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    057N08NS Search Results

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    057N08NS Price and Stock

    Infineon Technologies AG BSC057N08NS3GATMA1

    MOSFET N-CH 80V 16A/100A TDSON
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    DigiKey BSC057N08NS3GATMA1 Digi-Reel 5,711 1
    • 1 $2.19
    • 10 $1.581
    • 100 $2.19
    • 1000 $0.81181
    • 10000 $0.77269
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    BSC057N08NS3GATMA1 Cut Tape 5,711 1
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    • 10 $1.581
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    • 1000 $0.81181
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    BSC057N08NS3GATMA1 Reel 5,000 5,000
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    Avnet Americas BSC057N08NS3GATMA1 Reel 10,000 8 Weeks 5,000
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    Mouser Electronics BSC057N08NS3GATMA1 7,854
    • 1 $2.29
    • 10 $1.57
    • 100 $1.13
    • 1000 $0.773
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    Newark BSC057N08NS3GATMA1 Cut Tape 5
    • 1 $1.91
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    BSC057N08NS3GATMA1 Reel 5,000
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    Bristol Electronics BSC057N08NS3GATMA1 97
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    Rochester Electronics BSC057N08NS3GATMA1 62,694 1
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    Chip One Stop BSC057N08NS3GATMA1 Cut Tape 13,501 0 Weeks, 1 Days 1
    • 1 $0.621
    • 10 $0.619
    • 100 $0.617
    • 1000 $0.608
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    EBV Elektronik BSC057N08NS3GATMA1 5,000 9 Weeks 5,000
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    Vyrian BSC057N08NS3GATMA1 41,045
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    Win Source Electronics BSC057N08NS3GATMA1 25,610
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    • 100 $0.5704
    • 1000 $0.4416
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    Infineon Technologies AG BSC057N08NS3 G

    MOSFETs N-Ch 80V 100A TDSON-8 OptiMOS 3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BSC057N08NS3 G 6,364
    • 1 $2.09
    • 10 $1.51
    • 100 $1.2
    • 1000 $0.861
    • 10000 $0.811
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    Infineon Technologies AG BSC057N08NS3G

    MOSFET OPTIMOS 3 POWER-TRANISTOR, 80 V Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA BSC057N08NS3G 7,307
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    Chip 1 Exchange BSC057N08NS3G 35,070
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    Vyrian BSC057N08NS3G 11,748
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    Win Source Electronics BSC057N08NS3G 27,540
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    • 100 $0.5704
    • 1000 $0.4416
    • 10000 $0.4416
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    057N08NS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    057n08ns

    Abstract: BSC057N08NS3 057N08N IEC61249-2-21 JESD22 BSC057N08NS3 G DD40
    Text: 057N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max 5.7 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC057N08NS3 IEC61249-2-21 057N08NS 057n08ns 057N08N IEC61249-2-21 JESD22 BSC057N08NS3 G DD40 PDF

    057n08ns

    Abstract: 057N08N JESD22
    Text: 057N08NS3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS(on),max 5.7 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC057N08NS3 057N08NS 057n08ns 057N08N JESD22 PDF

    057n08ns

    Abstract: 057N08N
    Text: 057N08NS3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS(on),max 5.7 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC057N08NS3 057N08NS 057n08ns 057N08N PDF