Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    034 DIODE Search Results

    034 DIODE Result Highlights (5)

    Part
    ECAD Model
    Manufacturer
    Description
    Download
    Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    034 DIODE Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    DL-3038-034

    Abstract: No abstract text available
    Text: Ordering number : ENN6873A Red Laser Diode DL-3038-034 DL-3038-034 Red Laser Diode Features Package Dimensions • Short wavelength • Low threshold current • High operating temperature • Low operating voltage Tolerance : ± 0.2 Unit : mm : 635 nm (Typ.)


    Original
    ENN6873A DL-3038-034 DL-3038-034 PDF

    SFR60

    Abstract: No abstract text available
    Text: HIGH SPEED, HIGH EFFICIENCY DISCRETE AXIAL LEAD DIODES FIGURE 96 DO-41 .034 .9 Max. FIGURE 97 98 .205 (5.2) Max. .107 (2.7) Max. FIGURE 99 .360 (9.1) Max. .360 (9.1) Max. Repetitive Peak Reverse Voltage VRRM V(Volts) DO-15 .034 (.9) Max. 1.0 (25.4) Min.


    Original
    DO-41 DO-15 DO-201AD SF16L UF4007 UF5408 HER158 HER208 HER308 HER508 SFR60 PDF

    1W ZENER DIODE

    Abstract: Zener Diodes 300v 12V, 1W zener diode 1W 12V ZENER DIODE zener diode 9,1v 0.5 w zener diode chip zener diode 1n4750a
    Text: 1N47xxA SERIES 1W Zener Diode .034 034 0 (0.9 9) DIA. .028 (0.7) 1.0 (25.4) MIN. .205 (5.2) .165 (4.2) .107 (2.7) DIA. .080 (2.0) PRIMARY CHARACTERISTICS 1.0 (25.4) MIN. VRRM 6.2~300V VF 1.2V TJ max 150°C DO-41 Dimensions in inches and (millimeters) Mechaincal Data


    Original
    1N47xxA DO-41 DO-41 UL94V-0 MIL-STD-202, 1V-91V 1W ZENER DIODE Zener Diodes 300v 12V, 1W zener diode 1W 12V ZENER DIODE zener diode 9,1v 0.5 w zener diode chip zener diode 1n4750a PDF

    DL-3148-034

    Abstract: No abstract text available
    Text: Ordering number : ENN6880A Red Laser Diode DL-3148-034 DL-3148-034 Red Laser Diode Features Package Dimensions : 635 nm Typ. : Ith = 40 mA (Typ.) : 5 mW at 50°C : ø 5.6 mm ø4.4 ø3.55±0.1 ø1.6 Effective window diameter 1.0min. 1 3 Applications Absolute Maximum Ratings at Tc=25°C


    Original
    ENN6880A DL-3148-034 DL-3148-034 PDF

    Q65110A8946

    Abstract: No abstract text available
    Text: Platinum DRAGON Lead Pb Free Product - RoHS Compliant LW W5SN Vorläufige Daten für OS-PCN-2009-034-A / Preliminary Data for OS-PCN-2009-034-A Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klarer Silikon - Verguss, Chip level conversion • Typischer Lichtfluss: 146 lm bei 700 mA und bis


    Original
    OS-PCN-2009-034-A OS-PCN-2009-034-A Q65110A8946 PDF

    YL 69 moisture

    Abstract: 57M-SS ITW Pancon 57-112R 76-95 round bezel ITW Switches ITW Pancon CE100F AMP PBTP pushbutton square dpdt 8mm
    Text: TABLE OF CONTENTS SEALED IP67 PUSHBUTTON SWITCHES Table Of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ii – iii Series 034: Sub-Miniature T-05 Space Saver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 – 3


    Original
    PDF

    z150 zener diode

    Abstract: z150 Diode Z310 Z170 z320 Z110 zener diode z270 Z120 Z130 Z150
    Text: Z110 THRU Z330 Formosa MS 1WATT ZENER DIODE FEATURES ! PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 ! LOW ZENER IMPEDANCE ! EXCELLENT CLAMPING CAPABILITY 1.0 25.4 MIN .034(0.9) .028(0.7) .205(5.2) .166(4.2) MECHANICAL DATA


    Original
    MIL-STD-202, CASE-DO41 25UNLES50 300us z150 zener diode z150 Diode Z310 Z170 z320 Z110 zener diode z270 Z120 Z130 Z150 PDF

    zener diode z10

    Abstract: z10-130 Z10-200 Z10-150 z1031 zener z10 Z10-160 Z10-110 Z10-120 Z10-140
    Text: Z10-110 THRU Z10-330 FRONTIER ELECTRONICS CO., LTD. 1WATT ZENER DIODE FEATURES ! PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 ! LOW ZENER IMPEDANCE ! EXCELLENT CLAMPING CAPABILITY 1.0 25.4 MIN .034(0.9) .028(0.7) .205(5.2)


    Original
    Z10-110 Z10-330 MIL-STD-202, CASE-DO41 300us zener diode z10 z10-130 Z10-200 Z10-150 z1031 zener z10 Z10-160 Z10-110 Z10-120 Z10-140 PDF

    AN034

    Abstract: BA592 INFINEON application note BA595 BAR63 BAR64 RF Semiconductors infineon RF
    Text: Application Note No. 034 Discrete & RF Semiconductors Carrier Lifetime and Forward Resistance in RF PIN-Diodes This abstract summarises the fundamentals of RF PIN Diode physics. General design considerations of PIN Diodes are discussed and a measuring method


    Original
    PDF

    5 watt zener diode

    Abstract: 5 volts ZENER DIODE 2 Watt Zener Diode CASE-DO201AE 1N5342B ZENER DIODE 5 watt 1N5344B 1N5345B 1N5346B 1N5347B
    Text: 1N5342B THRU 1N5388B FRONTIER ELECTRONICS CO., LTD. 5 WATT SILICON ZENER DIODE FEATURES z PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 z LOW ZENER IMPEDANCE z EXCELLENT CLAMPING CAPABILITY 1.0 25.4 MIN .034(0.9) .028(0.7)


    Original
    1N5342B 1N5388B MIL-STD-202 CASE-DO201AE 5 watt zener diode 5 volts ZENER DIODE 2 Watt Zener Diode CASE-DO201AE 1N5342B ZENER DIODE 5 watt 1N5344B 1N5345B 1N5346B 1N5347B PDF

    ZY5.6

    Abstract: transistor zy zy zener ZY3,9 ZY10 ZY11 ZY12 ZY13 ZY15 ZY16
    Text: ZY Series SILICON ZENER DIODES .107 2.7 .080(2.0) 1.0(25.4) MIN. .205(5.2) .166(4.1) 1.0(25.4) MIN. .034(.9) .028(.7) Dimensions in inches and (millimeters) DO-41 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Power Dissipation Ptot


    Original
    DO-41 ZY5.6 transistor zy zy zener ZY3,9 ZY10 ZY11 ZY12 ZY13 ZY15 ZY16 PDF

    DO15

    Abstract: 3EZ11 3EZ12 3EZ13 3EZ14 3EZ15 3EZ16 3EZ200 DO-15
    Text: DATA SHEET 3EZ11~3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE- 11 to 200 Volts Power - 3.0 Watts DO-15 Unit: inch mm FEATURES .034(.86) .028(.71) • Built-in strain relief • Glass passivated iunction • Low inductance 1.0(25.4) MIN.


    Original
    3EZ11 3EZ200 DO-15 DO-15, MIL-STD-750, 3EZ140 3EZ150 DO15 3EZ12 3EZ13 3EZ14 3EZ15 3EZ16 3EZ200 DO-15 PDF

    202E

    Abstract: BZX55C2V4 BZX55C2V7 BZX55C3V0 BZX55C3V3 BZX55C3V6 BZX55C3V9 BZX55C75
    Text: CHONGQING PINGYANG ELECTRONICS CO.,LTD. BZX55C2V4 THRU BZX55C75 SILICON PLANAR ZENER DIODES FEATURES DO-41 •Voltage Range: 2.7V to 75V ·Double siug type construction 1.0 25.4 MIN. .034(0.9) .028(0.7) DIA. .107(2.7) .080(2.0) DIA. .205(5.2) .166(4.2) MECHANICAL DATA


    Original
    BZX55C2V4 BZX55C75 DO-41 UL94V-0 202E BZX55C2V7 BZX55C3V0 BZX55C3V3 BZX55C3V6 BZX55C3V9 BZX55C75 PDF

    1N5221B

    Abstract: 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5272B 202E
    Text: CHONGQING PINGYANG ELECTRONICS CO.,LTD. 1N5221B THRU 1N5272B SILICON PLANAR ZENER DIODES FEATURES DO-41 •Voltage Range: 2.7V to 110V ·Double siug type construction 1.0 25.4 MIN. .034(0.9) .028(0.7) DIA. .107(2.7) .080(2.0) DIA. .205(5.2) .166(4.2) MECHANICAL DATA


    Original
    1N5221B 1N5272B DO-41 UL94V-0 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5272B 202E PDF

    Untitled

    Abstract: No abstract text available
    Text: 2EZ6.8~2EZ51 SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 2.0 Watts DO-15 Unit: inch mm FEATURES • Low profile package 1.0(25.4)MIN. .034(.86) • Built-in strain relief • Low inductance • Plastic package has Underwriters Laboratory Flammability


    Original
    2EZ51 DO-15 2002/95/EC DO-15, MIL-STD-750, RB500V-40 PDF

    BZX2C16V

    Abstract: 202E BZX2C10V BZX2C11V BZX2C12V BZX2C13V BZX2C15V BZX2C18V
    Text: CHONGQING PINGYANG ELECTRONICS CO.,LTD. BZX2C3V6 THRU BZX2C220V SILICON PLANAR ZENER DIODES FEATURES DO-41 •Voltage Range: 3.6V to 220V ·Double siug type construction 1.0 25.4 MIN. .034(0.9) .028(0.7) DIA. .107(2.7) .080(2.0) DIA. .205(5.2) .166(4.2) MECHANICAL DATA


    Original
    BZX2C220V DO-41 UL94V-0 capaciti14. BZX2C130V BZX2C150V BZX2C160V BZX2C180V BZX2C200V BZX2C16V 202E BZX2C10V BZX2C11V BZX2C12V BZX2C13V BZX2C15V BZX2C18V PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5921B~1N5942B SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 1.5 Watts DO-41 Unit: inch mm FEATURES • Low profile package .034(.86) 1.0(25.4)MIN. • Built-in strain relief • Low inductance • Plastic package has Underwriters Laboratory Flammability


    Original
    1N5921B 1N5942B DO-41 2002/95/EC DO-41 MIL-STD-750, PDF

    1N4728A

    Abstract: 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A 1N4764A
    Text: 1N4728A thru 1N4764A ZENER DIODE REVERSE VOLTAGE - 3.3 to 100 Volts DO- 41 FEATURES ● High reliability ● Very sharp reverse characteristic ● Low reverse current level ●Vz-tolerance±5% 1.0 25.4 MIN. .034(0.9) DIA .028(0.7) .205(5.2) MAX APPLICATIONS


    Original
    1N4728A 1N4764A Tamb50 1N4759A 1N4760A 1N4761A 1N4762A 1N4763A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A 1N4764A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2EZ6.8~2EZ51 SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 2.0 Watts DO-15 Unit: inch mm FEATURES • Low profile package 1.0(25.4)MIN. .034(.86) • Built-in strain relief • Low inductance • Plastic package has Underwriters Laboratory Flammability


    Original
    2EZ51 DO-15 2002/95/EC DO-15, MIL-STD-750, RB500V-40 PDF

    in 965 zener diode

    Abstract: 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A 1N4764A
    Text: 1N4728A thru 1N4764A ZENER DIODE REVERSE VOLTAGE - 3.3 to 100 Volts DO- 41 FEATURES ● High reliability ● Very sharp reverse characteristic ● Low reverse current level ●Vz-tolerance±5% 1.0 25.4 MIN. .034(0.9) DIA .028(0.7) .205(5.2) MAX APPLICATIONS


    Original
    1N4728A 1N4764A Tamb50 1N4759A 1N4760A 1N4761A 1N4762A 1N4763A in 965 zener diode 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A 1N4764A PDF

    3EZ10

    Abstract: 3EZ11 3EZ12 3EZ13 3EZ14 3EZ51
    Text: 3EZ6.8~3EZ51 SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 3.0 Watts DO-15 Unit: inch mm FEATURES • Low profile package 1.0(25.4)MIN. .034(.86) • Built-in strain relief • Low inductance • Plastic package has Underwriters Laboratory Flammability


    Original
    3EZ51 DO-15 2002/95/EC DO-15, MIL-STD-750, 3EZ10 3EZ11 3EZ12 3EZ13 3EZ14 3EZ51 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5921B~1N5942B SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 1.5 Watts DO-41 Unit: inch mm FEATURES • Low profile package .034(.86) 1.0(25.4)MIN. • Built-in strain relief • Low inductance • Plastic package has Underwriters Laboratory Flammability


    Original
    1N5921B 1N5942B DO-41 2002/95/EC DO-41 MIL-STD-750, PDF

    bzv 46

    Abstract: bzv 400 5v6 k3 bzv 4v3 bzv 4v7 bzv 41 BZV 400 ZENER DIODES BZV 85 85C4V7 6V2 Zener Diode C 6V2 diode
    Text: CHONGQING PINGYANG ELECTRONICS CO.,LTD. BZV85C2V7 THRU BZV85C220 SILICON PLANAR ZENER DIODES FEATURES DO-41 •Voltage Range: 2.7V to 220V ·Double siug type construction 1.0 25.4 MIN. .034(0.9) .028(0.7) DIA. .107(2.7) .080(2.0) DIA. .205(5.2) .166(4.2) MECHANICAL DATA


    Original
    BZV85C2V7 BZV85C220 DO-41 UL94V-0 bzv 46 bzv 400 5v6 k3 bzv 4v3 bzv 4v7 bzv 41 BZV 400 ZENER DIODES BZV 85 85C4V7 6V2 Zener Diode C 6V2 diode PDF

    2EZ12

    Abstract: 2EZ11 2EZ51
    Text: 2EZ6.8~2EZ51 SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 2.0 Watts DO-15 Unit: inch mm FEATURES • Low profile package 1.0(25.4)MIN. .034(.86) • Built-in strain relief • Low inductance • Plastic package has Underwriters Laboratory Flammability


    Original
    2EZ51 DO-15 2002/95/EC DO-15, MIL-STD-750, 2EZ12 2EZ11 2EZ51 PDF