Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 20 RELEASED FOR PUBLICATION LOC - ALL RIGHTS RESERVED. BY - 1 REVISIONS DIST - P A D 7.2 INITIAL RELEASE PITCH SECTION 3.3 1/8/2013 LZH MYH 07MAR2013 WRP MYH B ECR-13-011563 15Aug.2013 WRP ZHB P/N Pos. 2-1971904-3
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07MAR2013
ECR-13-011563
15Aug
AWG24
AWG20
01Aug2013
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC - DIM L REVISIONS DIST ES ALL RIGHTS RESERVED. 1 OO P LTR DESCRIPTION DATE DWN APVD C8 REV PER ECR-13-004179 07MAR2013 CZ SZ C9 REVISED 27MAY2013 CZ SZ # .010 1 PART NUMBER, AND DATE CODE MARKED IN AREA SHOWN.
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07MAR2013
ECR-13-004179
27MAY2013
31JUL2006
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 3 2 20 LOC GP ALL RIGHTS RESERVED. 1 REVISIONS DIST 00 P LTR C5 DIM D DESCRIPTION DATE ADD 1-6450543-3 DWN APVD OL 07MAR2012 SZ .150 1 "AMP", PART NUMBER AND DATE CODE TO BE MARKED IN AREA SHOWN
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07MAR2012
17MAY05
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. C D - RELEASED FOR PUBLICATION LOC H ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. COPYRIGHT - 2 3 1 REVISIONS DIST - P NOTES: A B C 1. MATERIALS: DESCRIPTION LTR DATE DWN APVD RELEASED PER ECR-13-003079 07MAR2013 PP
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ECR-13-003079
07MAR2013
ECR-13-006472
17APR2013
ECR-14-000978
22JAN2014
2002/95/EC
19JUL2012
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7n52
Abstract: 1525P
Text: STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.72 Ω, 6 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 packages Datasheet — production data Features Order codes TAB VDSS RDS on max. ID TAB Pw 2 3 1 2 3 STB7N52K3 STD7N52K3
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STB7N52K3,
STD7N52K3
STF7N52K3,
STP7N52K3
O-220FP
O-220
STB7N52K3
STF7N52K3
7n52
1525P
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1N414 diode
Abstract: R11G L6591 AM-1326 tc 5070 controller half bridge l6591 C1247 IC L6562 SHORT CIRCUIT PROTECTION FOR L6562 phototransistor octocoupler
Text: L6591 PWM controller for ZVS half bridge Datasheet − production data Features • Complementary PWM control for soft-switched half bridge with programmable deadtime ■ Up to 500 kHz operating frequency ■ Onboard high-voltage startup ■ Advanced light load management
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L6591
SO16N
1N414 diode
R11G
L6591
AM-1326
tc 5070 controller
half bridge l6591
C1247
IC L6562
SHORT CIRCUIT PROTECTION FOR L6562
phototransistor octocoupler
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C547 b
Abstract: SHORT CIRCUIT PROTECTION FOR L6562 PWM controller for ZVS half-bridge L6591 BC5478 cc3041 C5478 L6563 14821 pwm smps
Text: L6591 PWM controller for ZVS half-bridge Features • Complementary PWM control for soft-switched half-bridge with programmable dead-time ■ Up to 500 kHz operating frequency ■ On-board high-voltage start-up ■ Advanced light load management ■ Adaptive UVLO
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L6591
C547 b
SHORT CIRCUIT PROTECTION FOR L6562
PWM controller for ZVS half-bridge
L6591
BC5478
cc3041
C5478
L6563
14821
pwm smps
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Untitled
Abstract: No abstract text available
Text: M24LR16E-R Dynamic NFC/RFID tag IC with 16-Kbit EEPROM, energy harvesting, I²C bus and ISO 15693 RF interface Datasheet - production data Contactless interface • ISO 15693 and ISO 18000-3 mode 1 compatible • 13.56 MHz ±7k Hz carrier frequency SO8 MN
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M24LR16E-R
16-Kbit
64-bit
32-bity
DocID018932
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TDA7706
Abstract: No abstract text available
Text: TDA7706 Highly integrated tuner for AM/FM car-radio Data brief production data Features • FM, AM and weather band reception ■ Fully integrated VCO for world tuning ■ High performance PLL for fast RDS system ■ Integrated AM-LNA and PIN diodes ■
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TDA7706
TDA7706
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SMC53XXB
Abstract: 5W zener diode smc5346b
Text: SMC53XXB Series Voltage 6.8V ~ 100V 5W Peak Power Surface Mount Zener Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free and lead-free SMC FEATURES Glass passivated chip Low leakage Built-in strain relief
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SMC53XXB
DO-214AB
SMC5371B
SMC5372B
SMC5373B
SMC5374B
SMC5375B
SMC5376B
SMC5377B
SMC5378B
5W zener diode
smc5346b
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Untitled
Abstract: No abstract text available
Text: STW82101B RF down converter with embedded integer-N synthesizer Datasheet −production data Features • High linearity: – IIP3: +24.5 dBm – 2FRF-2FLO spurious rejection: 75 dBc ■ Noise figure: – NF: 9.5 dB ■ Conversion gain – CG: 8.5 dB ■ RF range: 695 MHz to 960 MHz
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STW82101B
1101A2A1A0)
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GIPS14K60T
Abstract: No abstract text available
Text: STGIPS14K60T SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 14 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • IPM 14 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes
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STGIPS14K60T
GIPS14K60T
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m24lr04
Abstract: M24LR04E-RDW M24LR04E-R 24L04 m24lr04e ISO103
Text: M24LR04E-R 4-Kbit EEPROM with password protection, dual interface & energy harvesting: 400 kHz I²C bus & ISO 15693 RF protocol at 13.56 MHz Datasheet - production data Contactless interface • ISO 15693 and ISO 18000-3 mode 1 compatible • 13.56 MHz ±7k Hz carrier frequency
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M24LR04E-R
64-bit
32-bit
DocID022208
m24lr04
M24LR04E-RDW
M24LR04E-R
24L04
m24lr04e
ISO103
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M24LR64ER
Abstract: 24l64 464-E
Text: M24LR64E-R 64-Kbit EEPROM with password protection, dual interface & energy harvesting: 400 kHz I²C bus & ISO 15693 RF protocol at 13.56 MHz Datasheet - production data Contactless interface • ISO 15693 and ISO 18000-3 mode 1 compatible • 13.56 MHz ± 7 kHz carrier frequency
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M24LR64E-R
64-Kbit
64-bit
32-bit
DocID022712
M24LR64ER
24l64
464-E
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BD135
Abstract: BD135 BD137 BD139
Text: BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 High current Complement to BD136, BD138 and BD140 1Emitter 2Collector 3Base CLASSIFICATION OF hFE 1
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BD135
BD137
BD139
O-126
BD136,
BD138
BD140
BD135-6
BD135-10
BD135-16
BD135 BD137 BD139
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Untitled
Abstract: No abstract text available
Text: 2SD886 3A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 Low frequency power amplifier High Current 1Emitter 2Collector 3Base Collector 2 REF. 3
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2SD886
O-126
200mA
100mA
07-Mar-2011
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Untitled
Abstract: No abstract text available
Text: STDS75 Digital temperature sensor and thermal watchdog Datasheet − production data Features • Measures temperatures from –55 °C to +125 °C –67 °F to +257 °F – ±0.5 °C (typ) accuracy – ±2 °C (max) accuracy from –25 °C to +100 °C ■
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STDS75
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JC JB jt
Abstract: No abstract text available
Text: STW82102B RF down converter with embedded integer-N synthesizer Preliminary data Features • High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 84 dBc ■ Noise figure: – NF: 10.4 dB ■ Conversion gain – CG: 8 dB ■ RF range: 1425 MHz to 1910 MHz
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STW82102B
JC JB jt
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TDA7491P
Abstract: 13540
Text: TDA7491P 2 x 10-watt dual BTL class-D audio amplifier Features • 10 W + 10 W continuous output power: RL = 6 Ω, THD = 10% at VCC = 11 V ■ 9.5 W + 9.5 W continuous output power: RL = 8 Ω, THD = 10% at VCC = 12 V ■ Wide range single supply operation 5 V - 18 V
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TDA7491P
10-watt
PowerSSO-36
TDA7491P
13540
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Untitled
Abstract: No abstract text available
Text: STW82101B RF down converter with embedded integer-N synthesizer Datasheet −production data Features • High linearity: – IIP3: +24.5 dBm – 2FRF-2FLO spurious rejection: 75 dBc ■ Noise figure: – NF: 9.5 dB ■ Conversion gain – CG: 8.5 dB ■ RF range: 695 MHz to 960 MHz
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STW82101B
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M95128-W
Abstract: No abstract text available
Text: M95128-125 Automotive 128-Kbit serial SPI bus EEPROM with high-speed clock Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 128 Kb (16 Kbytes) of EEPROM – Page size: 64 bytes SO8 (MN) 150 mil width ■ Write – Byte Write within 5 ms
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M95128-125
128-Kbit
M95128
M95128-W
40-year
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Untitled
Abstract: No abstract text available
Text: STW82102B RF down converter with embedded integer-N synthesizer Datasheet −production data Features • High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 85 dBc ■ Noise figure: – NF: 10.5 dB ■ Conversion gain – CG: 8 dB ■ RF range: 1425 MHz to 1910 MHz
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STW82102B
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Untitled
Abstract: No abstract text available
Text: THIS DRAWI NG IS UNPUBLISHED. R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L C O P Y R I G H T 20 20 LOC R EV 1S I O N S DIST R 1G H T S R E S E RV E D. P LTR DESCRIPTION DATE DWN APVD 1 P R OP OS E D
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OCR Scan
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I6AUG20I0
28SEP2011
07MAR2011
6AUG20
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Untitled
Abstract: No abstract text available
Text: THIS DRAWI NG IS UNPUBLISHED. R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L C O P Y R I G H T 20 20 LOC R EV 1S I O N S DIST R 1G H T S R E S E RV E D. P LTR DESCRIPTION DATE DWN APVD 1 P R OP OS E D
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25JUN2009
28SEP2011
07MAR2011
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