Untitled
Abstract: No abstract text available
Text: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET
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SiA411DJ
SC-70
SC-70-6L-Single
SiA411DJ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server
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Si7336ADP
Si7336ADP-T1-E3
Si7336ADP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C
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UL94-V0
E323964
16-NOV-09
03-MAR-08
26-DEC-07
19-DEC-06
21-JUN-04
09-MAR-99
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Si7686DP
Abstract: Si7686DP-T1-E3 Si7686DP-T1-GE3
Text: Si7686DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 35 0.014 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 9.2 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 RoHS COMPLIANT Rectifier D • DC/DC Converters
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Si7686DP
Si7686DP-T1-E3
Si7686DP-T1-GE3
11-Mar-11
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SC-70-6
Abstract: SiA513DJ SiA513DJ-T1-GE3
Text: New Product SiA513DJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel RDS(on) (Ω) Qg (Typ.) a 0.060 at VGS = 4.5 V 4.5 0.092 at VGS = 2.5 V 4.5a 0.110 at VGS = - 4.5 V - 4.5a 0.185 at VGS = - 2.5 V - 4.5a
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SiA513DJ
SC-70
SC-70-6
11-Mar-11
SiA513DJ-T1-GE3
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Si2301
Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)
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Si2301BDS
O-236
OT-23)
Si2301
Si2301BDS-T1
Si2301BDS-T1-E3
Si2301BDS-T1-GE3
08-Apr-05
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SiA413DJ
Abstract: SiA413DJ-T1-GE3
Text: New Product SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12 a 0.10 at VGS = - 1.5 V -3 • Halogen-free • TrenchFET Power MOSFET
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SiA413DJ
SC-70
SC-70-6L-Single
08-Apr-05
SiA413DJ-T1-GE3
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SiA411DJ
Abstract: SiA411DJ-T1-GE3
Text: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET
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SiA411DJ
SC-70
SC-70-6L-Single
08-Apr-05
SiA411DJ-T1-GE3
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si1016x-t1-ge3
Abstract: No abstract text available
Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V
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Si1016X
OT-563
SC-89
18-Jul-08
si1016x-t1-ge3
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74637
Abstract: SiA417
Text: New Product SiA417DJ Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 12a 0.031 at VGS = - 2.5 V - 12a 0.040 at VGS = - 1.8 V - 12 a 0.058 at VGS = - 1.5 V - 12a 0.095 at VGS = - 1.2 V
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SiA417DJ
SC-70
SC-70-6L-Single
SiA417DJ-T1-GE3
18-Jul-08
74637
SiA417
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Si2308BDS
Abstract: Si2308BDS-T1-E3
Text: New Product Si2308BDS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.156 at VGS = 10 V 2.3 0.192 at VGS = 4.5 V 2.1 VDS (V) 60 Qg (Typ.) • 100 % Rg Tested • 100 % UIS Tested 2.3 nC
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Si2308BDS
O-236
SSOT23)
Si2308BDS-T1-E3
18-Jul-08
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Si3459BDV
Abstract: Si3459BDV-T1-E3 804-30 mosfet 23 Tsop-6
Text: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 VDS (V) - 60 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) RoHS 4.4 nC APPLICATIONS
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Si3459BDV
Si3459BDV-T1-E3
15lectual
18-Jul-08
804-30
mosfet 23 Tsop-6
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Untitled
Abstract: No abstract text available
Text: New Product SiA513DJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel RDS(on) (Ω) Qg (Typ.) a 0.060 at VGS = 4.5 V 4.5 0.092 at VGS = 2.5 V 4.5a 0.110 at VGS = - 4.5 V - 4.5a 0.185 at VGS = - 2.5 V - 4.5a
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SiA513DJ
SC-70
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si7892BDP
Abstract: Si7892BDP-T1-E3 Si7892BDP-T1-GE3
Text: Si7892BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0042 at VGS = 10 V 25 0.0057 at VGS = 4.5 V 22 Qg (Typ.) 27 • Halogen-free available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®
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Si7892BDP
Si7892BDP-T1-E3
Si7892BDP-T1-GE3
11-Mar-11
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Si7366DP-T1-E3
Abstract: Si7366DP Si7366DP-T1-GE3
Text: Si7366DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0055 at VGS = 10 V 20 0.009 at VGS = 4.5 V 16 • Halogen-free available • TrenchFET Power MOSFET • Qg Optimized RoHS COMPLIANT APPLICATIONS
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Si7366DP
Si7366DP-T1-E3
Si7366DP-T1-GE3
11-Mar-11
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Si2301
Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)
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Si2301BDS
O-236
OT-23)
Si2301
Si2301BDS-T1
Si2301BDS-T1-E3
Si2301BDS-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET
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SiA411DJ
SC-70
SC-70-6L-Single
SiA411DJ-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7864ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ.) 57 • • • • • Halogen-free available TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ RDS(on)
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Si7864ADP
Si7864ADP-T1-E3
Si7864ADP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7358ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0042 at VGS = 10 V 23 0.0059 at VGS = 4.5 V 20 Qg (Typ.) 30.5 PowerPAK SO-8 • Halogen-free available • TrenchFET Power MOSFET RoHS COMPLIANT
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Si7358ADP
Si7358ADP-T1-E3
Si7358ADP-T1-GE3
08-Apr-05
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SIA450DJ
Abstract: No abstract text available
Text: New Product SiA450DJ Vishay Siliconix N-Channel 240-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 2.9 at VGS = 10 V 1.52 240 2.95 at VGS = 4.5 V 1.5 3.5 at VGS = 2.5 V 1.44 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiA450DJ
SC-70
SC-70-6L-Single
SiA450DJ-T1-GE3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si7856ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0037 at VGS = 10 V 25 0.0048 at VGS = 4.5 V 23 Qg (Typ.) 39 PowerPAK SO-8 • Halogen-free available Available • TrenchFET Power MOSFET RoHS*
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Si7856ADP
Si7856ADP-T1
Si7856ADP-T1-E3
Si7856ADP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7886ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0040 at VGS = 10 V 25 0.0048 at VGS = 4.5 V 23 Qg (Typ.) 47 • Halogen-free available • TrenchFET Power MOSFET RoHS COMPLIANT • Optimized for “Low Side” Synchronous
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Si7886ADP
Si7886ADP-T1-E3
Si7886ADP-T1-GE3
08-Apr-05
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1000-ESZ
Abstract: S571 CV7559
Text: REVISIONS TH IR D AN G LE PROJ. NOTES: 1. MATERIALS AND FINISHES: BODY - BRASS, NICKEL PLATING CONTACT - BRASS, GOLD PLATING INSULATOR - TEFLON, NATURAL 2. ELECTRICAL: A. IMPEDANCE: 75 OHM B. FREQUENCY RANGE: DC 0 - 2 GHz C. DIELECTRIC WITHSTANDING VOLTAGE:
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-S-571,
26-Jan-10
24--Mar-10
\DWG\CNPD\31\71008\1000-ESZ
1000-ESZ
S571
CV7559
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93SX4
Abstract: 93SX47 VDQ9327 ze 003
Text: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER PLASTIC PLUNGER REV DOCUMENT C H A N G E D BY CHECK 3 0038558 SS 08MAY08 BLR rer 93SX47 PRODUCT CODE VDQ9327 88± . 0 I0 . 0 3 0d= . 0 1 0 . 0 9 1 MAX D±A MTG HOL E R .063 B DIA B T 3 5 0 ± .0 I 0 i I 50d= . 0 1 0
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93SX47
VDQ9327
08MAY08
PR-18803
03MAR08
5M-1982
93SX4
93SX47
VDQ9327
ze 003
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