Untitled
Abstract: No abstract text available
Text: RF-13 Rev 05MAY14 SMA–P–C–H–ST–CA1 SMA–J–C–H–ST–BH1 SMA–J–C–H–ST–PN1 SMA–J–C–H–ST–S10 SMA-CA SERIES 50Ω SMA COMPONENTS SPECIFICATIONS For complete specifications and assembly instructions see www.samtec.com?SMA-CA
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RF-13
05MAY14)
-CA10
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Untitled
Abstract: No abstract text available
Text: Not for New Design 199 PEL-SI Vishay BCcomponents Aluminum Capacitors Power Economy Long Life Snap-In FEATURES • Polarized aluminum capacitors, non-solid electrolyte • Large types, very small dimensions, cylindrical aluminum case, insulated with a blue sleeve
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Original
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2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5484DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.016 at VGS = 4.5 V 12 VDS (V) 20 0.021 at VGS = 2.5 V • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Original
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Si5484DU
Si5484DU-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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Original
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Si5419DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: PATT www.vishay.com Vishay Dale Thin Film Precision Automotive High Temperature 155 °C at full rated power Thin Film Chip Resistor, AEC-Q200 Qualified FEATURES • Resistance range: 2.75 to 301 k • AEC-Q200 qualified, table 7F • AEC-Q200 qualified, ESD rated class 1C
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Original
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AEC-Q200
MIL-STD-202,
MIL-PRF-55342
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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J-STD-002
Abstract: ZGL41-100 ZGL41-110 ZGL41-200A DO-213AB VISHAY DO213AB VISHAY ZGL41
Text: ZGL41-100 thru ZGL41-200A Vishay General Semiconductor Surface Mount Glass Passivated Power Voltage-Regulating Diodes FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor
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Original
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ZGL41-100
ZGL41-200A
J-STD-020C,
DO-213AB
2002/95/EC
2002/96/EC
18-Jul-08
J-STD-002
ZGL41-110
ZGL41-200A
DO-213AB
VISHAY DO213AB
VISHAY ZGL41
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PDF
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Untitled
Abstract: No abstract text available
Text: P10L Vishay Sfernice Long Life Potentiometer - 500 000 Cycles Miniature - Cermet - Fully Sealed FEATURES • 500 000 cycles Cermet element Low temperature coefficient ± 150 ppm/°C typical Plastic housing and shaft Compact (3/8" square)
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Original
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2002/95/EC
P10LXX
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: P30L Vishay Sfernice Long Life Potentiometer - 2 Million Cycles Heavy Duty - Cermet Fully Sealed FEATURES • 2 million cycles High power rating 3 W at 70 °C Cermet element Low temperature coefficient ± 150 ppm/°C typical Custom designs on request
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Original
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2002/95/EC
P30LL
P30LLL:
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: V i s hay I n t e rt e ch n o l o g y, I n c . I INNOVAT AND TEC O L OGY P10L N HN POTENTIOMETERS O 19 62-2012 Resistors - Long Life of 500 000 Cycles Long-Life 500 000 Cycles Panel Potentiometer Key Benefits • • • • • • Long life of 500 000 cycles
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05-May-11
VMN-PT0121-1202
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PDF
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Untitled
Abstract: No abstract text available
Text: TLVB4200 Vishay Semiconductors Backlighting Blue LED, Ø 3 mm Tinted Non-Diffused Package FEATURES 19231 DESCRIPTION The TLVB4200 series was developed for backlighting. Due to its special shape the spatial distribution of the radiation is qualified for backlighting.
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Original
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TLVB4200
2002/95/EC
2002/96/EC
TLVB4200
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: TLHF4600, TLHF4601 Vishay Semiconductors High Intensity LED in Ø 3 mm Tinted Diffused Package 19222 DESCRIPTION This device has been designed to meet the increasing demand for AlInGaP technology general indicating and lighting purposes. It is housed in a 3 mm diffused plastic package. The
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Original
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TLHF4600,
TLHF4601
2002/95/EC
2002/96/EC
11-Mar-11
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PDF
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SILICONIX MARKING si5999edu-t1-ge3
Abstract: No abstract text available
Text: Si5999EDU Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si5999EDU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SILICONIX MARKING si5999edu-t1-ge3
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PDF
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 1000 MHz 5.0 VDC 1000 MHz Tuning Voltage: Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +8.0 +10.0 +12.0 dBm 25 30 mA Supply Current:
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10kHz
100kHz
10MHz
CVCO55CX-1000-1000
05-May-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR640ADP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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Original
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SiR640ADP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: V20DL45-M3, V20DL45HM3 www.vishay.com Vishay General Semiconductor Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.31 V at IF = 5 A FEATURES TMBS eSMP® Series TO-263AC SMPD • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm
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Original
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V20DL45-M3,
V20DL45HM3
O-263AC
J-STD-020,
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5459DU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a -8 e -7.5 RDS(on) (Ω) 0.052 at VGS = -4.5 V 0.082 at VGS = -2.5 V -20 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested 8 • Material categorization:
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Original
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Si5459DU
Si5459DU-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5415EDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () (Max.) ID (A)a 0.0098 at VGS = - 4.5 V - 25 0.0114 at VGS = - 3.7 V - 25 0.0143 at VGS = - 2.5 V - 25 0.0250 at VGS = - 1.8 V -7 Qg (Typ.)
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Original
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Si5415EDU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: P10L Vishay Sfernice Long Life Potentiometer - 500 000 Cycles Miniature - Cermet - Fully Sealed FEATURES • 500 000 cycles Cermet element Low temperature coefficient ± 150 ppm/°C typical Plastic housing and shaft Compact (3/8" square)
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Original
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2002/95/EC
P10LXX
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: 123 SAL-A www.vishay.com Vishay BCcomponents Aluminum Capacitors Solid Axial FEATURES 123 SAL-A 128 SAL-RPM Radial higher CV/volume Fig. 1 QUICK REFERENCE DATA DESCRIPTION VALUE Maximum case size Ø D x L in mm 6.7 x 15.3 to 12.9 x 32.0 Rated capacitance range
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Original
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60384-4/EN130300
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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ACS 0865
Abstract: dale wvl
Text: WVL Vishay Dale Inductors, Variable, Subminiature, Shielded, Radial Leaded FEATURES • • • • • • • ELECTRICAL SPECIFICATIONS Adjustable Inductance Range: Tunable range; ± 5 % for 0.10 H to 1 μH. ± 10 % for 1.2 μH to 1000 μH Dielectic Strength: 840 VRMS at sea level
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Original
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2002/95/EC
11-Mar-11
ACS 0865
dale wvl
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PDF
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TLHG440
Abstract: TLHG4400 TLHG4401 TLHP4401
Text: TLHG440., TLHO440., TLHP440., TLHR440., TLHY440. Vishay Semiconductors High Efficiency LED in Ø 3 mm Tinted Diffused Package FEATURES • Standard Ø 3 T-1 package • Small mechanical tolerances • Suitable for DC and high peak current • Wide viewing angle
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Original
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TLHG440.
TLHO440.
TLHP440.
TLHR440.
TLHY440.
2002/95/EC
2002/96/EC
11-Mar-11
TLHG440
TLHG4400
TLHG4401
TLHP4401
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PDF
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1437006-4
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 6 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST R E VIS IO N S GP 0 0 LTR A DESCRIPTION DATE DWN HMR cv 05MAY1 0 REVISED PER ECO-10 - 0 0 9 2 9 6 APVD 1A MATERIAL: HOUSING AND COVER: GLASS-REINFORCED POLYESTER, UL 94-VO,
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OCR Scan
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ECO-10
05MAY1
94-VO,
050CT06
31MAR2000
1437006-4
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G S 3 U N P U B L IS H E D . REUEASED FO R AUU C O P Y R IG H T By 2 P U B U IC A T IO N R IG H TS REVISIO N S 50 RESERVED. - LTR D E S C R IP T IO N P3 REVISED PER DATE DWN A PVD 05MAY11 HMR KR ECR-11-009033 CONTINUOUS STRIP ON REEL.
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OCR Scan
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ECR-11-009033
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PDF
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Untitled
Abstract: No abstract text available
Text: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL 2 P U B L IC A T IO N R IG H TS LOC D IS T R E V IS IO N S RESERVED. C O P Y R IG H T D E S C R IP T IO N J R EVISED PER DWN ECR-11-002363 1 05MAY1 A PVD TT D D ;±iS NOTE 1 MA T E R I A L i G L A S S
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ECR-11-002363
05MAY1
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PDF
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