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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Si6955ADQ New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.080 @ VGS = –10 V "2.9 0.135 @ VGS = –4.5 V "2.2 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6955ADQ G1 G2 Top View	Original	Si6955ADQ 09-Nov-99	PDF
ESD test plan Abstract: vqe 14e IR 134E 463E-04 VQE 13E WE VQE 23 F 47AG mosfet 9420 vqe 24e WE VQE 11 E Text: Single Event Effects Test Report R5, 100V, SE, N R5, 130V, SE, N R5, 150V, SE, N R5, 60V, N R5, 30V, N March 2000 - B.N.L. 233 Kansas Street El Segundo CA 90245 Fax-On-Demand 310 252 7100 Website WWW.irf.com International Rectifier Corp. SEE Test Report March 2000 - B.N.L.	Original		PDF
Untitled Abstract: No abstract text available Text: Si6955ADQ New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.080 @ VGS = –10 V "2.9 0.135 @ VGS = –4.5 V "2.2 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6955ADQ G1 G2 Top View	Original	Si6955ADQ 08-Apr-05	PDF
Si6955ADQ Abstract: No abstract text available Text: Si6955ADQ New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.080 @ VGS = –10 V "2.9 0.135 @ VGS = –4.5 V "2.2 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6955ADQ G1 G2 Top View	Original	Si6955ADQ S-99450--Rev. 06-Dec-99	PDF
BAS381 Abstract: BAS382 BAS383 Text: BAS381.BAS383 Vishay Telefunken Schottky Barrier Diodes Features D Integrated protection ring against static discharge D D D D Low capacitance Low leakage current Low forward voltage drop Very low switching time 96 12315 Applications General purpose and switching	Original	BAS381. BAS383 BAS381 BAS382 D-74025 06-Dec-00 BAS381 BAS382 BAS383	PDF
Untitled Abstract: No abstract text available Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 - REVISIONS ALL RIGHTS RESERVED. BY - P LTR DESCRIPTION C1 D DATE DWN APVD REVISED PER ECO-11-005294 20APR2011 RK HMR REVISED PER ECO-13-019231 09DEC2013 DR RB D D 776438-2 SCALE	Original	ECO-11-005294 ECO-13-019231 20APR2011 09DEC2013 06DEC99 03JAN02	PDF
SI3812DV Abstract: No abstract text available Text: Si3812DV New Product Vishay Siliconix N-Channel 20-V D-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.125 @ VGS = 4.5 V "2.4 0.200 @ VGS = 2.5 V "1.8 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A)	Original	Si3812DV S-61860--Rev. 06-Dec-99	PDF
Untitled Abstract: No abstract text available Text: THIS DRAWING IS C O P Y R IG H T U N P U B L IS H E D . 19 RELEASED BY AMP INCORPO RA TE D. FOR ALL PUBLICATION RIGHTS , 19 LOC RE SE R VE D . DI ST G REVISIONS 50 L TR DESCRIPTION REV D 222.25 [8.75] SHOWS PER DATE 0G3A-027Q-01 MINIMUM 2 APRO' 1 D R A WI N G	OCR Scan	0G3A-027Q-01 290CT99 06-DEC-99 /home/ampl3469/edmmod	PDF