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    05B DIODE Search Results

    05B DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    05B DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DSD0.8-05B Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage500 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)3.0


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    8-05B Voltage500 Time300n PDF

    DIODE T4 3560

    Abstract: T4 3560 B ixys VBH 40-05B T4 3560 6 diode bridge 2170
    Text: VBH 40-05B Module with HiPerFETTM H-Bridge and Single Phase Mains Rectifier Bridge VDSS = 500 V RDSon = 116 m Ω VRRM = 1200 V IDAV25 = 90 A Preliminary data pin configuration see outlines Application Symbol Conditions Maximum Ratings VRRM 1200 V 45 33 A A


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    40-05B IDAV25 IFAV25 IFAV80 DIODE T4 3560 T4 3560 B ixys VBH 40-05B T4 3560 6 diode bridge 2170 PDF

    ixys VBH 40-05B

    Abstract: mosfet induction heater D-68623 T4 3560 80c40
    Text: VBH 40-05B Module with HiPerFETTM H-Bridge and Single Phase Mains Rectifier Bridge VDSS = 500 V Ω RDSon = 116 mΩ Preliminary VRRM = 1200 V IDAV25 = 90 A Mains Rectifier Bridge D1 - D4 Application Symbol Conditions Maximum Ratings VRRM 1200 V 45 33 A A


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    40-05B IDAV25 IFAV25 IFAV80 B25/100 ixys VBH 40-05B mosfet induction heater D-68623 T4 3560 80c40 PDF

    GSC78L05

    Abstract: No abstract text available
    Text: ISSUED DATE :2004/02/18 REVISED DATE :2004/10/05B GSC78L05 Description The GSC78L05 of surface mount device regulator is easy-to-use device suitable for multitude of applications that require a regulated supply of up to 100mA. The regulator feature internal current limiting and thermal shutdown making them remarkably rugged. No external


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    2004/10/05B GSC78L05 GSC78L05 100mA. PDF

    5SGS 12F2500

    Abstract: ABB Typ RGC ITGQM GTO thyristor ABB
    Text: 5SGS 12F2500  5SGS 12F2500 Old part no. TG 908-1200-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 200 I TAVm = 630


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    12F2500 1768/138a, TG/164/05b Mar-12 5SGS 12F2500 ABB Typ RGC ITGQM GTO thyristor ABB PDF

    UDT26A05

    Abstract: No abstract text available
    Text: UDT26A05L05 DESCRIPTION UDT26A05L05 are surge rated diode arrays designed to protect high speed data interfaces.This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by electrostatic discharge ESD ,electrical fast transients (EFT),


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    UDT26A05L05 UDT26A05L05 IEC61000-4-2 OT-26 MIL-883E 15-Sep-11 UDT26A05 PDF

    udt26a05l05

    Abstract: No abstract text available
    Text: UDT26A05L05 DESCRIPTION UDT26A05L05 are surge rated diode arrays designed to protect high speed data interfaces.This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by electrostatic discharge ESD ,electrical fast transients (EFT),


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    UDT26A05L05 UDT26A05L05 IEC61000-4-2 OT23-6L MIL-883E 07-Mar-12 PDF

    diagram of high frequency pvc welding machine

    Abstract: IM08-1B5PS-ZC1 CM30-16BPP-KC1 CM18-12NPP-KC1 IQ10-03BPS-KT1 sensor IM18-08BPS-ZC1 SICK MAKE IM08-1B5PS-ZT1 IM08-1B5PS-ZWK IM04-0B6PS-ZU1 zck m1
    Text: C a t a l o g u e SICK Sensors for Automation I n d u c t i v e Pro x i m i t y S e n s o r s • C a p a c i t i v e Pro x i m i t y S e n s o r s M a g n e t i c P ro x i m i t y S e n s o r s • M a g n e t i c C y l i n d e r S e n s o r s Contents Glossary


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    PDF

    UDT26A05L05

    Abstract: .B 05B B05B UDT26A05L
    Text: UDT26A05L05 Brightking's UDT26A05L05 are low capacitance TVS arrays designed to protect ! " # $ ! # ! &' # $ # &# % &* ' # ! $ % % $ & () ! (" + *' % % ' "(" , ! -./0 " The UDT26A05L05 will meet the immunity requirement of IEC61000. Level 4. '- 4 ) 54 ("


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    UDT26A05L05 UDT26A05L05 IEC61000. IEC61000-4-2 299C- 299C7 .B 05B B05B UDT26A05L PDF

    varistor svc 221 14

    Abstract: No abstract text available
    Text: CERAMIC SURGE ABSORBERS VARISTORS SVC DIMENSIONS (U nit : mm) Straight Type Forming Type B TYPE TYPE T L’ H L F SVC 180D-068 SVC220D-05B SVC2j0D-O63 SVC330D-05B 4,5 4.5 4.5 4.5 1 7±1 1.7x1 1.71 1 1 ?± 1 7.5 7.5 7.5 75 10.0 10.0 10.0 10.0 25 25 25 25


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    SVCS200-07A SVC101D-07A 2iD-07A 180D-068 SVC220D-05B SVC2j0D-O63 SVC330D-05B SVC390D-05B SVC470D-05B SVC560D-C5B varistor svc 221 14 PDF

    Untitled

    Abstract: No abstract text available
    Text: • fl235b05 D D A1 57 5 05b I SIEMENS PROFET B T S 4 1 0 F 2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • Overload protection


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    fl235b05 BTS410F2 6235b05 PDF

    Untitled

    Abstract: No abstract text available
    Text: International Is ] Rectifier 4055452 0015530 INR PD-9458C IRFP450 INTERNATIONAL HEXFET® P o w e r M O S F E T • • • • • • 05b bSE RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling


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    PD-9458C IRFP450 PDF

    0DQ154Q

    Abstract: No abstract text available
    Text: MbflbSEb 0DQ154Q 05b B I X Y □IXYS K3BT with Diode IXSN50N120AU1 C25 V CES High Short Circuit SOA Capability CE sat = 75 A = 1200 V = 3.7 V 2 O Preliminary data (09/93) J W ) Symbol Test Conditions v CE8 Tj = 25‘ C to 150'C 1200 V V«* Tj = 25'C to 150'C; R ^ = 1 M il


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    0DQ154Q IXSN50N120AU1 OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON iW VND05BSP DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA . . . . . . . TYP E V dss R dS c V N D 05B 40 V 0 . 2 Î2 In D Vcc 1.6 A 26 V OUTPUT CURRENT (CONTINUOUS : 9 A @ Tc=85°C PER CHANNEL 5V LOGIC LEVEL COMPATIBLE INPUT


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    VND05BSP VND05BSP PDF

    Untitled

    Abstract: No abstract text available
    Text: ULTRA BRIGHT RED SOLID STATE LAMPS MEMUM TPRÖFILE 4.60 FLANGELESS „ LITEm LTL-10263W TAIWAN LI TON ELECTRONIC 4 ^ E j> flfl3Sfa«?5 0003431 05b • T L I T FEATURES • • • • • U L T R A BRIGHTNESS. NEW S T U R D Y LEADS. 1C CO M PATIBLE/LO W CURRENT


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    LTL-10263W LTL-10263W 0263W PDF

    DIODE DO-220

    Abstract: LS 373
    Text: SbE ]> • 7 ^ 2 ^ 23 7 G O m a i E r z 7 SCS-THOMSON Ä 7# 05b ■ S G T H s 6 S- 0"S0N T-03-I7 D^flD In]©l[L[l©Tr[n] s [MD(OÌ B Y T 0 8 P -1 0 0 0 A FAST RECOVERY RECTIFIER DIODE ■ VERY HIGH REVERSE VOLTAGE CAPA­ BILITY ■ VERY LOW REVERSE RECOVERY TIME


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    7TET237 08P-1000A 12jiH 100cm 7c12tà MCIS0I11USCTIB0CJOCS DIODE DO-220 LS 373 PDF

    siemens igbt BSM 150 gb 100 d

    Abstract: siemens igbt BSM 150 Gb 160 d siemens igbt BSM 100 gb DDMS677 GG45 SIEMENS VF 100 200AH tt200a
    Text: bOE D • fl23Sfc.QS G G 4 5 Ô 7 2 05b « S I E G SIEMENS S IE H E N S A K T IE N 6 E S E L L S C H A F T ' & ' - a f BSM 100 GB 100 D BSM100 GAL 100 D IGBT Module Preliminary Data v CE = 1000 v / c = 2 x 1 3 5 A at Tc = 2 5 C I c = 2 x 100 A at r c = 80 C


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    23SLGS 2x135 BSM100 C67076-A2103-A2 C67076-A2004-A2 siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d siemens igbt BSM 100 gb DDMS677 GG45 SIEMENS VF 100 200AH tt200a PDF

    varistor ENC series ENC471

    Abstract: varistor ENC 471 ENC431 varistor ENC series enc471 ENC221 vaRistor ENC271 VARISTOR enc431 varistor ENC241 VARISTOR ENC431D-14A
    Text: FUJI Z-TRAP ENC SERIES Transient Suppressors General description FUJI'S ceramic surge absorbers are designed to protect low voltage electronic devices such as semiconductors from the effects of destructive voltage transients. The Z-TRAP ENC series are widely used


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    --14A varistor ENC series ENC471 varistor ENC 471 ENC431 varistor ENC series enc471 ENC221 vaRistor ENC271 VARISTOR enc431 varistor ENC241 VARISTOR ENC431D-14A PDF

    SAMWHA RG

    Abstract: SVC4710-20A SVC4710-14A varistor svc 471 14 SVC471014A varistor SVC 471 10 SVC 471 14 varistor Z 500 ps VARISTOR 275 LA 20A SVC 471 10
    Text: SVC Varistors Type Introduction SVC series Varistors are gapless ceramic surge absorbers of a new type made of metal oxide which is designed to protect various kinds of electronic devices and semiconducting elements from surges. Features • High discharge current capability up to 4000 Amps.


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    50/60Hz SAMWHA RG SVC4710-20A SVC4710-14A varistor svc 471 14 SVC471014A varistor SVC 471 10 SVC 471 14 varistor Z 500 ps VARISTOR 275 LA 20A SVC 471 10 PDF

    hitachi rectifier U05B

    Abstract: U05E Diode U05B U05B U05C U05G U05J 1S2455 diode 2458 V180
    Text: T TYPE •FEATURES UP TO 800V 4.0A RMS DIODE OUTLINE DRAWING • Optimum to serve as power supply rectifier for general apparatus, especially for large-sized color television sets, video tape recorders and stereo equipments. 1.2 • Employing Hitachi's unique glass encapsulation


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    U05Brd 10msec 10msec, hitachi rectifier U05B U05E Diode U05B U05B U05C U05G U05J 1S2455 diode 2458 V180 PDF

    Untitled

    Abstract: No abstract text available
    Text: sem ikrdn V rsm Ifrm s m a xim u m valu e for continuous operation V r rm 400 A Ifa v (sin. 180; Tcass = 85 °C; 50 Hz) SKKD 170 M 170 A V 1500 SKKD 170 M 15 1700 SKKD 170 M 17 1900 SKKD 170 M 19 2400 SKKD 170 M 24 Symbol Conditions SEMIPACK 3 Fast Diode Modules


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    KD170Mt5 KD170M4? KD17QM17 KD170M19 KD170M1S PDF

    SLR-34VR

    Abstract: SLR34VR SLR34MG SLR-34MG SLR-34 SLR34VC 34DU SLR34YY SLR-34YY SLR-34MC
    Text: • □ [107354 ITT ■ RHN K /L ig h t Emitting Diodes -f Q| p *% A !■ ■ ■ " O " » SLR-34 Series $ 3.1mm Small-Sized Reflecting Lamps S e r ie s • il-J fN 'jill/D im ension s Unit : mm) S L R -3 4 -> ') - X l i , £ S ffl b , ± 11 4 m J f f t - t 1C $ Bb U tz i l Iffl W 4'


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    SLR-34 Fi9-25 00073bD SLR-34VR SLR34VR SLR34MG SLR-34MG SLR34VC 34DU SLR34YY SLR-34YY SLR-34MC PDF

    varistor SVC 471 14

    Abstract: SVC5610-14A 561D20 SVC561D-10A 220D14 varistor SVC 471 10 270D10 220d10 471D10 201D10
    Text: SVC Varistors Type Introduction SVC series Varistors are gapless ceramic surge absorbers of a new type made of metal oxide which is designed to protect various kinds of electronic devices and semiconducting elements from surges. Features • High discharge current capability up to 4000 Amps.


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    D-14A 010mm, 014mm, 50/60Hz 8/20us varistor SVC 471 14 SVC5610-14A 561D20 SVC561D-10A 220D14 varistor SVC 471 10 270D10 220d10 471D10 201D10 PDF

    OPC216

    Abstract: No abstract text available
    Text: 0OPTEK P roduct B ulletin OPC216 Ju ly 1996 GaAIAs Infrared Emitter Chip Type OPC216 .0171.43 . 01S(. i 8) DIMENSIONS HE IK IICHES(HILLIHETERS) P-S10E B im HETAL ALLOY CONTACT ENTIBE SURFACE Features A b so lu te M aximum Ratings*1' (Ta = 25° C unless otherwise noted)


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    OPC216 OPC216 OPC216VP OPC216TP 0QD273Q PDF