MBR10H35
Abstract: MBRB10H35
Text: MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series Vishay Semiconductors New Product formerly General Semiconductor Schottky Barrier Rectifiers Reverse Voltage 35 to 60 V Forward Current 10 A ITO-220AC MBRF10Hxx 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) TO-220AC (MBR10Hxx)
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MBR10Hxx,
MBRF10Hxx
MBRB10Hxx
ITO-220AC
MBRF10Hxx)
O-220AC
MBR10Hxx)
08-Apr-05
MBR10H35
MBRB10H35
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SUM09N20-270
Abstract: 03414
Text: SUM09N20-270 New Product Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 200 D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package ID (A) 0.270 @ VGS = 10 V 9 0.300 @ VGS = 6 V
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SUM09N20-270
O-263
S-03414--Rev.
03-Mar-03
SUM09N20-270
03414
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Si4835BDY
Abstract: 39TV
Text: Si4835BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.018 @ VGS = - 10 V - 9.6 APPLICATIONS 0.030 @ VGS = - 4.5 V - 7.5 D Load Switches
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Si4835BDY
S-03327--Rev.
03-Mar-03
39TV
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Si7409DN
Abstract: Si7409DN-T1
Text: Si7409DN New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.019 @ VGS = - 4.5 V - 11 0.031 @ VGS = - 2.5 V - 8.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile
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Si7409DN
07-mm
Si7409DN-T1
S-03372--Rev.
03-Mar-03
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Untitled
Abstract: No abstract text available
Text: Si3435DV New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.036 @ VGS = - 4.5 V - 6.3 0.050 @ VGS = - 2.5 V - 5.3 0.073 @ VGS = - 1.8 V - 4.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D
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Si3435DV
18-Jul-08
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MBR1635
Abstract: MBR1645 MBR1650 MBR1660 MBRF1635 MBRF1660
Text: MBR16xx, MBRF16xx & MBRB16xx Series Vishay Semiconductors formerly General Semiconductor Schottky Barrier Rectifier Reverse Voltage 35 to 60V Forward Current 16A ITO-220AC MBRF16xx 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80) 0.100 (2.54)
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MBR16xx,
MBRF16xx
MBRB16xx
ITO-220AC
MBRF16xx)
O-220AC
MBR16xx)
6R1645
MBR1650
MBR1660
MBR1635
MBR1645
MBR1660
MBRF1635
MBRF1660
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S-03419
Abstract: Si6552DQ
Text: Si6552DQ Vishay Siliconix Dual N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 0.08 @ VGS = 4.5 V "2.8 0.11 @ VGS = 2.5 V "2.1 0.1 @ VGS = - 4.5 V "2.5 0.18 @ VGS = - 2.5 V "1.9 20 P Channel P-Channel - 12 D1 S2 TSSOP-8
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Si6552DQ
18-Jul-08
S-03419
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DG2301DL
Abstract: DG2301 SC70-5 marking S A packages SC70-5 VA MARKING SC70-5 PACKAGE
Text: DG2301 New Product Vishay Siliconix High-Speed, Low rON, SPST Analog Switch 1-Bit Bus Switch FEATURES D D D D D D SC-70 5-Lead Package 5-W Switch Connection Between Two Ports Minimal Propagation Delay Through The Switch Low ICC Zero Bounce In Flow-Through Mode
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DG2301
SC-70
DG2301
S-03420--Rev.
03-Mar-03
DG2301DL
SC70-5
marking S A packages SC70-5
VA MARKING SC70-5 PACKAGE
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MBR16H35
Abstract: MBR16H45 MBR16H50 MBR16H60 MBRB16H35 MBRF16H35 MBRF16H60
Text: MBR16Hxx, MBRF16Hxx & MBRB16Hxx Series Vishay Semiconductors New Product formerly General Semiconductor Schottky Barrier Rectifiers Reverse Voltage 35 to 60 V Forward Current 16 A ITO-220AC MBRF16Hxx 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) TO-220AC (MBR16Hxx)
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MBR16Hxx,
MBRF16Hxx
MBRB16Hxx
ITO-220AC
MBRF16Hxx)
O-220AC
MBR16Hxx)
MBR16H45
MBR16H50
MBR16H60
MBR16H35
MBR16H45
MBR16H60
MBRB16H35
MBRF16H35
MBRF16H60
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Si3471DV
Abstract: No abstract text available
Text: SPICE Device Model Si3471DV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3471DV
03-Mar-03
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Si4800BDY
Abstract: No abstract text available
Text: Si4800BDY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.030 @ VGS = 4.5 V 7 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4800BDY
S-03295--Rev.
03-Mar-03
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Si7460DP
Abstract: Si7460DP-T1
Text: Si7460DP New Product Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0096 @ VGS = 10 V 18 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile 0.012 @ VGS = 4.5 V
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Si7460DP
07-mm
12/24-V
Si7460DP-T1
S-03416--Rev.
03-Mar-03
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Untitled
Abstract: No abstract text available
Text: Si6552DQ Vishay Siliconix Dual N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 0.08 @ VGS = 4.5 V "2.8 0.11 @ VGS = 2.5 V "2.1 0.1 @ VGS = - 4.5 V "2.5 0.18 @ VGS = - 2.5 V "1.9 20 P Channel P-Channel - 12 D1 S2 TSSOP-8
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Si6552DQ
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: DG417L/418L/419L Vishay Siliconix Precision Monolithic Low-Voltage CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D 2.7- thru 12-V Single Supply or "3- thru "6-Dual Supply D On-Resistance—r ON: 14 W D Fast Switching—tON: 28 ns —tOFF: 13 ns D TTL, CMOS Compatible
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DG417L/418L/419L
DG417L/418L/419L
DG417/418/419
08-Apr-05
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DO-204AL
Abstract: P4KE530 P4KE550
Text: P4KE530 and P4KE550 Vishay Semiconductors TRANSZORB Transient Voltage Suppressors Steady State Power 1W Peak Pulse Power 300W Breakdown Voltage 530, 550V DO-204AL DO-41 Plastic Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0
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P4KE530
P4KE550
DO-204AL
DO-41
DO-204AL
MIL-STD-750,
100mA
300mA.
03-Mar-03
P4KE550
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DG2303DL
Abstract: POLARITY SWITCH DG2303 HP4192A SC70-5 VA 5PIN MARKING
Text: DG2303 New Product Vishay Siliconix High-Speed, Low rON, 1.8-V/2.5-V/3.3-V/5-V, SPST Analog Switch 1-Bit Bus Switch FEATURES D D D D D D SC-70 5-Lead Package 5-W Switch Connection Between Two Ports Minimal Propagation Delay Through The Switch Low ICC Zero Bounce In Flow-Through Mode
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DG2303
SC-70
DG2303
08-Apr-05
DG2303DL
POLARITY SWITCH
HP4192A
SC70-5
VA 5PIN MARKING
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Untitled
Abstract: No abstract text available
Text: P4KE530 and P4KE550 Vishay Semiconductors TRANSZORB Transient Voltage Suppressors Steady State Power 1W Peak Pulse Power 300W Breakdown Voltage 530, 550V DO-204AL DO-41 Plastic Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0
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P4KE530
P4KE550
DO-204AL
DO-41
DO-204AL
MIL-STD-750,
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SMAJ530 and SMAJ550 Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA Steady State Power 1W Peak Pulse Power 300W Reverse Voltage 530,550V Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54)
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SMAJ530
SMAJ550
DO-214AC
DO-214AC
MIL-STD-750,
08-Apr-05
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03415
Abstract: SUM34N10-35
Text: SUM34N10-35 New Product Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 FEATURES rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 34 0.040 @ VGS = 6 V 32 D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package
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SUM34N10-35
O-263
S-03415--Rev.
03-Mar-03
03415
SUM34N10-35
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Untitled
Abstract: No abstract text available
Text: 7 T H I S DRAWING JÊL COPYRIGHT 15 U N PU B L IS H E D . 19 R E L E A S E D FOR P U B L I C A T I O N , 6 4 5 3 2 19 BY AMP INCORPORATED. D I ST LOC ALL R IG H T S R ES E R V E D . REVISIONS 22 AA DESCRIPTION H REACTIVATED: -1 PE R 03MAR03 D L D EC 0 5 1 1 - 0 0 3 4 - 0 3
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03MAR03
04-MAR-03
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST BD 00 R E V IS IO N S LTR R 1 DESCRIPTION ECO—0 5 —10192 DATE DWN APVD 060CT05 MB JO A MATERIAL: / A FRONT INSULATOR: PBT, 30 %GF, U L94V- 0, BU\CK COLOR
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4-40UNCx3
060CT05
UL94V-0,
03MAR03
05MAR03
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 2 TH I S DRAW ING IS U NP UBL I S HE D. COPYRIGHT 2 0 0 5 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S CORPORATION. ALL RIGHTS 2005 LOC REV 1S I O N S D I ST 00 GP RE S E RV E D. p LTR D E S C R 1P T I O N REV PER ECO- 05 - 009021
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JAN2006
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PBT 20 GF Tyco
Abstract: 5-747912-2
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S BD 00 LTR DESCRIPTION P1 53.01 ECO—05—10192 DATE DWN APVD 060 C T 0 5 MB JO MATERIAL: > FRONT INSULATOR: PBT, 30 %GF, U L94V - 0, BLACK COLOR
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060CT05
4-40UNCx3
UL94V-0,
03MAR03
05MAR03
31MAR2000
PBT 20 GF Tyco
5-747912-2
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION A LL RIGHTS RESERVED. COPYRIGHT BY TYCO ELECTRONICS CORPORATION. D 39.20 [ 1.544J 33.30 [1.312J 24.6 0 +0 .2 5 [.969 + .010] ^ I ji CLINCH NUT 4-40UNCx3.0 2 PLC Tfrtjr ^ iji 2.84 [.112] 12.50 [.493]
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4-40UNCx3
31MAR2000
10CT04
03MAR03
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