m51171
Abstract: No abstract text available
Text: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.
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MSM51V17180
576-Word
18-Bit
MSM51V17180
cycles/32ms
m51171
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Untitled
Abstract: No abstract text available
Text: HY U NDAI HYM594000B Series SEMICONDUCTOR 4M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling
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HYM594000B
HY5117400
HY514100A
HYM594000BM/BLM
compa-MAY93
DD16B2
4k750flA
0Q01flfl3
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42-PIN
Abstract: MSM51V16180-70 MSM51V16180-80 V16180 MSM51VI6180
Text: O K I Semiconductor MSM51V16180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.
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MSM51V16180
576-Word
18-Bit
MSM51V16180
MSM51VI6180
cycles/64ms
42-PIN
MSM51V16180-70
MSM51V16180-80
V16180
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transistor W2W
Abstract: w2w transistor oki Package SOJ 32-PIN A204 MSM51V17900-70 MSM51V17900-80 uras 14
Text: O K I Semiconductor MSM51V17900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51VI7900 is OKI's CMOS silicon gate process technology.
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MSM51V17900_
152-Word
MSM51V17900
MSM51VI7900
cycles/32ms
32PIN
SOJ32-P-4QO
42PIN
transistor W2W
w2w transistor
oki Package SOJ
32-PIN
A204
MSM51V17900-70
MSM51V17900-80
uras 14
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