diode hitachi schottky
Abstract: Hitachi DSA002711
Text: HSM107S Silicon Schottky Barrier Diode for System Protection ADE-208-058F Z Rev 6 Sep. 1998 Features • Low VF and high efficiency. • HSM107S which is interconnected in series configuration is designed for protection from not only external excessive voltage but also miss-operation on electric systems.
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HSM107S
ADE-208-058F
HSM107S
diode hitachi schottky
Hitachi DSA002711
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HSM107S
Abstract: IC safety circuite heating SC-59A Hitachi DSA00304
Text: HSM107S Silicon Schottky Barrier Diode for System Protection ADE-208-058F Z Rev 6 Sep. 1998 Features • Low VF and high efficiency. • HSM107S which is interconnected in series configuration is designed for protection from not only external excessive voltage but also miss-operation on electric systems.
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HSM107S
ADE-208-058F
HSM107S
IC safety circuite heating
SC-59A
Hitachi DSA00304
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HSM107S
Abstract: SC-59A Hitachi DSA0047
Text: HSM107S Silicon Schottky Barrier Diode for System Protection ADE-208-058F Z Rev. 6 Sep. 1998 Features • Low VF and high efficiency. • HSM107S which is interconnected in series configuration is designed for protection from not only external excessive voltage but also miss-operation on electric systems.
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HSM107S
ADE-208-058F
HSM107S
SC-59A
Hitachi DSA0047
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Ronics Technology
Abstract: hs60 HS40 RTP-058F-03 touch less
Text: TOUCH SCREEN PRODUKT SPECIFICATIONS MODEL: RTP-058F-03 DATE: FEB.09.1999 RONICS TECHNOLOGY.,LTD 5,8” TOUCH SCREEN SPECIFICATION 1 General This document includes the specification of the 5,8” touch screen. This touch screen is 4 wire analog resistive type.
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RTP-058F-03
Ronics Technology
hs60
HS40
RTP-058F-03
touch less
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HSM107S
Abstract: No abstract text available
Text: HSM107S Silicon Schottky Barrier Diode for System Protection REJ03G0173-0700Z Previous: ADE-208-058F Rev.7.00 Jan.28.2004 Features • Low VF and high efficiency. • HSM107S which is interconnected in series configuration is designed for protection from not only
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HSM107S
REJ03G0173-0700Z
ADE-208-058F)
HSM107S
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Untitled
Abstract: No abstract text available
Text: HSM107S Silicon Schottky Barrier Diode for System Protection REJ03G0173-0700Z Previous: ADE-208-058F Rev.7.00 Jan.28.2004 Features • Low VF and high efficiency. • HSM107S which is interconnected in series configuration is designed for protection from not only
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HSM107S
REJ03G0173-0700Z
ADE-208-058F)
HSM107S
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S5 100 B112 MT RELAY
Abstract: CK 66 UL 94V-0 LCD sh 0357 94v-0 c225t F8212 panduit standoff RF based remote control robot circuit diagram of incubator D1148 burndy Y35 crimping tool manual
Text: ELECTRICAL SOLUTIONS A. System Overview Click on the logo above to go to www.panduit.com up to date product information find a local distributor technical information Section Index B1. Cable Ties A. System Overview B2. Cable Accessories B. Bundle B3. Stainless
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SA-NCCB51
S5 100 B112 MT RELAY
CK 66 UL 94V-0 LCD
sh 0357 94v-0
c225t
F8212
panduit standoff
RF based remote control robot
circuit diagram of incubator
D1148
burndy Y35 crimping tool manual
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KFG2G16Q2A
Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
Text: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFG2G16Q2A-DEBx)
KFH4G16Q2A-DEBx)
KFG2G16Q2A
KFH4G16Q2A
80x11
KFG2G16Q2A)
KFH4G16Q2A)
KFG2G16Q2A
0307h
0719h
63FBGA
KFG2G16
onenand
oneNand flash
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wm8994
Abstract: wm8994 register WM8994E 42750 microphone electret ecm 4f wm8994 LAYOUT GUIDE FLL111 0748H 0738H GP2D
Text: w WM8994 Multi-Channel Audio Hub CODEC for Smartphones DESCRIPTION FEATURES The WM8994 is a highly integrated ultra-low power hi-fi CODEC designed for smartphones and other portable devices rich in multimedia features. • • • An integrated stereo class D/AB speaker driver and class W
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WM8994
wm8994 register
WM8994E
42750
microphone electret ecm 4f
wm8994 LAYOUT GUIDE
FLL111
0748H
0738H
GP2D
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TSP50C04
Abstract: BD 4914 MX 0541 TSP5220 TSP50C12 BA 59 04AF P DAC 0804 interfacing DAC with 0830 microprocessor LCD 16PIN mozart
Text: TSP50C0x/1x Family Speech Synthesizer Design Manual 2000 Linear Products SPSS011D IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information
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TSP50C0x/1x
SPSS011D
TSP50C04
BD 4914
MX 0541
TSP5220
TSP50C12
BA 59 04AF P
DAC 0804
interfacing DAC with 0830 microprocessor
LCD 16PIN
mozart
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05f0
Abstract: 16C54 AN511 PIC16C5X pla 007a P21A
Text: AN511 PLD Replacement Author: Sumit Mitra Microchip Technology, Inc. exclusive .OR. and one .AND. operation will be required. For example, to determine product term P3 = A3.A2.A1.A0, the expression to evaluate is: (A7:A0 .XOR. xxxx0011b) .AND. 00001111b).
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AN511
xxxx0011b)
00001111b)
PIC16C5X
12-bit]
05f0
16C54
AN511
pla 007a
P21A
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Untitled
Abstract: No abstract text available
Text: ESM T F25L16PA 2S Flash ̈ 16 Mbit Serial Flash Memory with Dual FEATURES „ Single supply voltage 2.7~3.6V „ Standard and Dual „ Speed - Read max frequency: 50MHz - Fast Read max frequency: 50MHz / 86MHz / 100MHz - Fast Read Dual max frequency: 50MHz / 86MHz / 100MHz
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F25L16PA
50MHz
50MHz
86MHz
100MHz
100MHz
172MHz
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SA452
Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this
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Am29LV2562M
S29GL512N
S29GL512N
SA452
SA336
SA424
120R
SA487
EE8000
a78000a7ffff
c58000c5ffff
SA4871
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Untitled
Abstract: No abstract text available
Text: ESM T F25L32QA 2S Flash ̈ 32 Mbit Serial Flash Memory with Dual and Quad FEATURES „ „ Single supply voltage 2.65~3.6V Standard, Dual and Quad SPI „ Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz / 86MHz / 104MHz - Fast Read Dual/Quad max frequency: 50MHz / 86MHz /
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F25L32QA
33MHz
50MHz
86MHz
104MHz
100MHz
172MHz
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4GB MLC NAND
Abstract: SAMSUNG NAND Flash MLC
Text: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) Preliminary FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFM2G16Q2M-DEBx)
KFN4G16Q2M-DEBx)
KFM2G16Q2M
KFN4G16Q2M
80x11
KFM2G16Q2M)
KFN4G16Q2M)
4GB MLC NAND
SAMSUNG NAND Flash MLC
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24co1
Abstract: LM7805T LM7805-TO92 LM7805-TO application notes CS5460 15 1e75 cs 13 02902 MT2113-ND TRANS-2102 CSE187-L
Text: AN220 Watt-Hour Meter using PIC16C923 and CS5460 FIGURE 1: Authors: WATT-HOUR METER Brett Duane, Stephen Humberd Microchip Technology Inc. OVERVIEW This application note shows how to use a PIC16C923 microcontroller to control operation of the CS5460 power measurement integrated circuit from Cirrus
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AN220
PIC16C923
CS5460
PIC16C923
24C01
CS5460.
CS5460
24C01
24co1
LM7805T
LM7805-TO92
LM7805-TO
application notes CS5460
15 1e75
cs 13 02902
MT2113-ND
TRANS-2102
CSE187-L
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Spansion S29GL512N11
Abstract: No abstract text available
Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages
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S29GLxxxN
S29GL512N,
S29GL256N,
S29GL128N
128-word/256-byte
8-word/16-byte
S29GLxxxN
27631sb2
Spansion S29GL512N11
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asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
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S29GL-M
S29GL256MS29GL128MS29GL064MS29GL032M
S29GL128MS29GL128N
S29GL256MS29GL256N
S29GLxxxN
00-B-5
S29GL032M
LAA064
asme SA388
gl128m
A2113
S29GL256
E78000
S29GL128N
TSOP56 S29GL128N
sa32sa35
S29GLxxxM
BGA-63
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FAA064
Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N
Text: S29GL-N MirrorBit Flash Family with Alternative BGA Layout S29GL256N, S29GL128N 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29GL-N
S29GL256N,
S29GL128N
S29GL-N
FAA064
SPANSION S29GL128
S29GL128
S29GL-P
GL128N
GL256N
S29GL128N
S29GL256N
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Untitled
Abstract: No abstract text available
Text: w WM1811A Multi-Channel Audio Hub CODEC for Smartphones DESCRIPTION FEATURES The WM1811A[1] is a highly integrated ultra-low power hi-fi CODEC designed for smartphones and other portable devices rich in multimedia features. • An integrated stereo Class D speaker driver and Class W
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WM1811A
WM1811A
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120R
Abstract: C8800
Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV2562M
120R
C8800
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feme rele
Abstract: d27c1001 S3 TRIO 64 feme ft a 002 30 01
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION T h e ¿IP D 78P 058F Y is a n E lectro M ag netic Interfac e E M I n oise red uctio n versio n of th e ¿/PD 78P058Y. T h e /iP D 7 8 P 0 5 8 F Y is a m em ber of th e ¿¿058FY S u b se rie s of th e 78K /0 S e rie s, in w hich th e on-chip m ask
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uPD78P058FY
uPD78P058Y
PD78058FY
gPD78P058FY
feme rele
d27c1001
S3 TRIO 64
feme ft a 002 30 01
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Untitled
Abstract: No abstract text available
Text: HSM107S Silicon Schottky Barrier Diode for System Protection HITACHI ADE-208-058F Z Rev 6 Sep. 1998 Features • Low V Fand high efficiency. • HSM107S which is interconnected in series configuration is designed for protection from not only external excessive voltage but also miss-operation on electric systems.
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HSM107S
ADE-208-058F
HSM107S
200pF,
SC-59A
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MSTAR 901
Abstract: MSTAR 828 dic a700 stk 795 821 GE 8352 MSTAR 309 108 046f 864F 5252 F 0921 XD 5252 F
Text: fig-FORTH FOR PACE ASSEMBLY SOURCE LISTIN G RELEASE 1 WITH COMPILER SECURITY AND VARIABLE LENGTH NAMES MAY 1979 This public domain publication is provided through the courtesy of the Forth Interest Group, P .O . Box 1105, San Carlos, CA 94070. Further distribution must include this notice.
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