88142
Abstract: No abstract text available
Text: BAT54 thru BAT54S Vishay Semiconductor Schottky Diodes Features TO-236AB SOT-23 • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
|
Original
|
BAT54
BAT54S
O-236AB
OT-23)
OT-23
E8/10K
30K/box
30K/box
03-Jan-02
88142
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BAT54WS Vishay Semiconductor New Product Schottky Diode Mounting Pad Layout SOD-323 0.055 1.40 0.062 (1.60) 0.047 (1.20) .012 (0.3) .065 (1.65) .076 (1.95) .100 (2.55) .112 (2.85) Cathode Band Top View Features .006 (0.15) max. .043 (1.1) .004 (0.1) max.
|
Original
|
BAT54WS
OD-323
OD-323
D5/10K
03-Jan-02
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 1 20 REVISIONS ALL RIGHTS RESERVED. - 20 2 3 P LTR DESCRIPTION F D 776437-2 SCALE 776437-3 2:1 SCALE 776437-4 2:1 SCALE DATE REVISED PER ECO-13-019231 DWN DR 09DEC2013 1 MATERIAL: 15% GLASS FILLED THERMOPLASTIC
|
Original
|
ECO-13-019231
09DEC2013
03JAN02
07JUN00
|
PDF
|
surge diode marking code d6
Abstract: BAT54WS
Text: BAT54WS Vishay Semiconductor New Product Schottky Diode Mounting Pad Layout SOD-323 0.055 1.40 0.062 (1.60) 0.047 (1.20) .012 (0.3) .065 (1.65) .076 (1.95) .100 (2.55) .112 (2.85) Cathode Band Top View Features .006 (0.15) max. .043 (1.1) .004 (0.1) max.
|
Original
|
BAT54WS
OD-323
OD-323
D5/10K
03-Jan-02
surge diode marking code d6
BAT54WS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 - REVISIONS ALL RIGHTS RESERVED. BY - P LTR DESCRIPTION C2 D DATE DWN APVD REVISED PER ECO-11-005030 12MAR2011 RK HMR REVISED PER ECO-13-019168 05DEC2013 DR RB D D 776434-2 SCALE
|
Original
|
ECO-11-005030
ECO-13-019168
12MAR2011
05DEC2013
13JUN00
03JAN02
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IMC-0805-01 Vishay Dale Inductors High Frequency, Surface Mount FEATURES • High self-resonant frequency values. • High Q values at higher frequencies. • Wirewound construction. • Tape and reel packaging for automatic handling, 2000/reel. • Compatible with vapor phase and infrared reflow soldering.
|
Original
|
IMC-0805-01
2000/reel.
000nH.
390nH
470nH
HP4286A
390nH)
HP4285A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ZM4728 thru ZM4764 Vishay Semiconductor Zener Diodes VZ Range 3.3 to 100V Power Dissipation 1W Glass MELF Mounting Pad Layout 0.157 4.00 MAX Cathode Mark 0.102 (2.6) 0.094 (2.4) 0.049 (1.25) MIN 0.118 (3.00) MIN 0.022 (0.55) 0.205 (5.2) 0.189 (4.8) 0.256 (6.50)
|
Original
|
ZM4728
ZM4764
10K/box
12K/box
03-Jan-02
ZM4728.
|
PDF
|
1000 megahertz crystal oscillator
Abstract: MC12181 MC12181D
Text: MC12181 125-1000 MHz Frequency Synthesizer The MC12181 is a monolithic bipolar synthesizer integrating a high performance prescaler, programmable divider, phase/frequency detector, charge pump, and reference oscillator/buffer functions. The device is capable of synthesizing a signal which is 25 to 40 times the input reference
|
Original
|
MC12181
MC12181
MC12181/D
03JAN02
751B-05
04JUL02
1000 megahertz crystal oscillator
MC12181D
|
PDF
|
1N4728
Abstract: 1N4764 ZM4728 ZM4729 ZM4730 ZM4731 ZM4732 ZM4733 ZM4764
Text: ZM4728 thru ZM4764 Vishay Semiconductor Zener Diodes VZ Range 3.3 to 100V Power Dissipation 1W Glass MELF Mounting Pad Layout 0.157 4.00 MAX Cathode Mark 0.102 (2.6) 0.094 (2.4) 0.049 (1.25) MIN 0.118 (3.00) MIN 0.022 (0.55) 0.205 (5.2) 0.189 (4.8) 0.256 (6.50)
|
Original
|
ZM4728
ZM4764
10K/box
12K/box
03-Jan-02
ZM4728.
1N4728
1N4764
ZM4729
ZM4730
ZM4731
ZM4732
ZM4733
ZM4764
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P LTR E1 F DESCRIPTION DATE DWN APVD REVISED PER EC0-11-005030 26APR2011 RK HMR REVISED PER ECO-13-019168 05DEC2013 DR RB D D 776433-2 SCALE: 2:1
|
Original
|
EC0-11-005030
ECO-13-019168
26APR2011
05DEC2013
03JAN02
13JUN00
|
PDF
|
BAT54 E9
Abstract: marking l4 sot-23 BAT54 BAT54A BAT54C BAT54S
Text: BAT54 thru BAT54S Vishay Semiconductor Schottky Diodes TO-236AB SOT-23 Features .122 (3.1) .110 (2.8) • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as
|
Original
|
BAT54
BAT54S
O-236AB
OT-23)
OT-23
E8/10K
30K/box
03-Jan-02
BAT54 E9
marking l4 sot-23
BAT54A
BAT54C
BAT54S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 - REVISIONS ALL RIGHTS RESERVED. BY - P LTR DESCRIPTION C1 D DATE DWN APVD REVISED PER ECO-11-005294 20APR2011 RK HMR REVISED PER ECO-13-019231 09DEC2013 DR RB D D 776438-2 SCALE
|
Original
|
ECO-11-005294
ECO-13-019231
20APR2011
09DEC2013
06DEC99
03JAN02
|
PDF
|
V2000
Abstract: No abstract text available
Text: 4 THIS DRAWING 7 IS C O P Y R IG H T 3 U N P U B L IS H E D . 19 FOR RELEASED BY AMP PUBLICATION ALL IN COR POR ATE D. R IG H T S 2 ,19 LOC R ES ER V ED . AF 4 . 67[ . 1 84] 7 . 37 . 684] 50 DESCRIPTION L TR CIRCUIT U L _L PER 0G3A-0682-01 DATE DWN APVD
|
OCR Scan
|
0G3A-0682-01
03JAN02
1ONOV2000
V2000
V2000
23FEB95
16-0CT-01
amp02644
/home/amp02644/dmtec
|
PDF
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBU CATION LOC R E V IS IO N S AJ ALL RIGHTS RESERVED. COPYRIGHT DIST BY TYCO ELECTRONICS CORPORATION. p LTR c DESCRIPTION REV PER DATE 0S14 -0 4 6 9 -0 3 OWN APVD KW KW 2 0 NOVO3 D D C [.05] 1408313 1.1 B B DEBURR OR CHAMFER EDGE
|
OCR Scan
|
03JAN02
31MAR2000
|
PDF
|
|
|
A109
Abstract: No abstract text available
Text: IN THIRD ANGL E PROJECTION RELEASED C COPYRIGHT R E S E R V E D. AMP 1972 PRODUCTS AMP BY MAY BE FOR P U B L I C A T I O N I N G O R P O R A T E D , HARR I S B O R G , P A . COVERED BY U.S. AND BORE I GN DECEMBER ALL 29, INTERNATIONAL PATENTS AND/OR 1983
|
OCR Scan
|
ECN-0156
ECN-0663
ECN-0834
ECN-0816
3-1S-85
BD3132
OU1D-0275-00
03JAN02
A109
|
PDF
|
ic 747
Abstract: wy 747
Text: DRAWING MADE IN THIRD ANGLE RELEASED C C O P Y R I G H T RESERVED. 19 8 3 AMP PRODUCTS BY MAY AMP BE FOR BY U„5„ MAY 6 , PUBLICATION INCORPORATED, HARRISBURG, PA. COVERED 6 7 PROJECTION AND FOREIGN ALL INTERNATIONAL PATENT5 ANDYOR 5 1983 RIGHTS PATENT5
|
OCR Scan
|
UBL15HED.
A55INI
ic 747
wy 747
|
PDF
|
A109
Abstract: P005
Text: 4 DRAWI NG MADE THIS IN THIRD DRAWI NG ANGL E 15 3 PROJECTION UNPUBL I SHED COPYRIGHT RELEASED 19 BY ANP FOR P U B L I C A T I O N INCORPORATED. ALL INTERNATIONAL 19 RIGHTS RESERVED. D 1 12 4 9 4 ± „015. 329 C GROUND I NG I N D E N T 5 CFOR - 3 , - 4 , - 7 S - 8
|
OCR Scan
|
08-TYP
05-FEB-01
A109
P005
|
PDF
|
A108
Abstract: A109 B633 MIL-T-10727
Text: 7 DRAWING THIS MADE IN THIRD DRAWING ANGLE 15 UNPUBLI5HED COPYRIGHT 6 5 PROJECTION 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL <3> 4 3 2 RIGHTS DI ST LOC 19 GP RESERVED. REV I 5 I0N 5 00 LTR ZONE D E S C R I R T I ON D REDRAW S 0 B 5
|
OCR Scan
|
N0M65R
18-FEB-99
amp40973
e/ssov026d/dsk04/dept4023/amp40973/edmmod
A108
A109
B633
MIL-T-10727
|
PDF
|
1U j 6
Abstract: No abstract text available
Text: 4 THIS DRAWING 7 IS C O P Y R IG H T 3 U N P U B L IS H E D . 19 FOR RELEASED BY AMP PUBLICATION ALL IN COR POR ATE D. R IG H T S 2 ,19 LOC R ES ER V ED . AF 4 . 67[ . 1 84] 1 7 . 37 [ .684] 50 DESCRIPTION L TR t M CIRCUIT UL_L : revisio n REV I D D IS T
|
OCR Scan
|
0G3A-0682-01
03JAN02
1ONOV2000
V2000
V2000
23FEB95
16-0CT-01
p02644
/home/amp02644/dmtec
1U j 6
|
PDF
|
A109
Abstract: MIL-C-50
Text: 4 DRAWING MA D E THIS IN THIRD DRAWING T ANGLE IS 3 UNPUBLISHED. COPYRIGHT RELEASED 19 BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL 2 <3> PROJECTION L OC , 19 RIGHTS DI 5 T D CONNECTOR MATES AHPLIHITE SERIES 108-40,005 FLANE R E V I 5 I ON' 00
|
OCR Scan
|
BD3132
0G40-429-98
0U1D-0275-00
03JAN02
MIL-C-50.
HIL-T-10727,
NIL-G-45204,
GQ-N-290.
T45352-2
T45352-1
A109
MIL-C-50
|
PDF
|
BD313
Abstract: S0845
Text: IN THIRD ANGLE PROJECTION RELEASED C C O P Y R I G H T RESERVED. AMP 19 7 2 BY PRODUCTS MAY AMP BE FOR PUBLICATION I N G O R P O R A T E D , HARR I S B O R G , P A . COVERED BY U.S. AND BORE IGN DECEMBER ALL 2 3, INTERNATIONAL PATENTS A ND/ O R 1 983 P F
|
OCR Scan
|
ECN-0156
ECN-0663
ECN-0834
ECN-0816
3-1S-85
BD3132
OU1D-0275-00
03JAN02
010-typ
BD313
S0845
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DR A WI NG THIS P MADE D RAWING COPYRIGHT THIRD ANGLE UNPUBLISHED 19 AMP RESERVED. IN 15 PRODUCTS MAY BE PROJECTION RELEASED AMP BY 3 FOR PUBLICATION I N C O R P O R A T E D , HARR I S B U R G , P A . COVERED BY U .S . MOD 2 AND BORE IGN D I ST GP 00 REV I 5 I0N 5
|
OCR Scan
|
BD-2202
23/arnp25061
/bd6112
g-24-85
A55INI
|
PDF
|