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    040N06N Search Results

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    040N06N Price and Stock

    Infineon Technologies AG IPI040N06N3GXKSA1

    MOSFET N-CH 60V 90A TO262-3
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    Infineon Technologies AG IPA040N06NM5SXKSA1

    MOSFET N-CH 60V 72A TO220
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    Infineon Technologies AG IPA040N06NXKSA1

    MOSFET N-CH 60V 69A TO220-FP
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    DigiKey IPA040N06NXKSA1 Tube 420 1
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    Infineon Technologies AG IPP040N06NAKSA1

    MOSFET N-CH 60V 20A/80A TO220-3
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    DigiKey IPP040N06NAKSA1 Tube 92 1
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    Infineon Technologies AG IPP040N06N3GXKSA1

    MOSFET N-CH 60V 90A TO220-3
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    Mouser Electronics IPP040N06N3GXKSA1 672
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    Find more 040N06N price and stock on Findchips.com

    040N06N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    040n06n

    Abstract: 037N06N IEC61249-2-21 PG-TO220-3 PG-TO262-3
    Text: Type IPB037N06N3 G 040N06N3 G 040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • for sync. rectification, drives and dc/dc SMPS R DS on ,max (SMD) 3.7 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 90 A previous engineering


    Original     		IPB037N06N3 IPI040N06N3 IPP040N06N3 IPP04xN06N IPI04xN06N IPB04xN06N IEC61249-2-21 040n06n 037N06N IEC61249-2-21 PG-TO220-3 PG-TO262-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Type 040N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 4.0 mW • Superior thermal resistance ID 80 A • N-channel • Qualified according to JEDEC for target applications


    Original     		IPP040N06N IEC61249-2-21 PG-TO220-3 040N06N PDF

    040n06n

    Abstract: No abstract text available
    Text: Type 040N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications


    Original     		IPP040N06N IEC61249-2-21 PG-TO220-3 040N06N 50K/W 040n06n PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V 040N06N DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V 040N06N 1Description TO-220-FP Features • .


    Original     		IPA040N06N O-220-FP IEC61249-2-21 PDF

    040n06n

    Abstract: 037N06N 040n06 d90 smd JESD22 PG-TO220-3
    Text: IPB037N06N3 G Type 040N06N3 G 040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max (SMD) 3.7 mΩ ID 90 A • Very low on-resistance R DS(on)


    Original     		IPB037N06N3 IPI040N06N3 IPP040N06N3 IPP04xN06N IPI04xN06N IPB04xN06N PG-TO263-3 040n06n 037N06N 040n06 d90 smd JESD22 PG-TO220-3 PDF

    040n06n

    Abstract: No abstract text available
    Text: Type 040N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 4.0 mW • Superior thermal resistance ID 80 A • N-channel 1) • Qualified according to JEDEC for target applications


    Original     		IPP040N06N IEC61249-2-21 PG-TO220-3 040N06N 50K/W 040n06n PDF