Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    04JUN2003 Search Results

    04JUN2003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: M45PE10 1 Mbit, page-erasable serial Flash memory with byte-alterability and 75 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 75 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 1 Mbit of page-erasable Flash memory


    Original     		PDF M45PE10 4011h)

    M45PE20

    Abstract: ST10
    Text: M45PE20 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)


    Original     		PDF M45PE20 25MHz 4012h) M45PEthout M45PE20 ST10

    Untitled

    Abstract: No abstract text available
    Text: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.7 to 1.95V ACCESS TIME: 70ns, 80ns LOW STANDBY CURRENT: 100µA DEEP POWER DOWN CURRENT: 10µA COMPATIBLE WITH STANDARD LPSRAM


    Original     		PDF M69AR024B TFBGA48

    Untitled

    Abstract: No abstract text available
    Text: M45PE16 16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50-MHz SPI bus interface Preliminary Data Feature summary • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 16 Mbit of Page-Erasable Flash memory


    Original     		PDF M45PE16 50-MHz 4015h)

    Untitled

    Abstract: No abstract text available
    Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 8Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)


    Original     		PDF M45PE80 33MHz 4014h)

    M45PE10

    Abstract: No abstract text available
    Text: M45PE10 1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 75 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 1-Mbit of page-erasable Flash memory


    Original     		PDF M45PE10 4011h) M45PE10

    M45PE16

    Abstract: No abstract text available
    Text: M45PE16 16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Preliminary Data Features • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 16 Mbit of Page-Erasable Flash memory


    Original     		PDF M45PE16 4015h) M45PE16

    M45PE80

    Abstract: numonyx M45PE80 VFQFPN8 E4247 SO8 Wide Package
    Text: M45PE80 8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 8 Mbit of Page-Erasable Flash memory


    Original     		PDF M45PE80 4014h) M45PE80 numonyx M45PE80 VFQFPN8 E4247 SO8 Wide Package

    M69AR024B

    Abstract: TFBGA48
    Text: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE: 1.7 to 1.95V ■ ACCESS TIME: 70ns, 80ns ■ LOW STANDBY CURRENT: 100µA ■ DEEP POWER DOWN CURRENT: 10µA ■ COMPATIBLE WITH STANDARD LPSRAM


    Original     		PDF M69AR024B TFBGA48 M69AR024B TFBGA48

    Untitled

    Abstract: No abstract text available
    Text: M45PE10 1 Mbit, page-erasable serial Flash memory with byte-alterability and 75 MHz SPI bus interface Features SPI bus compatible serial interface 75 MHz clock rate maximum 2.7 V to 3.6 V single supply voltage 1 Mbit of page-erasable Flash memory Page size: 256 bytes


    Original     		PDF M45PE10 4011h)

    M69AR024B

    Abstract: TFBGA48
    Text: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.7 to 2.25V ACCESS TIME: 70ns, 80ns LOW STANDBY CURRENT: 110µA DEEP POWER DOWN CURRENT: 10µA COMPATIBLE WITH STANDARD LPSRAM TRI-STATE COMMON I/O


    Original     		PDF M69AR024B TFBGA48 M69AR024B TFBGA48

    Marking STMicroelectronics Single digit week

    Abstract: VDFPN8 package M45PE80 SO16 wide package
    Text: M45PE80 8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 8 Mbit of Page-Erasable Flash memory


    Original     		PDF M45PE80 4014h) Marking STMicroelectronics Single digit week VDFPN8 package M45PE80 SO16 wide package

    Untitled

    Abstract: No abstract text available
    Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 8Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)


    Original     		PDF M45PE80 25MHz 4014h)

    M45PE10

    Abstract: ST10
    Text: M45PE10 1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)


    Original     		PDF M45PE10 25MHz 4011h) M45PEthout M45PE10 ST10

    Untitled

    Abstract: No abstract text available
    Text: M29W641DH, M29W641DL M29W641DU 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional)


    Original     		PDF M29W641DH, M29W641DL M29W641DU 120ns 32-KWord TSOP48 M29W641DH:

    Untitled

    Abstract: No abstract text available
    Text: M29W641DH, M29W641DL M29W641DU 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional)


    Original     		PDF M29W641DH, M29W641DL M29W641DU 120ns 32-KWord TSOP48 M29W641DH:

    Untitled

    Abstract: No abstract text available
    Text: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.7 to 1.95V ACCESS TIME: 70ns, 80ns LOW STANDBY CURRENT: 100µA DEEP POWER DOWN CURRENT: 10µA COMPATIBLE WITH STANDARD LPSRAM TRI-STATE COMMON I/O


    Original     		PDF M69AR024B TFBGA48

    M69AR024B

    Abstract: TFBGA48
    Text: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.7 to 2.25V ACCESS TIME: 70ns, 80ns LOW STANDBY CURRENT: 110µA DEEP POWER DOWN CURRENT: 10µA COMPATIBLE WITH STANDARD LPSRAM TRI-STATE COMMON I/O


    Original     		PDF M69AR024B TFBGA48 M69AR024B TFBGA48

    M45PE80

    Abstract: ST10
    Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 8Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)


    Original     		PDF M45PE80 25MHz 4014h) M45PE80 ST10

    AI06811B

    Abstract: No abstract text available
    Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • 8Mbit of Page-Erasable Flash Memory ■ Page Write up to 256 Bytes in 11ms (typical) ■ Page Program (up to 256 Bytes) in 1.2ms


    Original     		PDF M45PE80 25MHz 4014h) AI06811B

    Untitled

    Abstract: No abstract text available
    Text: M45PE20 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)


    Original     		PDF M45PE20 25MHz 4012h)

    Untitled

    Abstract: No abstract text available
    Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • 8Mbit of Page-Erasable Flash Memory ■ Page Write up to 256 Bytes in 11ms (typical) ■ Page Program (up to 256 Bytes) in 1.2ms


    Original     		PDF M45PE80 25MHz 4014h)

    Untitled

    Abstract: No abstract text available
    Text: M69AR024B 16 Mbit 1M x16 1.8V Supply, Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.7 to 2.25V ACCESS TIME: 70ns, 80ns LOW STANDBY CURRENT: 110µA DEEP POWER DOWN CURRENT: 10µA COMPATIBLE WITH STANDARD LPSRAM TRI-STATE COMMON I/O


    Original     		PDF M69AR024B TFBGA48

    M45PE10

    Abstract: No abstract text available
    Text: M45PE10 1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 1 Mbit of Page-Erasable Flash memory


    Original     		PDF M45PE10 4011h) M45PE10