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    05T TRANSISTOR Search Results

    05T TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    05T TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    VIcor 22400

    Abstract: PC10 PC11 PR11
    Text: 45 PAC Features Description • Enhances performance of parallel converter arrays The Phased Array Controller PAC integrated circuit enhances the performance of large power sharing arrays of modular DC-DC converters. This device is intended for processing load


    Original     		7/00/10M VIcor 22400 PC10 PC11 PR11 PDF

    Untitled

    Abstract: No abstract text available
    Text: 45 PAC Features Description • Enhances performance of parallel converter arrays The Phased Array Controller PAC integrated circuit enhances the performance of large power sharing arrays of modular DC-DC converters. This device is intended for processing load


    Original     		1/02/10M PDF

    VIcor 22400

    Abstract: No abstract text available
    Text: PAC Phased Array Controller Part number 19077 Features Description • Enhances performance of parallel converter arrays The Phased Array Controller PAC integrated circuit enhances the performance of large power sharing arrays of modular DC-DC converters. This device is intended for processing load


    Original     		PDF

    S0151

    Abstract: No abstract text available
    Text: am im m R F P ro du cts M ic m s e m m 140 Commerce Drive Montgomeryviile. PA 18936-1013 Tel: {215 631-9840 i pfO§f8£s> S D 1 5 1 1-8 RF & MICROWAVE TRANSISTORS UHF PULSE POWER COMMON EMITTER 12W T Y P IC A L C W 15W TYPICAL PULSED GOLD METALLIZATION m


    OCR Scan     		SD1511-8 s45/e S0151 PDF

    DM54LS126AJ

    Abstract: No abstract text available
    Text: NATIONAL SEMICOND {LOGIC} fit. D e'H b S G l i a e □05t>3ci3 4 DM54LS126A/DM74LS126A Quad TRI-STATE Buffers output transistors are turned off presenting a high-impedance state to the bus line. Thus the output will act neither as a significant load nor as a driver. To minimize the possibility


    OCR Scan     		b5Dil55 DM54LS126A/DM74LS126A DM54LS126AJ PDF

    BDX42

    Abstract: No abstract text available
    Text: J V BDX42 BDX43 BDX44 N-P-N SILICON PLANAR DARLINGTON TRANSISTORS Silicon n-p-n planar Darlington transistors fo r industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a TO-126 plastic envelope with collector connected


    OCR Scan     		BDX42 BDX43 BDX44 O-126 BDX45, BDX46 BDX47 BDX42 PDF

    2N2894A

    Abstract: TRANSISTOR LC80 ic 741 by philips 7ZS6554
    Text: PHILIPS INTERNATIONAL SbE D • 711DflSb O O M S b m 2N2894A Data sheet status Preliminary specification date of issue December 1990 2fl7 ■ P H I N "F3S-C7 Silicon switching transistor Q U IC K R E F E R E N C E DATA UNIT M AX. MIN. CONDITIONS PARAM ETER


    OCR Scan     		711DflSb 0042L 2N2894A PINNING-TO-18 2N2894A T-35-07 TRANSISTOR LC80 ic 741 by philips 7ZS6554 PDF

    2SC400

    Abstract: 8S040 Produced by Perfect Crystal Device Technology 2SC400 M
    Text: 400 2SC 5 / U D > N P N X t :^ 2 / ^ W B h 5 > y ^ P C T Ä Ä SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS) mmmcmuRj o o ' f * i-'srm o H ig h F re q u e n c y ° H ig h Sp eed • h •? -y ^ . m A m p lifie r S w itc h in g y • v 1- y • * 4 •


    OCR Scan     		300ns 8SA300 28A500 50MHz 2SC400 5011Hz 2SC400 8S040 Produced by Perfect Crystal Device Technology 2SC400 M PDF

    Microt

    Abstract: MMCM930 MMCM2484 MMT2484 MMT930
    Text: MMCM930, MMT930 SILICON MMCM2484, MMT2484 MICRO-T NPN SILICON ANNULAR TRANSISTORS NPN SILICON AMPLIFIER TRANSISTORS . . . designed for low-level, low noise am plifier applications. • MMT Plastic M icro -T • MMCM Hermetic Ceramic M icro-T • Space Saving M icro-M iniature Packages


    OCR Scan     		MMCM930, MMT930 MMCM2484, MMT2484 MMT930, MMCM930) MMT2484, MMCM2484) MMT2484 Microt MMCM930 MMCM2484 MMT930 PDF

    IB204

    Abstract: 2SB942 2SB942A 2SD1267 2SD1267A
    Text: Power T ransistors 2SB942, 2SB 942A 2SB942, 2SB942A Silicon PNP Epitaxial Planar Type P ackage Dim ensions. AF Pow er Am plifier Com plem entary Pair with 2 S D 1 2 6 7 , 2 S D 1 2 6 7 A U nit ! mm 4.4iriax. 10.2max. 2.9 max. • Features • High DC current gain Ii f e and good linearity


    OCR Scan     		2SB942, 2SB942A 2SD1267, 2SD1267A 2SB942 2SB942A IB204 2SD1267 2SD1267A PDF

    SPW-500-S

    Abstract: No abstract text available
    Text: 6DI30A-12CH30A M i N ' i i : Outline Drawings POWER TRANSISTOR MODULE : Features ì • 7 V —4*4 }) # 4 =t— Kl*3j0E Including Free Wheeling Dipde • hFE^ftv.' High DC Current Gain Insulated Type È * » ta ,ia I» ii »a[7 TiblrP*l*rmin»i* AMPMe. Î


    OCR Scan     		6DI30A-12CH30A) E82988 4i-i23i I95t/R89 5hl50 SPW-500-S PDF

    mst 702 lf

    Abstract: BUK995-60A
    Text: Philips Com ponents Data sheet Preliminary specif ication status date of issue March 1991 90 BUK995-60A PowerMOS transistor Logic Level SensorFET SbE ]> P H I L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power


    OCR Scan     		OT263 BUK995-60A 711QfiEb 004M7LS BUK995-60A mst 702 lf PDF

    BFG32

    Abstract: No abstract text available
    Text: P h ilip s Sem iconductors b b SB ^ B l O O B im b 7^5 • Product specification APX £ PNP 5 GHz wideband transistor BFG32 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in


    OCR Scan     		BFG32 OT103 BFG96. BFG32 PDF

    Untitled

    Abstract: No abstract text available
    Text: E' M Wha% H EWLETT K PACKARD Avantek Products Surface Mount Cascadable Amplifier 6 to 18 GHz Technical Data PPA-18632 Features Description Pin Configuration • Frequency Range: 6 to 18 GHz The PPA-18632 is two-stage GaAs FET RF amplifier in a 0.25 in. square package. Internal blocking


    OCR Scan     		PPA-18632 PPA-18632 PP-25 4447SA4 PDF

    Untitled

    Abstract: No abstract text available
    Text: ASSP DUAL REVERSIBLE MOTOR DRIVER MB3863 • DESCRIPTION The MB3863 is an 1C motor driver with two independent reverse control functions. It drives motor drives of frontloading VCRs and auto-reverse cassette decks and stepping motors by reversible control at TTL and CMOS


    OCR Scan     		MB3863 MB3863 50-cm 25-cm 10-cm ZIP-17P-M03) DG25Tb5 ZIP-20P-M01) PDF

    PL 431 transistor

    Abstract: BGY145B pl 431 FX1115 vHF amplifier module vhf power module module rf vhf
    Text: Philips Sem iconductors • bhSBTBl 003D2T3 STS BB A P X Preliminary specification VHF amplifier module BGY145B N AMER PHILIPS/DISCRETE DESCRIPTION b'îE D ^ PINNING-SOT183A The BGY145B Is a RF amplifier module, designed for use in transmitters of mobile communications equipment


    OCR Scan     		bb53131 003DST3 BGY145B BGY145B bhS3T31 DQ302TÃ OT183A. PL 431 transistor pl 431 FX1115 vHF amplifier module vhf power module module rf vhf PDF

    Untitled

    Abstract: No abstract text available
    Text: L.3E D MSS1Ô7S D 0 G 1 0 2 b HONEYl i l ELL/ S 3MD • H 0 N 3 Honeywell S E C Preliminary RICMOS SEA OF TRANSISTORS GATE ARRAY HX1060 FEATURES RADIATION HARDNESS • Total Dose Hardness of >1x105 rad SiOa OTHER In production on Honeywell's 1.2 (im Minimum


    OCR Scan     		HX1060 1x105 1x1013rad PDF

    BGY122A

    Abstract: BGY122B MG044
    Text: Philips Semiconductors Preliminary specification UHF amplifier modules BGY122A; BGY122B FEATURES PINNING - SOT388A • Single 4.8 V nominal supply voltage PIN • 1.2 W output power DESCRIPTION 1 RF input • Easy control of output power by DC voltage 2 VC


    OCR Scan     		BGY122A; BGY122B BGY122A BGY122B OT388A MLB740 7110flSb 01D54b2 MG044 PDF

    l78s12cv

    Abstract: L78S05CV L785XX L78S L78S15CV L78S12CT L78s09cv L78S18CT
    Text: r z 7 S G S TH O M SO N R iiœ m Œ O T O K S L78S00 S E R IE S 2A POSITIVE VOLTAGE REGULATORS • OUTPUT CURRENT TO 2A ■ OUTPUT VOLTAGES OF 5 ; 7.5 ; 9 ; 10 ; 12 ; 15 ; 18; 24V ■ THERMAL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION ■ OUTPUT TRANSISTOR SOA PROTECTION


    OCR Scan     		L78S00 T0-220 l78s12cv L78S05CV L785XX L78S L78S15CV L78S12CT L78s09cv L78S18CT PDF

    Untitled

    Abstract: No abstract text available
    Text: Sept. 1995 Edition 1.0a FUJITSU DATA SHEET M B 1 5 1 4 SERIAL INPUT PLL FREQUENCY SYNTHESIZER DUAL SERIAL INPUT PLL FREQUENCY SYNTHESIZER WITH 400MHz PRESCALER The Fujitsu MB1514 is a dual serial input PLL phase locked loop frequency syn­ thesizer designed for cordless telephone applications.


    OCR Scan     		400MHz MB1514 operaB1514 20-LEAD FPT-20P-M01) 374T75b PDF

    SN75447

    Abstract: 400C D3004 IRF151 SN75374
    Text: SN75374 QUADRUPLE MOSFET DRIVER SLLS 025 - D3004, SEPTEM BER 1986 Quadruple Circuits Capable of Driving Hlgh-Capacltance Loads at High Speeds Output Supply Voltage Range From 5 V to 24 V Low Standby Power Dissipation Vcc 3 Supply Maximizes Output Source Voltage


    OCR Scan     		SN75374 SLLS025-D3004, SN75374 16jOAjj SN75447 400C D3004 IRF151 PDF

    pin out of lm338

    Abstract: LM33B lm338 OF IC LM338 LM338 used as a current regulator application note for lm338 12v 5amp battery charger adjustable current limiter lm338 7105A-AT2-502 LM138/LM338
    Text: LM138/LM338 National Semiconductor LM138, LM338 5-Amp Adjustable Regulators General Description The LM138 series of adjustable 3-terminal positive voltage regulators is capable of supplying in excess of 5A over a 1.2V to 32V output range. They are exceptionally easy to


    OCR Scan     		LM138/LM338 LM138, LM338 LM138 TL/H/9060-25 TL/H/9060-- pin out of lm338 LM33B OF IC LM338 LM338 used as a current regulator application note for lm338 12v 5amp battery charger adjustable current limiter lm338 7105A-AT2-502 LM138/LM338 PDF

    8054 transistor

    Abstract: S-8053ALR S8054ALR 8053alr 8054HN S-8053ALR-LJ-X S-8054HN-CB-X 8054ALB 8054ALR S-8054ALB
    Text: S-805 Series VOLTAGE DETECTOR The S-805 Series is a non-adjusting voltage detector using a CM O S process. The detection voltage is fixed internally. The voltage detectors are composed of a high-precision and low power consumption standard voltage source, a


    OCR Scan     		S-805 S-8051ANB, S-8051ANB-NA-X 000247b 8054 transistor S-8053ALR S8054ALR 8053alr 8054HN S-8053ALR-LJ-X S-8054HN-CB-X 8054ALB 8054ALR S-8054ALB PDF

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


    OCR Scan     		DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E PDF