am26f PDF

    programming AM29F400

    Abstract: TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB
    Text: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ ■ — Minimizes system level power requirements


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    Am29F400T/Am29F400B 8-Bit/262 16-Bit) 44-pin 48-pin D257S2Ã 003S5bb programming AM29F400 TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB PDF

    amd socket 940 pinout

    Abstract: SSC 9500 KSS 8006 AM27C020 electra 171 AMD 27C020 BXA 4250 27C020 "electronica"
    Text: FINAL H Advanced Micro Devices Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 32 seconds ■ Latch-up protected to 100 mA from -1 V to


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    Am27C020 28-pin 32-pin 8M-7/94-0 11507E amd socket 940 pinout SSC 9500 KSS 8006 electra 171 AMD 27C020 BXA 4250 27C020 "electronica" PDF

    OA79

    Abstract: AMD am2 socket pinout amd AM2 pinout amd socket 940 pinout AMD socket AM2 pinout BXA 4250 5607 AM27C040 h4t diode smd pinout AM2 AMD
    Text: FINAL il Am27C040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 90 ns — Typical programming time of 1 minute ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to


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    Am27C040 28-pin 32-pin Am27C040ign 8M-7/94-0 14971D 0257S2Ã 32S73 OA79 AMD am2 socket pinout amd AM2 pinout amd socket 940 pinout AMD socket AM2 pinout BXA 4250 5607 h4t diode smd pinout AM2 AMD PDF

    Am2BF010A

    Abstract: to525 Transistor 2SC 2166
    Text: Zi A m 2 8 F 0 1 0 A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 90 ns m aximum access time ■ CMOS low power consum ption ■


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    Am28F010A 32-Pin 0D327b5 Am2BF010A to525 Transistor 2SC 2166 PDF

    am27c64 rev d

    Abstract: No abstract text available
    Text: Advanced Micro Devices Am27C64 64 Kilobit 8,192 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc + 1 V ■ Fast access time — 45 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing


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    Am27C64 28-pin 32-pin KS000010 05S7SSÃ 11419D-9 am27c64 rev d PDF

    Untitled

    Abstract: No abstract text available
    Text: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance Latch-up protected to 100 mA from -1 V to Vcc +1 V — 70 ns maximum access time Flasherase Electrical Bulk Chip-Erase


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    Am28F256 32-pin Am28F256-75 025752fl DD32b01 PDF

    programming 29F400

    Abstract: COVIC
    Text: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ 5.0 V ± 10% read, w rite, and erase — Minimizes system level power requirements


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    Am29F400T/Am29F400B 8-Bit/262 16-Bit) 29F400T/Am29F400B 0257S2Ã 0D325bb programming 29F400 COVIC PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AM D£t Am29LV800T/Am29LV800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 3.0 Volt-only, Sectored Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range 2.7 to 3.6 V for read and write operations — Minimizes system level power requirements


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    Am29LV800T/Am29LV800B 8-Bit/524 16-Bit) 44-pin 48-pin 16-038-S044-2 752ft 003355b PDF

    AMD a 462 socket pinout

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 38E Q 02s7saa 7 hamdm ggetöoq ¿Ü^PreOmlnarypllfc" r= 4 (,- ß - 2 l Am28F512 Advanced Micro Devices 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time Low power consum ption


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    02s7saa Am28F512 32-pin T-90-10 AMD a 462 socket pinout PDF

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO {MEMORY} 'it I Am99C164/Am99C165 1 1 6 ,3 8 4 x 4 S ta tic R /W R A M D2S7S2Û OOEbflMM 1 | D ’ DATA SHEET AMENDMENT Increased Standby Current TTL input levels for all speed grades of the Am99C164 and Am99C165, commercial temperature grade. *


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    Am99C164/Am99C165 Am99C164 Am99C165 Am99CL164 Am99CL165 T-46-23 Am99C16 /Am99CL164 /Am99CL165 PDF

    PEB 2261

    Abstract: 0034D A03407
    Text: Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns m axim um acce ss tim e ■ CMOS Low power consumption ■ — 3 0 m A m axim um a ctive current


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    Am28F020A 32-Pin -32-pin PEB 2261 0034D A03407 PDF

    Untitled

    Abstract: No abstract text available
    Text: & Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ — 90 ns maximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase


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    Am28F010 32-pin 257S2Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: a FINAL Am27C400 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit ROM Compatible CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply ■ ±10% power supply tolerance standard on most speeds — 100 ns


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    Am27C400 8-Bit/262 16-Bit) 44-pin 42-pin Am33C93A PDF