Untitled
Abstract: No abstract text available
Text: New Product VT30L60C, VIT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses
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VT30L60C,
VIT30L60C
O-220AB
O-262AA
22-B106
2002/95/EC
2002/96/EC
VT30L60C
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: New Product VFT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation
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PDF
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VFT30L60C
ITO-220AB
22-B106
2002/95/EC
2002/96/EC
ITO-220trademarks
2011/65/EU
2002/95/EC.
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VBT30L60C
Abstract: No abstract text available
Text: New Product VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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PDF
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VBT30L60C
O-263AB
J-STD-020,
2002/95/EC
2002/96/EC
11-Mar-11
VBT30L60C
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Untitled
Abstract: No abstract text available
Text: New Product VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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PDF
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VBT30L60C
O-263AB
J-STD-020,
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VBT4060C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation
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PDF
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VBT4060C
O-263AB
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product VBT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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PDF
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VBT4060C
O-263AB
J-STD-020,
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: CLA, CLB Vishay Electro-Films Thin Film Eight Resistor Array FEATURES Product may not be to scale • Wire bondable • Eight equal value resistors on a 0.060" x 0.090" chip • Resistance range: 20 Ω to 1 MΩ The CLA and CLB resistor arrays are the hybrid equivalent
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PDF
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18-Jul-08
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TSOP4438
Abstract: TSOP4838 IR receiver remote control transmitter and receiver circuit f
Text: TSOP22., TSOP24., TSOP48., TSOP44. Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for PCM frequency • Improved shielding against EMI
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TSOP22.
TSOP24.
TSOP48.
TSOP44.
2002/95/EC
2002/96/EC
TSOP4438
TSOP4838 IR receiver
remote control transmitter and receiver circuit f
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Untitled
Abstract: No abstract text available
Text: 572D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Coated, Maximum CV FEATURES P case top P case bottom B and T cases Q, S and A cases • P case offers single-sided lead Pb -free terminations RoHS • Wraparound lead (Pb)-free terminations: Q, S,
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PDF
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EIA-481-1
2002/95/EC
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: New Product VBT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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PDF
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VBT4060C
O-263AB
J-STD-020,
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: New Product VFT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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PDF
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VFT4060C
ITO-220AB
22-B106
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: New Product VT30L60C, VIT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses
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Original
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PDF
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VT30L60C,
VIT30L60C
O-220AB
O-262AA
22-B106
2002/95/EC
2002/96/EC
VT30L60C
2011/65/EU
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TF3C226
Abstract: 40113 071 0039 TF3C10
Text: TF3 Vishay Sprague Low ESR Solid Tantalum Chip Capacitors TANTAMOUNT Molded Case, Built-In-Fuse FEATURES • Terminations: 100 % matte tin, standard, tin/lead available • Molded case available in three case codes • Compatible with “High Volume” automatic pick
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PDF
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535BAAC
2002/95/EC
18-Jul-08
TF3C226
40113
071 0039
TF3C10
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Untitled
Abstract: No abstract text available
Text: New Product VT30L60C, VIT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses
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Original
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PDF
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VT30L60C,
VIT30L60C
O-220AB
O-262AA
22-B106
2002/95/EC
2002/96/EC
VT30L60C
2011/65/EU
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|
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Untitled
Abstract: No abstract text available
Text: VLMO31. Vishay Semiconductors Standard SMD LED PLCC2 FEATURES 94 8553 DESCRIPTION This device has been designed for applications requiring narrow brightness and color selection. The package of this device is the PLCC-2. It consists of a lead frame which is embedded in a
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PDF
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VLMO31.
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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PDF
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VBT30L60C
O-263AB
J-STD-020,
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: New Product VT4060C, VIT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses K
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Original
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PDF
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VT4060C,
VIT4060C
O-220AB
O-262AA
22-B106
2002/95/EC
2002/96/EC
VT4060C
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product VT4060C, VIT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses K
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Original
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PDF
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VT4060C,
VIT4060C
O-220AB
O-262AA
22-B106
2002/95/EC
2002/96/EC
VT4060C
2011/65/EU
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Untitled
Abstract: No abstract text available
Text: VLMO31. Vishay Semiconductors Standard SMD LED PLCC2 FEATURES 94 8553 DESCRIPTION This device has been designed for applications requiring narrow brightness and color selection. The package of this device is the PLCC-2. It consists of a lead frame which is embedded in a
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Original
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PDF
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VLMO31.
JESD22-A114-B
AEC-Q101
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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J-STD-002
Abstract: VIT4060C
Text: New Product VT4060C, VIT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses K
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Original
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PDF
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VT4060C,
VIT4060C
O-220AB
O-262AA
22-B106
2002/95/EC
2002/96/EC
VT4060C
18-Jul-08
J-STD-002
VIT4060C
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Untitled
Abstract: No abstract text available
Text: New Product VFT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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PDF
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VFT30L60C
ITO-220AB
22-B106
2002/95/EC
2002/96/EC
ITO-220hay
11-Mar-11
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J-STD-075
Abstract: mkt hq 372 MKT 1840 MKP 376 MKP 1813 Vishay MKP 1848 mkt hq 371 Vishay MKP 339 KP1830 mkp 339M
Text: V I S H A Y I N T E R T E C H N O L O G Y, I N C . Capacitors Application Note Soldering Guidelines for Film Capacitors Vishay recommends that users observe the following guidelines for soldering our film capacitors. Adherence to these recommendations will help to safeguard product specifications and reliability while preventing damage to the capacitors during
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07-Dec-10
J-STD-075
mkt hq 372
MKT 1840
MKP 376
MKP 1813
Vishay MKP 1848
mkt hq 371
Vishay MKP 339
KP1830
mkp 339M
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EF16HP09-QO
Abstract: LNK574 LNK574DG DER-258 EN550022 E-Shield Transformer Techniques for Low EMI TDK Ferrite Core PC44 vishay 1N4007 DO-214AC EKZE160ELL331MHB5D SBCP-47HY102B
Text: Design Example Report Title <5 mW No-load Input Power, 2.1 W CV/CC Charger Using LinkZeroTM-LP LNK574DG Specification 85 VAC – 265 VAC Input; 6 V, 0.35 A Output Application LinkZero-LP Reference Design Author Applications Engineering Department Document
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LNK574DG
DER-258
EF16HP09-QO
LNK574
LNK574DG
DER-258
EN550022
E-Shield Transformer Techniques for Low EMI
TDK Ferrite Core PC44
vishay 1N4007 DO-214AC
EKZE160ELL331MHB5D
SBCP-47HY102B
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Untitled
Abstract: No abstract text available
Text: New Product VFT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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PDF
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VFT30L60C
ITO-220AB
22-B106
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
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