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    03SEP2010 Search Results

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    Untitled

    Abstract: No abstract text available
    Text: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%


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    PDF STAC4932B 2002/95/EC STAC244B STAC4932B DocID17153

    MEC 1300

    Abstract: STAC4932 STAC4932B 1000WF
    Text: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European


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    PDF STAC4932B 2002/95/EC STAC244B STAC4932B MEC 1300 STAC4932 1000WF

    thermal printer interface sample code

    Abstract: lcd power board schematic APS 254 FM205-HS vending machine schematic diagram STM32F10C-EVAL STM3210C-EVAL getting started thermal printer sample code ticket vending machine using microcontroller ST thermal printer Parking ticket vending machine
    Text: UM0977 User manual Thermal printer adapter board for the STM3210C-EVAL Introduction The thermal printer adapter board for the STM3210C-EVAL is an addition to the solution of parking ticket vending machines. This daughter board is interfaced with a Connectivity line


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    PDF UM0977 STM3210C-EVAL STM3210C-EVAL L293DD) thermal printer interface sample code lcd power board schematic APS 254 FM205-HS vending machine schematic diagram STM32F10C-EVAL STM3210C-EVAL getting started thermal printer sample code ticket vending machine using microcontroller ST thermal printer Parking ticket vending machine

    STD8NM50N

    Abstract: STP8NM50N 8NM50N STF8NM50N
    Text: STD8NM50N, STF8NM50N STP8NM50N, STU8NM50N N-channel 500 V, 0.73 Ω, 5 A MDmesh II Power MOSFET in DPAK, IPAK, TO-220 and TO-220FP Features Order codes VDSS@TJMAX RDS on max. STD8NM50N STF8NM50N STP8NM50N STU8NM50N ID 3 2 1 550 V < 0.79 Ω DPAK 5A • 100% avalanche tested


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    PDF STD8NM50N, STF8NM50N STP8NM50N, STU8NM50N O-220 O-220FP STD8NM50N STP8NM50N STD8NM50N STP8NM50N 8NM50N STF8NM50N

    L2720W

    Abstract: l2720w13 SO16 wide package L2720W13TR 13407
    Text: L2720W Low drop dual power operational amplifiers Features „ Output current up to 1 A „ Operates at low voltages „ Single or split supply „ Large common-mode and differential-mode range „ Low input-offset voltage „ Ground compatible inputs „ Low saturation voltage


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    PDF L2720W L2720W l2720w13 SO16 wide package L2720W13TR 13407

    STAC4932

    Abstract: STAC4932B 1715-3
    Text: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10% ■ In compliance with the 2002/95/EC European


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    PDF STAC4932B 2002/95/EC STAC244B STAC4932B STAC4932 1715-3

    Untitled

    Abstract: No abstract text available
    Text: L2720W Low drop dual power operational amplifiers Features ̈ Output current up to 1 A ̈ Operates at low voltages ̈ Single or split supply ̈ Large common-mode and differential-mode range ̈ Low input-offset voltage ̈ Ground compatible inputs ̈ Low saturation voltage


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    PDF L2720W L2720W

    STD8NM50

    Abstract: STF8NM50N 8NM50N
    Text: STD8NM50N, STP8NM50N, STU8NM50N N-channel 500 V, 0.73 Ω typ., 5 A MDmesh II Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet — production data Features TAB Order codes VDSS@TJMAX RDS on max. STD8NM50N STP8NM50N STU8NM50N ID 3 1 550 V < 0.79 Ω


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    PDF STD8NM50N, STP8NM50N, STU8NM50N O-220 STD8NM50N STP8NM50N O-220 STD8NM50 STF8NM50N 8NM50N

    Untitled

    Abstract: No abstract text available
    Text: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%


    Original
    PDF STAC4932B 2002/95/EC STAC244B STAC4932B DocID17153

    L3G4200

    Abstract: L3G4200D L3G4200DH LGA-16 4x4x1 mm land pattern LGA-16 dps 500 DO13 DO14 DO15 1101001b
    Text: L3G4200D MEMS motion sensor: three-axis digital output gyroscope Preliminary data Features • Three selectable full scales 250/500/2000 dps ■ I2C/SPI digital output interface ■ 16 bit-rate value data output ■ 8-bit temperature data output ■ Two digital output lines (interrupt and data


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    PDF L3G4200D L3G4200D 16-bit L3G4200 L3G4200DH LGA-16 4x4x1 mm land pattern LGA-16 dps 500 DO13 DO14 DO15 1101001b

    L3G4200D

    Abstract: No abstract text available
    Text: L3G4200D MEMS motion sensor: ultra-stable three-axis digital output gyroscope Preliminary data Features • Three selectable full scales 250/500/2000 dps ■ I2C/SPI digital output interface ■ 16 bit-rate value data output ■ 8-bit temperature data output


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    PDF L3G4200D L3G4200D

    8NM50N

    Abstract: No abstract text available
    Text: STD8NM50N STP8NM50N, STU8NM50N N-channel 500 V, 0.73 Ω, 5 A MDmesh II Power MOSFET in DPAK, TO-220 and IPAK Features TAB Order codes VDSS@TJMAX RDS on max. STD8NM50N STP8NM50N STU8NM50N ID 3 1 550 V < 0.79 Ω DPAK 5A TAB • 100% avalanche tested ■


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    PDF STD8NM50N STP8NM50N, STU8NM50N O-220 STP8NM50N O-220 8NM50N

    HER304G

    Abstract: HER307g HER301G 307 g
    Text: HER301G ~ HER307G VOLTAGE 50 ~ 1000 V 3 A, Glass Passivated High Efficiency Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES DO-27 Low forward voltage drop High current capability High reliability


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    PDF HER301G HER307G DO-27 MIL-STD-202, 03-Sep-2010 HER304G HER307g HER301G 307 g

    CZD1225

    Abstract: CZD2983
    Text: CZD2983 NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente DESCRIPTION The CZD2983 is designed for power amplifier and driver stage amplifier applications. D-Pack TO-252 FEATURES  High transition frequency:fT = 100MHz (Typ.)  Complements to CZD1225


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    PDF CZD2983 CZD2983 O-252) 100MHz CZD1225 100mA 03-Sep-2010 CZD1225

    8NM50N

    Abstract: STF8NM50 STF8NM50N STD8NM50 STP8NM50N STD8NM50N 0735A
    Text: STD8NM50N, STF8NM50N STP8NM50N, STU8NM50N N-channel 500 V, 0.73 Ω, 5 A MDmesh II Power MOSFET in DPAK, IPAK, TO-220 and TO-220FP Features Order codes VDSS @TJMAX STD8NM50N STF8NM50N STP8NM50N STU8NM50N RDS on max. 3 ID 3 1 2 1 DPAK 550 V < 0.79 Ω IPAK


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    PDF STD8NM50N, STF8NM50N STP8NM50N, STU8NM50N O-220 O-220FP STD8NM50N STP8NM50N 8NM50N STF8NM50 STF8NM50N STD8NM50 STP8NM50N STD8NM50N 0735A

    L3G4200D

    Abstract: L3G4200 LGA-16 4x4x1 mm land pattern L3G4200DTR dps 500 DO13 DO14 DO15 LGA-16 DSASW003741
    Text: L3G4200D MEMS motion sensor: ultra-stable three-axis digital output gyroscope Preliminary data Features • Three selectable full scales 250/500/2000 dps ■ I2C/SPI digital output interface ■ 16 bit-rate value data output ■ 8-bit temperature data output


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    PDF L3G4200D L3G4200D L3G4200 LGA-16 4x4x1 mm land pattern L3G4200DTR dps 500 DO13 DO14 DO15 LGA-16 DSASW003741

    PA66-0F30

    Abstract: No abstract text available
    Text: T H IS DRAWING VFRTRAIII IfHF IS U N P U B L IS H ED . 11NVFR0FFFFNTI I F H T F C O P Y R I G H T 2005 TE R E L E A S E D 7 F I F HNI 1NG Connectivity FRF I FUFR FOR P U B LIC A T IO N MATED V F R Í 1 F F F F N T I I EHI I NG A LL Al I F R IG H T S RFEHTF


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    PDF 11NVFR0FFFFNTI 03SEP2010 11APR2013 21A0G2008 PA66-0F30 PAA6-0F15 S-1718811 PA66-0F30

    Untitled

    Abstract: No abstract text available
    Text: T H I S DR AWI NG I S UN P U R I I S H F Q . T f T M ' l i ri l f '•I ^ L k U L I I LUI L i n n l T l I CHNUNG C C O P Y R I G H T 20 0 8 BY TYCO R E L E A S E D FOR P U B L I C A T I O N FREI FUER V E R ÖF F E N T L I C HU N G ELECTRONICS CORPORATION.


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    PDF EGATN05213 S719105 MAR200Ã