Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC T3 D • 05QM33Ö Ü003723 Ö ■ T -9 1-0 1 PR O CESS SRB Process SRB PNP Darlington Transistor Process S R B is a double-diffused silicon epitaxial P N P Darlington pair. This device is designed for use as a high-gain amplifier in audio and control circuits
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Q50M33Ã
T-91-01
T-91-01
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TAG 9101
Abstract: No abstract text available
Text: AL LE GR O M I C R O S Y S T E M S INC T3 D • 05QM33fi 0 0 0 3 7 6 4 b ■ ALGR T-91-01 PROCESS TRB Process TRB Medium-Speed Switching Diode Process T R B produces a non-gold-doped silicon epitaxial diode designed as a low-leakage, mediumspeed switching device. It has a typical breakdown
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DSDM33Ã
T-91-01
Vo-20V
/25C1
TAG 9101
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY ISSUE 8187 Subject to chanos without notic } Januarv 12 1995 Designed specifically to meet the requirement for extended opera tion of battery-powered equipment such as cordless and cellular telephones, the A8187SLT voltage regulator offers the reduced dropout
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A8187SLT
05QM33fi
MA-009-3
000bL
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION subject to change without notice July?, 1998 Suffix '-L T ' & '-UA* Pinning CHOPPER-STABILIZED, PRECISION HALL-EFFECT SWITCH The A3240—Hall-effect switch is an extremely temperature-stable and stress-resistant sensor especially suited for operation over extended tempera
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A3240â
MH-014D
014Dmm
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