transistor A92
Abstract: TRANSISTOR A42 marking A42 a42 CHANGJIANG a42 TRANSISTOR a92 TRANSISTOR ic for cd rom FMQT4292 transistor BR A92
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-08A Plastic-Encapsulate Transistors FMQT4292 TRANSISTOR WBFBP-08A DESCRIPTION PNP and NPN Epitaxial Silicon Transistor 4x4×0.5 unit: mm FEATURES z Complementary Pair z Tow A42-Type NPN, Tow A92-Type PNP
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WBFBP-08A
FMQT4292
WBFBP-08A
A42-Type
A92-Type
-10mA
30MHz
transistor A92
TRANSISTOR A42
marking A42
a42 CHANGJIANG
a42 TRANSISTOR
a92 TRANSISTOR
ic for cd rom
FMQT4292
transistor BR A92
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-08A Plastic-Encapsulate Transistors FMQT4292 TRANSISTOR WBFBP-08A DESCRIPTION PNP and NPN Epitaxial Silicon Transistor 4x4×0.5 unit: mm FEATURES z Complementary Pair z Tow A42-Type NPN, Tow A92-Type PNP
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WBFBP-08A
FMQT4292
WBFBP-08A
A42-Type
A92-Type
-10mA
30MHz
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a42 a92 transistor
Abstract: transistor BR A92 transistor a42 FMQT4292 Transistors BR A92
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-08A Plastic-Encapsulate Transistors FMQT4292 TRANSISTOR WBFBP-08A 4x4×8L DESCRIPTION PNP and NPN Epitaxial Silicon Transistor FEATURES z Complementary Pair z Tow A42-Type NPN, Tow A92-Type PNP z
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WBFBP-08A
FMQT4292
WBFBP-08A
A42-Type
A92-Type
-200V,
-10mA
-30mA
30MHz
a42 a92 transistor
transistor BR A92
transistor a42
FMQT4292
Transistors BR A92
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DSI45-08A
Abstract: No abstract text available
Text: DSI45-08A Standard Rectifier VRRM = 800 V I FAV = 45 A VF = 1.23 V Single Diode Part number DSI45-08A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
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DSI45-08A
O-247
60747and
20130215d
DSI45-08A
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DSI45-16A
Abstract: No abstract text available
Text: DSI45-08A Standard Rectifier VRRM = 800 V I FAV = 45 A VF = 1.23 V Single Diode Part number DSI45-08A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
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DSI45-08A
O-247
60747and
20130215d
DSI45-16A
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DSI45-08A
Abstract: DSI45 DSI45-12A DSI45-16A DSI45-16AR ISOPLUS247 VF800
Text: DSI45-08A VRRM = I FAV = VF = Standard Rectifier Single Diode 800 V 45 A 1.23 V Part number DSI45-08A 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
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DSI45-08A
O-247
sine180°
DSI45
60747and
20090529a
DSI45-08A
DSI45
DSI45-12A
DSI45-16A
DSI45-16AR
ISOPLUS247
VF800
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Untitled
Abstract: No abstract text available
Text: DSI30-08A Standard Rectifier VRRM = 800 V I FAV = 30 A VF = 1.25 V Single Diode Part number DSI30-08A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
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DSI30-08A
O-220
60747and
20130107a
Rating30
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Untitled
Abstract: No abstract text available
Text: DSP8-08A Standard Rectifier VRRM = 2x 800 V I FAV = 8A VF = 1.08 V Phase leg Part number DSP8-08A Backside: anode/cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
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DSP8-08A
O-220
60747and
20130107b
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FM24C08A
Abstract: No abstract text available
Text: FM24C04A/08A 2-Wire Serial EEPROM Data Sheet May. 2011 Data Sheet FM24C04A/08A 2-Wire Serial EEPROM Ver 1.4 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS GROUP CO., LTD PRODUCT BEST SUITED TO THE CUSTOMER'S APPLICATION;
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FM24C04A/08A
FM24C04A/08A
LTD21)
FM24C08A
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Untitled
Abstract: No abstract text available
Text: FM24C04A/08A 2-Wire Serial EEPROM Data Sheet Sep. 2009 Data Sheet FM24C04A/08A 2-Wire Serial EEPROM Ver 1.2 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS CO., LTD PRODUCT BEST SUITED TO THE CUSTOMER'S APPLICATION; THEY DO
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FM24C04A/08A
FM24C04A/08A
RESPON021)
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Untitled
Abstract: No abstract text available
Text: FM24C04A/08A 2-Wire Serial EEPROM Data Sheet Feb. 2009 Data Sheet FM24C04A/08A 2-Wire Serial EEPROM Ver 1.0 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS CO., LTD PRODUCT BEST SUITED TO THE CUSTOMER'S APPLICATION; THEY DO
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FM24C04A/08A
FM24C04A/08A
RESPON021)
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Untitled
Abstract: No abstract text available
Text: DSI45-08A VRRM = I FAV = VF = Standard Rectifier Single Diode 800 V 45 A 1.23 V Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Housing: TO-247 Diode for main rectification For single and three phase bridge configurations Planar passivated chips
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DSI45-08A
O-247
sine180Â
DSI45
60747and
20090529a
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ATF-13136-TR1
Abstract: transistor tag 306 MARK A1 SOT-143 sot-23 6121 ATF13136-TR1 Amplifier Micro-X "marking code" D
Text: Tape and Reel Packaging for Semiconductor Devices Package Outlines 05, 08A, 36, 76, 84, 86, MSOP-3, SOIC-8, SOT-23, SOT-143, SOT-323, SOT-343, SOT-363, SSOP-16, TQFP-32, and TQFP-48 Technical Data Description Related Standard This data sheet is intended to
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OT-23,
OT-143,
OT-323,
OT-343,
OT-363,
SSOP-16,
TQFP-32,
TQFP-48
RS481,
OT-143
ATF-13136-TR1
transistor tag 306
MARK A1 SOT-143
sot-23 6121
ATF13136-TR1
Amplifier Micro-X "marking code" D
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4N0408
Abstract: No abstract text available
Text: IPG20N04S4-08A OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS on ,max4) 7.6 mΩ ID 20 A Features • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-10 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPG20N04S4-08A
PG-TDSON-8-10
4N0408
4N0408
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ISL9008IEMZ
Abstract: MARKING VO MARKING CAW CAY transistor sd caw sc70-5 ISL9008 "MARKING VO"
Text: ISL9008 NS DESIG W E N PART F OR NDED ACEM ENT E M M L ECO RE P Datasheet NO T R MENDED 08A M O ISL90 REC March 11, 2008 FN9235.1 Low Noise LDO with Low IQ and High PSRR Features ISL9008 is a high performance single low noise, high PSRR LDO that delivers a continuous 150mA of load current. It has
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ISL9008
ISL90
FN9235
ISL9008
150mA
5M-1994.
MO-203AA.
ISL9008IEMZ
MARKING VO
MARKING CAW
CAY transistor sd
caw sc70-5
"MARKING VO"
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HS508
Abstract: 108RAD
Text: S E M I C O N D U C T O R HS-508ARH/883S S IGN ES WD NE FOR H D E R END 08A Analog September 1997 OMM ee HS-5 C E S R NOT Features Radiation Hardened 8 Channel CMOS Multiplexer with Overvoltage Protection Pinouts • This Circuit Is Processed in Accordance to MIL-STD883 and Is Fully Conformant Under the Provisions of
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HS-508ARH/883S
HS1-508ARH/883
MIL-M-38510
MIL-STD883
HS-508ARH/883S
335oC
460oC
68e04
HS508
108RAD
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KSV864T4XXX
Abstract: KSV684T4xxx ksv684t
Text: 128Mb:x4,x8,x16 SDRAM TinyBGA SYNCHRONOUS DRAM FEATURES • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge
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128Mb
PC100-
PC133-compliant
096-cycle
KSV864T4XXX
KSV684T4xxx
ksv684t
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ELF850
Abstract: ELF650H ELF850M ELF850C ELF650B ELF850B ELF850Y ELF850D ELF860C ELF656V
Text: Line Filters • Series V ● Type 290 Dimensions in mm not to scale Recommended PWB piercing plan Marking 4-f1.2±0.1 21.5±1.0 2 21.0±1.0 16.0±1.0 3 13.00±0.05 10.0±0.5 4.0±1.0 13.0±0.5 10.00±0.05 4 1 4-f0.8±0.1 Examples Part No. Marking ELF18D290H
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ELF18D290H
ELF18D290C
ELF18D290A
ELF18D290G
ELF18D290L
ELF18D290P
ELF18D290M
ELF18D290R
ELF18D290S
ELF18D290E
ELF850
ELF650H
ELF850M
ELF850C
ELF650B
ELF850B
ELF850Y
ELF850D
ELF860C
ELF656V
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ELF850
Abstract: ELF860C ELF656V ELF650B ELF850C ELF850B elf666a ELF656Y ELF18D860B ELF650C
Text: Line Filters n Series N, High N Recommended PWB piercing plan Marking 29.0 1.0 l Type 20N, 21N Dimensions in mm not to scale ± ± 11.00 0.05 ± ± 11.0 0.5 ± 19.50 0.05 ± 20.0 1.0 " 4.0 1.0 ± 19.5 0.5 ± B 4Ð 1.2 0.1 ± 32.0 1.0 ! B ± 4Ð 0.8 0.1
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ELF20N006A
ELF20N008A
ELF20N010A
ELF20N013A
ELF20N015A
ELF20N016A
ELF20N018A
ELF20N020A
ELF20N022A
ELF20N024A
ELF850
ELF860C
ELF656V
ELF650B
ELF850C
ELF850B
elf666a
ELF656Y
ELF18D860B
ELF650C
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ELF850
Abstract: ELF450A ELF850B ELF850C ELF860 ELF650H ELF860C ELF650B ELF850W ELF650M
Text: Line Filters n Series N, High N Recommended PWB piercing plan Marking 29.0 1.0 l Type 20N, 21N Dimensions in mm not to scale ± ± 11.00 0.05 ± ± 11.0 0.5 ± 19.50 0.05 ± 20.0 1.0 " 4.0 1.0 ± 19.5 0.5 ± B 4Ð 1.2 0.1 ± 32.0 1.0 ! B ± 4Ð 0.8 0.1
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ELF20N006A
ELF20N008A
ELF20N010A
ELF20N013A
ELF20N015A
ELF20N016A
ELF20N018A
ELF20N020A
ELF20N022A
ELF20N024A
ELF850
ELF450A
ELF850B
ELF850C
ELF860
ELF650H
ELF860C
ELF650B
ELF850W
ELF650M
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1.14.002
Abstract: No abstract text available
Text: Data Sheet 1.14.002.-MICON 5 Short-travel Keyswitches , , , Data Sheet MICON 5 Short-travel Keyswitches and Accessories , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,
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PE4220
Abstract: PE4220-08MSOP-2000C PE4220-08MSOP-50A PE4220-EK PE4220-08-MSOP
Text: PRELIMINARY SPECIFICATION PE4220 SPDT Low Insertion Loss MOSFET RF Switch Product Description The PE4220 SPDT MOSFET RF Switch is designed to cover a broad range of applications from DC to 2.5 GHz. This single-supply switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL
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PE4220
PE4220
PE4220-08MSOP-2000C
PE4220-08MSOP-50A
PE4220-EK
PE4220-08-MSOP
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EV50
Abstract: No abstract text available
Text: 8 A 4 5 V T jw 1 5 0 V Fully Molded sim ilar to TO-220AB f° FC H S 08A 045 ttfl* Nihon Inter Electronics Corporation Specification i/s y Construction Application h^r — K Schottky B arrier Diode rHjjnliiSSÈÔÎîffl H igh Frequency Rectification MAXIMUM RATINGS T a —25°C: U nless otherw ise specified
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OCR Scan
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8A45VT
O-22QAB
FCHS08A045
133lJC
FCHS08Ar
UL94V-0
EV50
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MARKING SEIKO
Abstract: No abstract text available
Text: Table of Contents F e a tu re s. 1 Pin A ssignm ent. 1 Pin F unctions. 1
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