080P3S
Abstract: D149 BSO080P03S IEC61249-2-21 JESD22-A114
Text: BSO080P03S H OptiMOS -P Power-Transistor Product Summary Features V DS -30 V • P-Channel R DS on ,max 8 mΩ • Enhancement mode ID -14.9 A • Logic level • 150°C operating temperature PG-DSO-8 • Qualified according JEDEC for target applications
|
Original
|
BSO080P03S
IEC61249-2-21
080P3S
080P3S
D149
IEC61249-2-21
JESD22-A114
|
PDF
|
080P3S
Abstract: D149 D149 diode BSO080P03S D1-49 D-149
Text: BSO080P03S OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 8 mΩ ID -14.9 A • Logic level • 150°C operating temperature • Avalanche rated P-DSO-8 • dv /dt rated • Ideal for fast switching buck converter
|
Original
|
BSO080P03S
080P3S
080P3S
D149
D149 diode
BSO080P03S
D1-49
D-149
|
PDF
|
080P3S
Abstract: BSO080P03S Q67042-S4232
Text: BSO080P03S OptiMOS -P Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 8 mΩ ID -14.9 A • Logic level • 150°C operating temperature • Avalanche rated P-DSO-8 • dv /dt rated • Ideal for fast switching buck converter
|
Original
|
BSO080P03S
Q67042-S4232
080P3S
080P3S
BSO080P03S
Q67042-S4232
|
PDF
|
080P3S
Abstract: D149 D149 diode BSO080P03S NAS1 P-DSO-8
Text: BSO080P03S OptiMOS -P Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 8 mΩ ID -14.9 A • Logic level • 150°C operating temperature • Avalanche rated P-DSO-8 • dv /dt rated • Ideal for fast switching buck converter
|
Original
|
BSO080P03S
080P3S
24ngerous
080P3S
D149
D149 diode
BSO080P03S
NAS1
P-DSO-8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSO080P03S H OptiMOS -P Power-Transistor Product Summary Features V DS -30 V • P-Channel R DS on ,max 8 mY • Enhancement mode ID -14.9 A • Logic level • 150°C operating temperature PG-DSO-8 • Qualified according JEDEC for target applications • Pb-free lead plating; RoHS compliant
|
Original
|
BSO080P03S
IEC61249-2-21
080P3S
|
PDF
|
D149 diode
Abstract: 1SS100
Text: BSO080P03S H OptiMOS -P Power-Transistor Product Summary Features V DS -30 V • P-Channel R DS on ,max 8 m: • Enhancement mode ID -14.9 A • Logic level • 150°C operating temperature PG-DSO-8 • Qualified according JEDEC for target applications • Pb-free lead plating; RoHS compliant
|
Original
|
BSO080P03S
IEC61249-2-21
080P3S
D149 diode
1SS100
|
PDF
|