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    060P2 Search Results

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    060P2 Price and Stock

    Rochester Electronics LLC ISL9R3060P2

    STR TO2202L PN 30A 600V
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    DigiKey ISL9R3060P2 Bulk 2,515 245
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    JEDEC 62060-P2S02

    PWR XFMR TOROIDAL 25VA CHAS MT
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    DigiKey 62060-P2S02 Bulk 2,114 1
    • 1 $19.09
    • 10 $19.09
    • 100 $18.65
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    Power Integrations 1SC2060P2A0-17

    IC GATE DRVR HI/LOW SIDE MODULE
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    DigiKey 1SC2060P2A0-17 Box 8 1
    • 1 $152.88
    • 10 $134.53
    • 100 $91.0402
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    Avnet Americas 1SC2060P2A0-17 Bulk 12 Weeks 20
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    • 100 $108.912
    • 1000 $95.298
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    Mouser Electronics 1SC2060P2A0-17 29
    • 1 $152.88
    • 10 $134.53
    • 100 $116.99
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    Newark 1SC2060P2A0-17 Bulk 1
    • 1 $177.1
    • 10 $158.01
    • 100 $112.79
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    TME 1SC2060P2A0-17 1
    • 1 $130.3
    • 10 $125.71
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    EBV Elektronik 1SC2060P2A0-17 14 Weeks 20
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    Brady Worldwide Inc 5060P-2

    5060P-2 YEL 2" GOTHIC QUIK-ALIGN
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    DigiKey 5060P-2 Bulk 1
    • 1 $16.1
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    MACOM CGH35060P2

    RF MOSFET GAN HEMT 28V 440206
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    DigiKey CGH35060P2 Tray 50
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    • 100 $185.1202
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    Mouser Electronics CGH35060P2
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    Richardson RFPD CGH35060P2 1
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    060P2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original
    PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original
    PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2

    CGH35060

    Abstract: No abstract text available
    Text: CGH35060F2 / 060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original
    PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 CGH35060