THEFT

Abstract: "Mitsubishi SINGLE CHIP MICROCOMPUTER" c816 M30217MA-XXXXFP M30218 M30218FCFP M30218MC-XXXXFP DSA003632
Contextual Info: Mitsubishi single-chip microcomputer M30218 Group User’s manual tentative Specifications written in this user's manual are believed to be accurate, but are not guaranteed to be entirely free of error. Specifications in this manual may be changed for functional or performance improvements. Please make sure your manual is the latest edition.

M30218

Abstract: 052b16 CM06 05A11
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

M30218

Contextual Info: n er me nd lop U e v de t Tentative Specifications REV.A1 Description Mitsubishi microcomputers Specifications in this manual are tentative and subject to change. M30218 Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description The M30218 group of single-chip microcomputers are built using the high-performance silicon gate CMOS

P216B

Abstract: 035E-16
Contextual Info: MITSUBISHI 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/20 SERIES M30218 Group User’s Manual http://www.infomicom.maec.co.jp/indexe.htm Before using this material, please visit the above website to confirm that this is the most current document available.

MCE OR KDI

Abstract: PCX-050-F-50 DC-12 MIL-R-10509 MIL-R-55342 PCX050-F-150 PCX100-F-150
Contextual Info: HIGH POWER COAXIAL TYPE N & SMA TERMIN ATIONS DC-12.4 GHz SERIES PCX CONDUCTION HEAT SINK COOLED PERFORMANCE SPECIFICATIONS: GENERAL INFORMATION: The PCX Series High Power Terminations are designed to dissipate RF power when mounted to a heat sink or chill plate. Power levels from 15 to 150 watts in 50 ohm impedance are available in units with type SMA or Type N connectors. High stability thin film resistive elements on

M30218

Abstract: 05B61
Contextual Info: n er me nd lop U e v de t Preliminary Specifications REV.A1 Description Mitsubishi microcomputers Specifications in this manual are tentative and subject to change. M30218 Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description The M30218 group of single-chip microcomputers are built using the high-performance silicon gate CMOS

M30218

Contextual Info: Mitsubishi microcomputers M30218 Group Description SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description The M30218 group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 100-pin plastic molded QFP. These

P216B

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: Mitsubishi single-chip microcomputer M30218 Group User’s manual tentative Specifications written in this user's manual are believed to be accurate, but are not guaranteed to be entirely free of error. Specifications in this manual may be changed for functional or performance improvements. Please make sure your manual is the latest edition.

Contextual Info: 050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s 050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

UP050CH101

Abstract: CE400 UP050B103 p050y ep050 UP050CH221 marking s350 dd0006 UP050CH220J
Contextual Info: T v - WU ' J — ' í7 H > x > 1í' AXIAL LEADED CERAMIC CAPACITORS OPERATING TEMP. -2 5 ~ + 8 5 °C L ' g S t 5 B ? o aq < 7 » í f c f r ' ñ J i É V1F£<, n % k ® & T y 7 , £ j* —.X feiÄ'J'' • C la s s 1 p n li[l]iS D S M i$ 'ttiS iE S t> ')i|> ^ IS ^ t4 < D S S ;'ib o B,

Contextual Info: HIGH POWER COAXIAL TYPE N & SMA TERMINATIONS DC-12.4 GHz P E R F O R M A N C E S P E C IF IC A T IO N S : GENERAL INFORMATION: The PCX Series High Power Terminations are designed to dissipate RF power when mounted to a heat sink or chill plate. Power levels trom 15 to 150 watts in 50 ohm im­

Contextual Info: 050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s 050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

CGHV96050F1

Contextual Info: 050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s 050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

M30218

Abstract: 05A31 DF0001
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

510300

Abstract: DSP56000 APR motorola 510300 DSP56000 DSP56300 DSP56301 DSP56302 DSP56303 08F4BD
Contextual Info: Freescale Semiconductor Rev. 0 , 4/16/99 by Phil Brewer 1 Introduction This application note describes how to interface external Asynchronous Fast Static Random Access Memory Fast SRAM to Motorola’s DSP56300 family of devices. This document is a supplement to the DSP56300 24-Bit Digital

510300

Abstract: motorola 510300 DSP56303PV80 DATA MANUALS HP2 800 243 DSP56000 DSP56300 DSP56301 DSP56302 DSP56303
Contextual Info: MOTOROLA Order by APR 25/D Motorola Order Number Rev. 0 , 4/16/99 Semiconductor Application Note by Phil Brewer 1 Introduction This application note describes how to interface external Asynchronous Fast Static Random Access Memory (Fast SRAM) to Motorola’s DSP56300 family of devices. This