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    Untitled

    Abstract: No abstract text available
    Text: M69AR048B 32 Mbit 2M x16 1.8V Asynchronous 1T/1C SRAM PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ ACCESS TIMES: 70ns, 80ns, 85ns ■ LOW STANDBY CURRENT: 100µA ■ DEEP POWER DOWN CURRENT: 10µA ■ BYTE CONTROL: UB/LB ■ PROGRAMMABLE PARTIAL ARRAY


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    PDF M69AR048B TFBGA48

    M50FLW040A

    Abstract: M50FLW040B PLCC32 TSOP32
    Text: M50FLW040A M50FLW040B 4 Mbit 5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ FLASH MEMORY – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1)


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    PDF M50FLW040A M50FLW040B 64KByte 33MHz M50FLW040A) M50FLW040B M50FLW040A PLCC32 TSOP32

    M50FLW040A

    Abstract: M50FLW040B PLCC32 TSOP32 A19-21
    Text: M50FLW040A M50FLW040B 4 Mbit 5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ FLASH MEMORY – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1)


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    PDF M50FLW040A M50FLW040B 64KByte 33MHz M50FLW040A) M50FLW040B) M50FLW040A M50FLW040B PLCC32 TSOP32 A19-21

    SAMSUNG NAND FLASH

    Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
    Text: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for


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    PDF AN1838 Byte/264 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits SAMSUNG NAND FLASH Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8

    ICCP16

    Abstract: No abstract text available
    Text: M69AR048B 32 Mbit 2Mb x16 1.8V Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V ACCESS TIMES: 70ns, 80ns, 85ns LOW STANDBY CURRENT: 100µA DEEP POWER-DOWN CURRENT: 10µA BYTE CONTROL: UB/LB PROGRAMMABLE PARTIAL ARRAY


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    PDF M69AR048B TFBGA48 M69AR048BL70ZB8T M69AR048B ICCP16

    PPLC32

    Abstract: No abstract text available
    Text: M50FLW040A M50FLW040B 4 Mbit 5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory PRELIMINARY DATA FEATURES SUMMARY • FLASH MEMORY ■ – Compatible with either LPC interface or FWH interface (Intel Spec rev1.1) used in PC BIOS


    Original
    PDF M50FLW040A M50FLW040B 64KByte 33MHz M50FLW040A) PPLC32

    M50FLW040A

    Abstract: M50FLW040B PLCC32 TSOP32
    Text: M50FLW040A M50FLW040B 4-Mbit 5 x 64 Kbyte blocks + 3 × 16 × 4 Kbyte sectors 3-V supply Firmware Hub / low-pin count Flash memory Feature summary • ■ ■ ■ ■ Flash memory – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1) used


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    PDF M50FLW040A M50FLW040B 33MHz PLCC32 M50FLW040A) M50FLW040B) TSOP32 M50FLW040A M50FLW040B PLCC32 TSOP32

    Untitled

    Abstract: No abstract text available
    Text: M50FLW040A M50FLW040B 4 Mbit 5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory FEATURES SUMMARY • FLASH MEMORY Figure 1. Packages – ■ Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1)


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    PDF M50FLW040A M50FLW040B 64KByte 33MHz M50FLW040A) M50FLW040B)

    M69AR048B

    Abstract: TFBGA48
    Text: M69AR048B 32 Mbit 2Mb x16 1.8V Asynchronous PSRAM PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V ACCESS TIMES: 70ns, 80ns, 85ns LOW STANDBY CURRENT: 100µA DEEP POWER-DOWN CURRENT: 10µA BYTE CONTROL: UB/LB


    Original
    PDF M69AR048B TFBGA48 M69AR048B TFBGA48

    M69AR048B

    Abstract: TFBGA48
    Text: M69AR048B 32 Mbit 2Mb x16 1.8V Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V ACCESS TIMES: 70ns, 80ns, 85ns LOW STANDBY CURRENT: 100µA DEEP POWER-DOWN CURRENT: 10µA BYTE CONTROL: UB/LB PROGRAMMABLE PARTIAL ARRAY


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    PDF M69AR048B TFBGA48 M69AR048B TFBGA48

    Untitled

    Abstract: No abstract text available
    Text: DD NDT SCALE D IM E N S IO N S IN METRIC mm THIRD ANGLE PROJECTION NDTESi 1 S E C T IO N 1G, 2 ± 0, 25 C = N - l x 2 J 54+8, 6 h o - FDR -c=H B TABLE I 0, 4 MIN. M A T I N G CDNTACT AREA =< N - l ) x 2 , 5 4 + 5 , 1 SEE TA K E NUMBER DF P O S I T I O N S


    OCR Scan
    PDF C-166087

    H9302

    Abstract: No abstract text available
    Text: DO ± 0, 1 5 NOT SCALE DIMENSIONS THIRD ANGLE METRIC IN m m PR O JECTIO N F NOTES A C O R I N G O U T S <4x □PHONAL C O N T A C T ARE A TO BE L U B R I C A T E D WIT H L U B R I C A T I O N C E L E C T R O L U B E 2X> MIN. 1 1 0 m g / 1 0 0 0 C O N T A C T S


    OCR Scan
    PDF 05MAR2004 04JUL2003 C-100318 H9302