IGCT
Abstract: IGCT thyristor ABB igct abb IGCT thyristor current max gct thyristor HFBR-2528
Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 340 2.1 1.8 4.7 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 04D4502 mΩ Ω V Doc. No. 5SYA1224-03 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs
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IGCT
IGCT thyristor ABB
igct abb
IGCT thyristor current max
gct thyristor
HFBR-2528
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IGCT thyristor ABB
Abstract: IGCT
Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 340 2.1 1.80 4.7 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 04D4502 mΩ Ω V Doc. No. 5SYA1224-03 Sep. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs
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IGCT thyristor ABB
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Untitled
Abstract: No abstract text available
Text: Key Parameters VDRM = 4500 ITGQM = 340 ITSM = 3 VT0 = 1.5 rT = 4.4 VDClink = 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 04D4502 PRELIMINARY Doc. No. 5SYA 1224-02 Feb. 99 • • • • • • • • Features Direct fiber optic control
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igct abb
Abstract: IGCT thyristor ABB C340A 5SHX 14
Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 340 2.1 1.80 4.7 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 04D4502 Doc. No. 5SYA 1224-03 Aug. 2000 • Direct fiber optic control • Fast response ∆tdon < 3 µs, tdoff < 6 µs
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IGCT thyristor ABB
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connector wago
Abstract: No abstract text available
Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 340 2.1 1.8 4.7 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 04D4502 mΩ Ω V Doc. No. 5SYA1224-03 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs
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04D4502
5SYA1224-03
04D4502
CH-5600
connector wago
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Untitled
Abstract: No abstract text available
Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 340 2.1 1.8 4.7 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 04D4502 mΩ Ω V Doc. No. 5SYA1224-03 Nov. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs
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diode sy 170
Abstract: 26L4503 5SHX 14H4502 KN11 35L45 35l450
Text: I N T E G R A T E D G A T E - C O M M U T A T E D _ T H Y R I S T O R S - Patented free-floating silicon techno logy. - Patented low-inductance housing technology. - Optional snubberless operation. - Exceptionally low on-state losses.
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