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    Lin Engineering BL17E40-01D-05RO

    BLDC MOTOR WITH ENCODER
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    DigiKey BL17E40-01D-05RO Bulk 24 1
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    Newark BL17E40-01D-05RO Bulk 11 1
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    Lin Engineering BL23E22-02D-05RO

    BLDC MOTOR WITH ENCODER
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    DigiKey BL23E22-02D-05RO Bulk 11 1
    • 1 $222.44
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    Newark BL23E22-02D-05RO Bulk 16 1
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    Lin Engineering BL34E34-01D-05RO

    BLDC MOTOR WITH ENCODER
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    DigiKey BL34E34-01D-05RO Bulk 8 1
    • 1 $383.79
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    Newark BL34E34-01D-05RO Bulk 5 1
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    TE Connectivity Y1505RO

    ANT YAGI 150-174MHZ ALUM GOLD NF
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    Amphenol Corporation PTC10YH01-473A2020-5RO

    Trimmer Resistors - Through Hole 10mm cermet through hole potentiometer 0,33W Horizontal adjust resistive value 47K Ohm Linear taper tolerance 20% w/knob red
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    Mouser Electronics PTC10YH01-473A2020-5RO
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    05RO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tld 82c

    Abstract: lm317to220abh POL-100UF 74HCT245 HFBR5207 HFBR-5207 LM317 PM5355 VSC8110 1H-10
    Text: PMC-Sierra, Inc. REFERENCE DESIGN ISSUE 3 PM5355 S/UNI-622 SATURN USER NETWORK INTERFACE PM5355 S/UNITM 622 S/UNI-622 ATM Reference Design with Multimode Optics Preliminary Information Issue 3: October 11, 1996 PMC-Sierra, Inc. 105-8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 415 6000


    Original
    PDF PM5355 S/UNI-622 PM5355 S/UNI-622TM PMC-950860 tld 82c lm317to220abh POL-100UF 74HCT245 HFBR5207 HFBR-5207 LM317 VSC8110 1H-10

    Untitled

    Abstract: No abstract text available
    Text: MH8S64AALD-8 536870912-BiT 8388608-WQRD BY 64-BIT SynchronousDRAM DESCRIPTION Trie MH8S64AALD is 8388608-word by 64-bit Synchronous DRAM module. This consists of eight industry standard 8Mx8 Synchronous DRAMs in TSDP and one industory standard EEPROM in SOP.


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    PDF MH8S64AALD-8 536870912-BiT 8388608-WQRD 64-BIT MH8S64AALD 8388608-word 94pin 10pin 85pin

    Untitled

    Abstract: No abstract text available
    Text: DM74ALS563A Octal D-Type Transparent Latch with TRI-STATE Output General Description These 8-bit registers feature totem-pole TRI-STATE outputs designed specifically for driving highly-capacitive or relative­ ly low-impedance loads. The high-impedance state and in­


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    PDF DM74ALS563A ALS563A

    TA7318P

    Abstract: LC7555 TA7318 ic 7556 LA 7556 lt 7244 a 7556 ic lc7555.7556
    Text: NO. 724C -Z L -X 2188 *$.$, D 9 D y HaC724A '84MOS >' > Y ~f v 9 Na724B t ? Lil'À. X <ti 5 v>. "V L C 7 •7 “ ^ 5 t 5 5 , 7 5 5 6 - t _ ^ _ ;U K 7 ^ <^>tf — ¡7 * — A' K y — , / Í7 - 7 V 7*Otf — — 1 —$t<7>u ;uy —^ ^ • K^ . C ^ •« f f i F « 23V a i ^


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    PDF NftC724A( 84MOS Na724B) LC7555 DIP42 i926-7kBz 50mseocoi# 22QKO TA7318P TA7318 ic 7556 LA 7556 lt 7244 a 7556 ic lc7555.7556

    1AMC

    Abstract: Y503 MI44
    Text: INTEGRATE» DEVICE. T? 4 8 2 5 77 1 INTEGRATED DEVICE 97D O 191 8 16 x 16-BIT PARALLEL CMOS MULTIPLIERS i l i H ' D e | 4ñBS?71 OODnifl □ 'O "T- 9 S - Ô Z IDT7216L IDT7217L W Integrated DeviceTêchnology. Inc. FEATURES: DESCRIPTION: • 1 6 x1 6 parallel multiplier with double precision product


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    PDF 2S771 16-BIT IDT7216L IDT7217L 16x16 l20mA MPY016H/K Am29516 1AMC Y503 MI44

    HM62W256

    Abstract: No abstract text available
    Text: HM62W256 Series 32,768-word x 8-bit Low Voltage Operation CMOS Static RAM HITACHI ADE-203-084G Z Rev. 7.0 Jun. 19, 1995 Features • Low voltage operation SRAM Operating Supply Voltage: 3.0 V to 3.6 V • 0.8 (J.m Hi-CMOS process • High speed Access time: 55/70/85 ns (max)


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    PDF HM62W256 768-word ADE-203-084G HM62W256LFP-7T HM62W256LFP-5SLT HM62W256LFP-7SLT HM62W256LFP-8SLT HM62W256LFP-7ULT HM62W256LT-7 HM62W256LT-7SL

    Untitled

    Abstract: No abstract text available
    Text: SSI 32R2103R/04R/05R M m J y s lm . 8/10 Channel Thin Film Read/Write Devices A Texas Instruments Company June 1996 DESCRIPTION FEATURES The SSI 32R2103R/04R/05R are BiCMOS monolithic integrated circuits designed for use with two-terminal recording heads. They provide a low noise read


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    PDF 32R2103R/04R/05R 32R2103R/04R/05R 32R2103R/04R/05Roption 32R2103/04/05 32R2103W-8CGT.