SSD40N10-30D
Abstract: MosFET
Text: SSD40N10-30D 26A, 100V, RDS ON 36mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free FEATURES TO-252(D-Pack) Low RDS(on) trench technology. Low thermal impedance. Fast switching speed.
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SSD40N10-30D
O-252
O-252
04-May-2011
SSD40N10-30D
MosFET
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Untitled
Abstract: No abstract text available
Text: PD84010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V ■ Plastic package
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PD84010-E
2002/95/EC
PowerSO-10RF
PD84010-E
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Untitled
Abstract: No abstract text available
Text: PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection
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PD85035-E
2002/95/EC1
PowerSO-10RF
PD85035-E
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Untitled
Abstract: No abstract text available
Text: STPS10L60C Power Schottky rectifier Features A1 • Low forward voltage drop ■ Negligible switching losses ■ Insulated package: – Insulating voltage = 2000 V DC – Capacitance = 12 pF ■ Avalanche capability specified K A2 A2 Description K A1 Dual center tap Schottky rectifier suited for switch
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STPS10L60C
O-220FPAB
STPS10L60CFP
O-220FPAB,
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Untitled
Abstract: No abstract text available
Text: WT-108DP100 Zener Diode Chips for ESD Protection 1. Feature: 1-1 This specification applies to P/N silicon diode chips. 2. Structure: 2-1 planar type. 2-2 Electrodes : P Anode side : Aluminum alloy. N (Cathode) side : Gold Layer. 3. Size: 3-1. Chip Size : 7.9 mils x 7.9 mils (200 µm x 200 µm ).
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WT-108DP100
04-May-2011
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Untitled
Abstract: No abstract text available
Text: Software for Stress Analysis Testing Micro-Measurements StrainSmart Data Acquisition System StrainSmart is a ready-to-use, Windows®-based software system for acquiring, reducing, presenting, and storing measurement data from strain gages, strain-gage-based
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27-Apr-11
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Untitled
Abstract: No abstract text available
Text: PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 12 dB gain @ 500 MHz ■ New RF plastic package
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PD54003-E
PowerSO-10RF
PowerSO-10RF.
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Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 LOC - ALL RIGHTS RESERVED. BY - -A- REVISIONS DIST - P LTR A A1 -A- DESCRIPTION DATE DWN APVD REVISED PER ECR-12-002666 08AUG2012 RS MM REVISED PER ECR-14-000133 22JAN2014 YR OL
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ECR-12-002666
08AUG2012
ECR-14-000133
22JAN2014
2002/95/EC
04MAY2011
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J-STD-020B
Abstract: PD54008-E PD54008S-E PD54008STR-E PD54008TR-E smd code electrolitic capacitor
Text: PD54008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V ■ New RF plastic package PowerSO-10RF
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PD54008-E
PowerSO-10RF
PowerSO-10RF.
J-STD-020B
PD54008-E
PD54008S-E
PD54008STR-E
PD54008TR-E
smd code electrolitic capacitor
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AN1294
Abstract: J-STD-020B PD85035-E PD85035S-E PD85035STR-E PD85035TR-E PD85035
Text: PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection
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PD85035-E
2002/95/EC1
PowerSO-10RF
PD85035-E
AN1294
J-STD-020B
PD85035S-E
PD85035STR-E
PD85035TR-E
PD85035
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Untitled
Abstract: No abstract text available
Text: PD84010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V ■ Plastic package ■ ESD protection
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PD84010-E
2002/95/EC
PowerSO-10RF
PD84010-E
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Untitled
Abstract: No abstract text available
Text: STBP110 Overvoltage protection device Preliminary data Features • Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch - Low RDS on of 170 mΩ ■ Integrated charge pump ■ Maximum continuous current of 1.2 A ■
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STBP110
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STPS10L60C
Abstract: STPS10L60CFP
Text: STPS10L60C Power Schottky rectifier Features A1 • Low forward voltage drop ■ Negligible switching losses ■ Insulated package: – Insulating voltage = 2000 V DC – Capacitance = 12 pF ■ Avalanche capability specified K A2 A2 Description K A1 Dual center tap Schottky rectifier suited for switch
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STPS10L60C
O-220FPAB
STPS10L60CFP
O-220FPAB,
STPS10L60C
STPS10L60CFP
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k 3436 transistor
Abstract: J-STD-020B PD54003-E PD54003S-E PD54003STR-E PD54003TR-E RF Transistor s-parameter s22f 6 pin
Text: PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 12 dB gain @ 500 MHz ■ New RF plastic package PowerSO-10RF formed lead
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PD54003-E
PowerSO-10RF
PowerSO-10RF.
k 3436 transistor
J-STD-020B
PD54003-E
PD54003S-E
PD54003STR-E
PD54003TR-E
RF Transistor s-parameter
s22f 6 pin
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1a6 SMD diode
Abstract: MARKING CODE 2B5 smd diode code 1B2 TSSOP48 outline LVCH162245A
Text: INTEGRATED CIRCUITS DATA SHEET 74LVC162245A; 74LVCH162245A 16-bit transceiver with direction pin; 30 Ω series termination resistors; 5 V tolerant input/output; 3-state Product specification Supersedes data of 1998 Feb 17 2003 Dec 08 Philips Semiconductors
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74LVC162245A;
74LVCH162245A
16-bit
74LVCH162245A
ICP1020807
04-May-2011
1a6 SMD diode
MARKING CODE 2B5
smd diode code 1B2
TSSOP48 outline
LVCH162245A
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protectron
Abstract: No abstract text available
Text: UM1058 User manual STEVAL-ILL029V2/STEVAL-CBP007V1: front panel demo with STLED325 and STMPE24M31 based touch panel Introduction This document explains the operation of the front panel demonstration board based on the advanced LED controller driver STLED325 and 8-bit microcontroller STM8S as I2C master.
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UM1058
STEVAL-ILL029V2/STEVAL-CBP007V1:
STLED325
STMPE24M31
STMPE24M31-based
protectron
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Untitled
Abstract: No abstract text available
Text: STBP110 Overvoltage protection device Datasheet - production data Features • Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch - low RDS on of 170 mΩ ■ Integrated charge pump ■ Maximum continuous current of 1.2 A
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STBP110
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Untitled
Abstract: No abstract text available
Text: PD54008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V ■ New RF plastic package PowerSO-10RF
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PD54008-E
PowerSO-10RF
PowerSO-10RF.
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Untitled
Abstract: No abstract text available
Text: PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 12 dB gain @ 500 MHz ■ New RF plastic package
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Original
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PD54003-E
PowerSO-10RF
PowerSO-10RF.
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Untitled
Abstract: No abstract text available
Text: STBP110 Overvoltage protection device Datasheet - production data Features • Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch - low RDS on of 170 mΩ ■ Integrated charge pump ■ Maximum continuous current of 1.2 A
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STBP110
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114-18679-3
Abstract: pa66-gf30 PA6-GF15 PA46-GF15 PA66GF30 114-18679 PA66-GF15 PA6GF15 114186793 PA66GF15
Text: T H I S DRAWING IS U N P U B L I S H E D . VERTRAULI CHE UNVE ROE FFE NTLI CH TE ZEICHNUNG R E L E A S E D FOR P U B L IC A T IO N FREI FUER V E R O E F F E N T L I C H U N G ALL RIGHTS RESERVED. Al I F R F C H T F V D R R F H A I T F N . C O P Y R I G H T 2004
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OCR Scan
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10JAN2011
04MAY2011
03APR2012
CC0-11-005150
ORDER4805
0L00R
S-1718806
114-18679-3
pa66-gf30
PA6-GF15
PA46-GF15
PA66GF30
114-18679
PA66-GF15
PA6GF15
114186793
PA66GF15
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