1N4002
Abstract: 1N4148 C2100 MAX3232CSE TLE7259 MB96F
Text: Fujitsu Microelectronics Europe Application Note MCU-AN-300205-E-V16 F²MC-16FX FAMILY 16-BIT MICROCONTROLLER ALL SERIES USART APPLICATION NOTE USART Revision History Revision History Date 2006-04-28 2006-12-07 2007-02-21 2007-08-29 2007-10-10 2008-07-07 2010-02-19
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MCU-AN-300205-E-V16
MC-16FX
16-BIT
1N4002
1N4148
C2100
MAX3232CSE
TLE7259
MB96F
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Vybrid Reference Manual
Abstract: TAG 8634 vybrid
Text: Vybrid Reference Manual F-Series Document Number: VYBRIDRM Rev. 5, 07/2013 Vybrid Reference Manual, Rev. 5, 07/2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1 About This Document 1.1 1.2
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relay 24v 3a
Abstract: relay 24v 10a CMX60D10 CMX60D20 36V 3A led SOLID STATE RELAY 3A DMP6301A CMX200D3 DC DC INPUT 24V OUTPUT 6V MPDCD3-b
Text: Solid - State - Relais CRYDOM Halbleiter Relais MBI Industrievertretungen 1/07 CMX60D20 – CMX60D10 - CMX100D6 - CMX200D3 - DMP6301 –MPDCD3-B DC/DC DC/DC DMP CMX ? ? ? ? DC / DC LED im Eingang / LED indication status Federzugklemmen Index: - F / cage-clamp -F
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CMX60D20
CMX60D10
CMX100D6
CMX200D3
DMP6301
200Vdc
60Vdc
30Apk
A-20mA
relay 24v 3a
relay 24v 10a
CMX60D20
36V 3A led
SOLID STATE RELAY 3A
DMP6301A
DC DC INPUT 24V OUTPUT 6V
MPDCD3-b
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Pan1321
Abstract: PMB8753 T8753 Infineon Specific HCI Commands bluetooth bluemoon T8753-2 DS-1321-2400-103-V0 2-XV10T1 infineon spp at commands CLK32
Text: Preliminary Product Overview D S- 13 21-2400-1 03-V0.9 July 2008 ENW89811x4CF Bluetooth QD ID: Published after Qualification PAN1321-SPP I nfine o n ’ s BlueMoonUniversal Platform Wireless Modules Edition 2008-07-07 Published by Panasonic Electronic Devices Europe GmbH,
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03-V0
ENW89811x4CF
PAN1321-SPP
D-21337
DS-1321-2400-103-V0
PAN1321
PMB8753/2
T8753/2-XV10T1
T8753-2
Pan1321
PMB8753
T8753
Infineon Specific HCI Commands bluetooth
bluemoon
2-XV10T1
infineon spp at commands
CLK32
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ED-96
Abstract: DC600V Ed96
Text: 6100096681 TO 41749 SEGEA F’RO!I61O25 0 2 07/26/’96 12:10 07,’26 SPEC. Ny,. s~ l?:i? P,02,’14 ED-96028 ‘“w PAGE -.> .— ELECTRONIC COMPO~NTS REPwSEWAlh GROUP SHARP CORPOWTION OPTO-ELECTRONIC DEVICES DIV. SPECIFICATION I DEVICE SPECIFICATION POR
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I61O25
ED-96028
ED-9602$
ED-96
DC600V
Ed96
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JW-22CU
Abstract: STR F12 jw-13pg jw-2HC ZM-61E JW212 B0344 b0345 Z-312J JW-21su
Text: 00 09 00 04 40 1 00 00 00 00 Fc C 12w M P 00 00 09 04 40 1 00 09 00 SU 211 B w 19 7 Fc P 2 c1 M C 00 1 6 F 90 44 1 07 35 6 07 35 7 09 00 5 73 6 1 44 C M P 00 40 4 19 00 w 12 Fc 00 00 04 1W 21 FC 09 00 SU B 07 35 7 09 Sample of programs 07 35 4 00 ニュー
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F-310
F-311
F-315
F-316
JW20H
F-380
JW-22CU
STR F12
jw-13pg
jw-2HC
ZM-61E
JW212
B0344
b0345
Z-312J
JW-21su
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Untitled
Abstract: No abstract text available
Text: EC Axialventilatoren für Stalllüftungen Die Wahl der Ingenieure Ausgabe 07/2011 Die neuen EC Axialventilatoren für Stalllüftungen Energieeffiziente Ventilatoren gewinnen auch in der Landwirtschaft immer mehr an Bedeutung. Getrieben durch gesetzliche Vorschriften und steigende Energiekosten verlangt der Markt neue
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ZG-11/07-1â
D-74673
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MBR2045CT
Abstract: MBR2035CT MBR2035CT-1 MBR2045CT-1 MBRB2035CT MBRB2045CT SMD-220
Text: 2002-02-20 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-245-99 MBR2035CT sch diodTO-220AB 70-246-07 MBR2045CT sch diodTO-220AB PD-2.320 rev. B 06/99 MBR2045CT MBRB2045CT
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MBR2035CT
diodTO-220AB
MBR2045CT
MBR2045CT
MBRB2045CT
MBR2045CT-1
MBR2035CT-1
MBR2045CT-1
MBRB2035CT
MBRB2045CT
SMD-220
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AN-994
Abstract: IRLZ44N IRLZ44NL IRLZ44NS
Text: 2002-03-07 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-189-38 IRLZ44NS HEXFET D2Pak PD - 91347D IRLZ44NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRLZ44NS
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IRLZ44NS
91347D
IRLZ44NS/L
IRLZ44NS)
IRLZ44NL)
AN-994
IRLZ44N
IRLZ44NL
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IRLIZ44N
Abstract: IRLZ44N
Text: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-186-07 IRLIZ44N HEXFET TO-220 PD - 9.1498A IRLIZ44N HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology
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IRLIZ44N
O-220
IRLIZ44N
IRLZ44N
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IRLZ34N
Abstract: No abstract text available
Text: 2002-03-07 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-188-70 IRLZ34N HEXFET TO-220 PD - 9.1307B IRLZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive
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IRLZ34N
O-220
1307B
IRLZ34N
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Untitled
Abstract: No abstract text available
Text: July 2008 HY[B/I]18T1G400C2[C/F] L HY[B/I]18T1G800C2[C/F](L) HY[B/I]18T1G160C2[C/F](L) 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM Internet Data Sheet Rev. 1.50 Internet Data Sheet HY[B/I]18T1G[40/80/16]0C2[C/F](L) 1-Gbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.50, 2008-07
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18T1G400C2
18T1G800C2
18T1G160C2
18T1G
DDR2-1066
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HYB25D256160CF
Abstract: DDR200 DDR266 DDR400 DDR400B HYB25D256 P-TFBGA-60
Text: Data Sheet, V0.5, May 2003 R Y HYB25D256400C[E/F] L HYB25D256800C[E/F](L) HYB25D256160C[E/F](L) P R E LI M IN A 256-Mbit Double Data Rate SDRAM Green Product Memory Products N e v e r s t o p t h i n k i n g . Edition 2003-05-07 Published by Infineon Technologies AG,
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HYB25D256400C
HYB25D256800C
HYB25D256160C
256-Mbit
P-TFBGA-60
GPX09261
P-TSOPII-66-1
HYB25D256160CF
DDR200
DDR266
DDR400
DDR400B
HYB25D256
P-TFBGA-60
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J32CG
Abstract: 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4
Text: 1 2 4 3 5 6 7 TABLE OF CONTENTS F F PAGE 02 - BLOCK DIAGRAM PAGE 03 - 750GX ADDRESS/DATA BUSSES PAGE 04 - 750GX CONTROLS AND GROUND PAGE 05 - 750GX POWER AND DECOUPLING PAGE 06 - TSI108 PROCESSOR BUS INTERFACE PAGE 07 - TSI108 MEMORY INTERFACE PAGE 08 - DDR2 DIMM CONNECTOR SLOT 0
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750GX
TSI108
RS232
NC7SZ00
J32CG
61a3 mosfet
BCM5461KFB
61a3
58A6
bcm5461
60F10
L32SD
DQ27152
A26B4
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Untitled
Abstract: No abstract text available
Text: July 2008 HYB18T C1G 80 0 C2 F HYB18T C1G 16 0 C2 F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM EU RoHS Compliant Products Internet Data Sheet Rev. 1.10 Internet Data Sheet HYB18TC1G[80/16]0C2F 1-Gbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.10, 2008-07
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HYB18T
HYB18TC1G
DDR2-1066
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-2.317 rev. F 07/03 MBR10. Series MBRB10. Series SCHOTTKY RECTIFIER 10 Amp Major Ratings and Characteristics Characteristics Description/ Features This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier
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MBR10.
MBRB10.
MBR1045
MBR1045
79E-01
72E-01
45E-01
93E-01
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8-24UNEF-2B
Abstract: No abstract text available
Text: REV, DATE DESCRIPTION NC 07/07/04 INITIAL RELEASE 5 / 8 -2 4 U N E F -2 B .50 [0.020]-|t— 17.00 [0.670]- UNLESS DTHDVBE S^ffiRCD aUCNSONS ARC IN ULLMCTER3- DMEN3KH3 IN [ ] ARC M APPROVALS DATE G.R.S. Û7/Û7/Û4 HUES AND FQft «WTOMffl REFERANCE DULY, 0.5 - 8mm ± 0.20mm
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5/8-24UNEF-2B
UNLI55
50rnm
8-24UNEF-2B
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ESJC07-09B
Abstract: GGT DIODE ESJC07 ESJC07-12B
Text: ESJC07 9kV, 12kV : O u tlin e D ra w in g s F HIGH VOLTAGE SILICON DIODE E S J C 07& , ESJC 07 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.
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ESJC07
24min.
ESJC07-09B
ESJC07-12B
I95t/R89)
ESJC07-09B
GGT DIODE
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Untitled
Abstract: No abstract text available
Text: REVISIONS DESCRIPTION REV 560 14.2 mm .375 REF (9.5mm) DATE 01 2 SEE ECN 8 0 -0 0 8 4 01 REDRAWN ON CAD, ECN 9 2 -0 0 1 0 3 BZ 2/26/80 W $f OSS» 07/09/92 DM 7/16/99 REVISED PER ECN 9 9 -0 0 9 4 01 4 APPROVED VM 2/22/60 07/14/92 S ".^¡ .065 (1.7 mm) OSM JACK
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03\/f
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: POLYFET R F DEVICES D VBMIGQT QGQOQBS b • POLYFET RF DEVICES F1201 7-.3?'07 PATENTED GOLD METALIZED SILICON RF POWER MOSFET General Description Silicon vertical DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown.
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72mDD-Ã
F1201
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DME3256-000
Abstract: DMF6554-000 DMB2855-000 DMJ3102-000 132-042 DMJ4317-000 DMJ3086-000 DMJ3086 DME3014-000 silicon di for microwave diode mixer
Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes ALPHA IND/ S E M I C O N D U C T O R _ 4ÛE D • 0 S Ô S 4 4 3 0 0 0 1 1 Q S ¿145 ■ ALP ék . Features '^ k \ / T *07*07 ^ / ■ Ideal for MIC ■ Low 1/f Noise Low Intermodulation Distortion Low Turn On
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DMB2853-000
DMB2854-000
DMB2855-000
DMB2856-000
DMB6780-000
DMB6782-000
DMB3000-000
DMB3001-000
DMB6781-000
DMB3003-000
DME3256-000
DMF6554-000
DMJ3102-000
132-042
DMJ4317-000
DMJ3086-000
DMJ3086
DME3014-000
silicon di for microwave diode mixer
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PDF
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91836
Abstract: No abstract text available
Text: REVISIONS N J 4 ^ O J o 7 / 1 6 -2 8 U N E F -2 A TH’D I NO I * ER KH 36836 02/15/96 CN KH 37022 A 06/21/96 CN JJS 37087 E 08/07/96 CN KH 37428 D 04/07/98 REVISED PER DMF304 ER36216 TZ 12/22/11 SEE SHEET 2 FOR KEYING ANGLE 4 - 4 0 U N C -2 B TH’D MARK: KINGS 2 4 3 0 - 2 - *
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DMF304
ER36216
91836
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radar detector 10.5 ghz local oscillator
Abstract: DMC5501 DMF-6106 DMF4039 dmf6106 005801 DMF6130-013 Silicon Point Contact Mixer Diodes
Text: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes ALPHA IND/ S E M I C O N D U C T O R 0 5 A S M M 3 Q D D l l M b 3bfl • ALP 43E D * Features T í á,í' ■ ■ ■ ■ ■ 07-07 Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications
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40GHz
in018
DMF4039-019
DMF5078-012
DMF5078-013
DMF4039-012
DMF4039-013
DMF5078-006
DMF5078-007
DMF4039-006
radar detector 10.5 ghz local oscillator
DMC5501
DMF-6106
DMF4039
dmf6106
005801
DMF6130-013
Silicon Point Contact Mixer Diodes
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Untitled
Abstract: No abstract text available
Text: P r o d u c t S p e cifica tio n t t f C O j Bectronii 108-5471 » ft» « M SP 26 JA N 07 Rev.O .040 Series Multi-Lock Connector wire to wire (.040MLC) .040 v 'h X •7 J l t f •3* :* »SE«bS)(.040M LC) Contents F irst 9 pages following this top sh eet
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040MLC)
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