Untitled
Abstract: No abstract text available
Text: 4 LOC 0.7 REF PICK UP AREA AS SHOWN: -1 2.4 - P A B &-3 B1 0.93 01JUL2010 Y.K Y.N REVISED PER ECR-12-020867 24JAN2013 F.L S.Y REVISED PER ECR-13-008919 03JUN2013 R.W S.Y 0.4 REF (CONTACT PLATING AREA) STROKE CONDITION SCALE 30:1 0.5 1 1.3 (SOLDER AREA) 0.05
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24JAN2013
03JUN2013
22APR2010
160REF
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PDF
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Untitled
Abstract: No abstract text available
Text: PM2131 4 A switching mode battery charger with power path Datasheet - production data • Boost mode – For USB On-The-Go supply to provide 5 V and 1 A on VBUS when A device – Programmable boost voltage: 4.5 V, 5.0 V, 7.0 V and 11.0 V with 5 W max. – No external component needed
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PM2131
DocID024606
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PDF
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Untitled
Abstract: No abstract text available
Text: SBL10U100 Voltage 100V 10.0 Amp Low VF Trench MOS Barrier Schottky Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-220 FEATURES B Trench MOS Schottky technology Low forward voltage drop Low reverse current
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SBL10U100
O-220
UL94V-0
MIL-STD-202
03-Jun-2013
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PDF
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Untitled
Abstract: No abstract text available
Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications
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STRH8N10
STRH8N10S1
DocID018504
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PDF
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2N2907AUB
Abstract: No abstract text available
Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
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2N2907AHR
2N2907AHR
MIL-PRF19500
DocID15382
2N2907AUB
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PDF
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Untitled
Abstract: No abstract text available
Text: STF9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet - production data Features 1 2 Order code VDS @ TJmax RDS on max ID STF9N60M2 650 V 0.78 Ω 5.5 A • Extremely low gate charge 3 • Lower RDS(on) x area vs previous generation
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STF9N60M2
O-220FP
O-220FP
DocID024728
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PDF
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Untitled
Abstract: No abstract text available
Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - preliminary data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications
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Original
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STRH8N10
STRH8N10S1
DocID018504
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PDF
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Untitled
Abstract: No abstract text available
Text: STF9N60M2, STFI9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features Order codes STF9N60M2 STFI9N60M2 1 2 RDS on max ID 650 V 0.78 Ω 5.5 A • Extremely low gate charge
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STF9N60M2,
STFI9N60M2
O-220FP
STF9N60M2
O-220FP
O-281)
DocID024728
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PDF
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Untitled
Abstract: No abstract text available
Text: WSD751BS Surface Mount Schottky Barrier Diodes P b Lead Pb -Free Feature: * Silicon Epitaxial Planar * Extremelysmall Surface Mounting Type. (SOD-882) * Low VF * High Reliability * We Declare That The Material of Product Compliance With RoHS Requirements SMALL SIGNAL
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WSD751BS
OD-882)
OD-882
OD-882
03-Jun-2013
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PDF
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Untitled
Abstract: No abstract text available
Text: M95512-W M95512-R M95512-DR M95512-DF 512-Kbit serial SPI bus EEPROM Datasheet - production data Features • Compatible with the Serial Peripheral Interface SPI bus SO8 (MN) 150 mil width • Memory array – 512 Kb (64 Kbytes) of EEPROM – Page size: 128 bytes
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M95512-W
M95512-R
M95512-DR
M95512-DF
512-Kbit
M95512-W
M95512-R
M95512DR
DocID11124
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PDF
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Untitled
Abstract: No abstract text available
Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - preliminary data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications
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Original
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STRH8N10
STRH8N10S1
STRH8N10SG
DocID018504
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PDF
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soc2907
Abstract: 2N2907AUB
Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
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Original
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2N2907AHR
2N2907AHR
MIL-PRF19500
DocID15382
soc2907
2N2907AUB
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PDF
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Untitled
Abstract: No abstract text available
Text: STM8AL31xx, STM8AL3Lxx Automotive 8-bit ultra-low-power MCU, up to 32 Kbytes Flash, RTC, data EEPROM, LCD, timers, USART, I2C, SPI, ADC, DAC, COMPs Datasheet - production data Features • Operating conditions – Operating power supply range 1.8 V to 3.6 V down to 1.65 V at power down
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STM8AL31xx,
DocID18474
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PDF
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Untitled
Abstract: No abstract text available
Text: M95512-W M95512-R M95512-DF 512-Kbit serial SPI bus EEPROM Datasheet - production data Features • Compatible with the Serial Peripheral Interface SPI bus SO8 (MN) 150 mil width • Memory array – 512 Kb (64 Kbytes) of EEPROM – Page size: 128 bytes
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Original
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M95512-W
M95512-R
M95512-DF
512-Kbit
M95512-W
DocID11124
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
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Original
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2N2907AHR
2N2907AHR
MIL-PRF19500
DocID15382
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PDF
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Untitled
Abstract: No abstract text available
Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications
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Original
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STRH8N10
STRH8N10S1
DocID018504
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC ES ALL RIGHTS RESERVED. 1 REVISIONS DIST 00 P LTR DIM D DESCRIPTION DATE DWN APVD G2 ADDED THE DASH NO -27 11MAY2011 ML SZ G3 REV PER ECR-13-006828 25APR2013 CZ
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11MAY2011
ECR-13-006828
25APR2013
03JUN2013
16FEB05
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PDF
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520200107R
Abstract: 2N2907A1 2N2907AUB
Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
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Original
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2N2907AHR
2N2907AHR
MIL-PRF19500
DocID15382
520200107R
2N2907A1
2N2907AUB
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PDF
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Untitled
Abstract: No abstract text available
Text: STM8AL31xx STM8AL3Lxx Automotive 8-bit ultralow power MCU, up to 32 Kbytes Flash, RTC, data EEPROM, LCD, timers, USART, I2C, SPI, ADC, DAC, COMPs Datasheet - preliminary data Features • Operating conditions – Operating power supply range 1.8 V to 3.6 V down to 1.65 V at power down
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Original
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STM8AL31xx
DocID18474
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PDF
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Untitled
Abstract: No abstract text available
Text: SBL10U100F Voltage 100V 10.0 Amp Low VF Trench MOS Barrier Schottky Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 FEATURES B Trench MOS Schottky technology Low forward voltage drop Low reverse current
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Original
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SBL10U100F
ITO-220
UL94V-0
MIL-STD-202
03-Jun-2013
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION LOC 3.15 1 REVISIONS DIST J ALL RIGHTS RESERVED. BY - 20 2 3 - P 1.95 D 0.3 D1 D2 0.05 AS SHOWN: -1 DESCRIPTION LTR DATE DWN APVD REVISED 25APR2012 T.Z S.Y REVISED FOR ADD *-3, ADD NOTE 7
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25APR2012
03JUN2013
28REF
21REF
160mm
06NOV2009
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PDF
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