Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD218409 SHD218409A SHD218409B TECHNICAL DATA DATA SHEET 349, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.2 Ohm, -18A MOSFET Electrically Isolated Hermetically Sealed Low RDS on Equivalent to IRF9140 Series
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SHD218409
SHD218409A
SHD218409B
IRF9140
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Untitled
Abstract: No abstract text available
Text: APT22F100J 1000V, 23A, 0.38Ω Max, trr ≤300ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT22F100J
300ns
OT-227
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Untitled
Abstract: No abstract text available
Text: APT34F100B2 APT34F100L 1000V, 35A, .38Ω Max trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT34F100B2
APT34F100L
300ns
O-264
APT34F100B2
O-247
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Untitled
Abstract: No abstract text available
Text: APT22F100J 1000V, 23A, 0.38Ω Max, trr ≤300ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT22F100J
300ns
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PDF
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Untitled
Abstract: No abstract text available
Text: APT34F100B2 APT34F100L 1000V, 35A, .38Ω Max trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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Original
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APT34F100B2
APT34F100L
300ns
O-264
O-247
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Untitled
Abstract: No abstract text available
Text: APT22F100J 1000V, 22A, 0.40Ω Max, trr ≤300ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT22F100J
300ns
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APT22F100J
Abstract: MIC4452
Text: APT22F100J 1000V, 23A, 0.38Ω Max, trr ≤300ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT22F100J
300ns
APT22F100J
MIC4452
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APT22F100J
Abstract: MIC4452 32007
Text: APT22F100J 1000V, 22A, 0.40Ω Max, trr ≤300ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT22F100J
300ns
APT22F100J
MIC4452
32007
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Untitled
Abstract: No abstract text available
Text: APT34F100B2 APT34F100L 1000V, 34A, 0.40Ω Max, trr ≤300ns N-Channel FREDFET T-Max Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT34F100B2
APT34F100L
300ns
O-264
APT34
O-247
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IRF9140
Abstract: SHD218409 SHD218409A SHD218409B
Text: SENSITRON SEMICONDUCTOR SHD218409 SHD218409A SHD218409B TECHNICAL DATA DATA SHEET 349, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: • -100 Volt, 0.2 Ohm, -18A MOSFET • Electrically Isolated Hermetically Sealed • Low RDS on • Equivalent to IRF9140 Series
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SHD218409
SHD218409A
SHD218409B
IRF9140
SHD218409
SHD218409A
SHD218409B
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APT34F100L
Abstract: APT34F100B2 MIC4452
Text: APT34F100B2 APT34F100L 1000V, 35A, .38Ω Max trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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Original
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APT34F100B2
APT34F100L
300ns
O-264
APT34F1
O-247
APT34F100L
APT34F100B2
MIC4452
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PDF
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APT34F100B2
Abstract: APT34F100L MIC4452
Text: APT34F100B2 APT34F100L 1000V, 34A, 0.40Ω Max, trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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Original
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APT34F100B2
APT34F100L
300ns
O-247
APT34F100B2
APT34F100L
MIC4452
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PDF
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SHD218409A
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD218409 SHD218409A SHD218409B TECHNICAL DATA DATA SHEET 349, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.2 Ohm, -18A MOSFET Electrically Isolated Hermetically Sealed Low RDS on Equivalent to IRF9140 Series
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SHD218409
SHD218409A
SHD218409B
IRF9140
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419F
Abstract: APT12067JFLL APT60D120B TR4010 MAX4420
Text: APT12067JFLL 1200V 17A 0.670Ω POWER MOS 7 R Symbol VDSS ID SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel
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APT12067JFLL
OT-227
419F
APT12067JFLL
APT60D120B
TR4010
MAX4420
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APT26M100JCU2
Abstract: sic-diode 1000v APT0502 diode schottky 1000V 10a
Text: APT26M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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APT26M100JCU2
OT-227)
APT26M100JCU2
sic-diode 1000v
APT0502
diode schottky 1000V 10a
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diode schottky 1000V 10a
Abstract: SiC MOS APT0502
Text: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode
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APT26M100JCU3
OT-227)
diode schottky 1000V 10a
SiC MOS
APT0502
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Untitled
Abstract: No abstract text available
Text: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode
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APT26M100JCU3
OT-227)
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PDF
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Untitled
Abstract: No abstract text available
Text: APT12067JFLL 1200V 17A 0.670Ω POWER MOS 7 R Symbol VDSS SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel
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APT12067JFLL
OT-227
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PDF
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IRF 1640 G
Abstract: irf 1640 mosfet
Text: IRFR3410 IRFU3410 D-Pak IRFR3410 Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001 l Fully Characterized Avalanche Voltage
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IRFR3410
IRFU3410
AN1001)
EIA-481
EIA-541.
EIA-481.
IRF 1640 G
irf 1640 mosfet
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Untitled
Abstract: No abstract text available
Text: PD - 94523 IRFR3518 IRFU3518 Applications l High frequency DC-DC converters HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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IRFR3518
IRFU3518
AN1001)
AN-994.
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irfr3518
Abstract: AN1001 EIA-541 IRFU3518
Text: PD - 94523 IRFR3518 IRFU3518 Applications l High frequency DC-DC converters HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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IRFR3518
IRFU3518
AN1001)
AN-994.
irfr3518
AN1001
EIA-541
IRFU3518
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFR3518 IRFU3518 D-Pak IRFR3518 Applications l High frequency DC-DC converters I-Pak IRFU3518 Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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IRFR3518
IRFU3518
AN1001)
EIA-481
EIA-541.
EIA-481.
AN-994.
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PDF
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AN1001
Abstract: EIA-541 IRFR120 IRFR3418 IRFU3418 U120 b965
Text: PD - 94452 IRFR3418 IRFU3418 HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS RDS on Max 14m: 80V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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IRFR3418
IRFU3418
AN1001)
AN-994.
AN1001
EIA-541
IRFR120
IRFR3418
IRFU3418
U120
b965
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PDF
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irgph50ud
Abstract: IRGPH50u C732 TRANSISTOR transistor C732
Text: International îor Rectifier PD - 9.802A IRGPC50UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
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OCR Scan
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IRGPC50UD2
DD2D521
O-247AC
C-732
GG20522
irgph50ud
IRGPH50u
C732 TRANSISTOR
transistor C732
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