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    PHD22NQ20T

    Abstract: 12882
    Text: PHD22NQ20T N-channel TrenchMOS standard level FET Rev. 01 — 08 March 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features


    Original     		PHD22NQ20T M3D300 OT428 PHD22NQ20T 12882 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 8_ THIS DRAWING AND DESIGN HEREON CON­ S T IT U T E S A PROPRIETARY DESIGN OF PACKARD EL E C T R IC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD E L E C T R IC DIVISION. DATE DO NOT SCA LE PREFERRED. 4 5 ° ACCEPTABLE


    OCR Scan     		14AP87 27MY87 03AP91 12JL91 31JL91 25SE91 18MY94 26JL94 06MR95 PDF