Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 LOC HM ALL RIGHTS RESERVED. BY - REVISIONS DIST 00 P LTR C D DESCRIPTION DATE DWN APVD REV; ECO-11-007274 08APR2011 GG RA REV; ECO-14-000046 02JAN2014 GG RA JACK HOUSING D D 1
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ECO-11-007274
ECO-14-000046
08APR2011
02JAN2014
1010R,
17JAN2006
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STN3N40K3
Abstract: 3n40k stn3n40k 29-Jun-2010 P008
Text: STN3N40K3 N-channel 400 V, 3 Ω, 1.8 A SOT-223 SuperMESH3 Power MOSFET Features Order code VDSS RDS on max ID PW STN3N40K3 400 V < 3.4 Ω 1.8 A 3.3 W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance
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STN3N40K3
OT-223
OT-223
STN3N40K3
3n40k
stn3n40k
29-Jun-2010
P008
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Untitled
Abstract: No abstract text available
Text: L9958 Low RDSON SPI controlled H-Bridge Datasheet − production data Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Programmable current regulation peak threshold by SPI up to 8.6 A typ. Operating battery supply voltage 4.0 V to 28 V
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L9958
16-bit
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Untitled
Abstract: No abstract text available
Text: L9958 Low RDSON SPI controlled H-Bridge Datasheet − production data Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Programmable current regulation peak threshold by SPI up to 8.6 A typ. Operating battery supply voltage 4.0 V to 28 V
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L9958
16-bit
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WT2003
Abstract: No abstract text available
Text: WEITRON WT2003A/L HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS P b Lead Pb -Free 1 16 General Description: 2 15 Ideally suited for interfacing between low-level logic circuitry and multiple peripheral power loads, the Series WT2003A/L high-voltage, high-current Darlington arrays feature continuous load current ratings
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WT2003A/L
WT2003A/L
08-Apr-2011
OP-16
WT2003
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h-bridge 6a
Abstract: ST L9958 IAG 080
Text: L9958 Low RDSON SPI controlled H-Bridge Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Programmable current regulation peak threshold by SPI up to 8.6 A typ. Operating battery supply voltage 4.0 V to 28 V Operating Vdd supply voltage 4.5 V to 5.5 V
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L9958
16-bit
h-bridge 6a
ST L9958
IAG 080
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L9958SB
Abstract: L9958XP MO-271 DC-32 diode L9958 ST L9958 MO271A
Text: L9958 Low RDSON SPI controlled H-Bridge Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Programmable current regulation peak threshold by SPI up to 8.6 A typ. Operating battery supply voltage 4.0 V to 28 V Operating Vdd supply voltage 4.5 V to 5.5 V
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L9958
16-bit
L9958SB
L9958XP
MO-271
DC-32 diode
L9958
ST L9958
MO271A
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Untitled
Abstract: No abstract text available
Text: STT3463P -3 A, -60 V, RDS ON 155 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high cell density process. Low RDS(on) assures minimal
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STT3463P
08-Apr-2011
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Untitled
Abstract: No abstract text available
Text: STEVAL-IHM025V1 1 kW 3-phase motor control demonstration board featuring the IGBT SLLIMM STGIPL14K60 Data brief Features • Min. input voltage: 125 VDC or 90 VAC ■ Max. input voltage: 400 VDC or 285 VAC ■ Max. output power for motors up to 1000 W ■
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STEVAL-IHM025V1
STGIPL14K60
STEVAL-IHM025V1
VIPer16
STGIPL14K60
STM3210B-EVAL
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STT3471P
Abstract: MosFET
Text: STT3471P -2A, -100V, RDS ON 350 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on)
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STT3471P
-100V,
08-Apr-2011
STT3471P
MosFET
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Untitled
Abstract: No abstract text available
Text: STN3N40K3 N-channel 400 V, 3 Ω typ., 1.8 A SuperMESH3 Power MOSFET in a SOT-223 package Datasheet - production data Features 4 1 2 Order code VDS RDS on max ID PTOT STN3N40K3 400V 3.4 Ω 1.8 A 3.3W • 100% avalanche tested 3 • Extremely high dv/dt capability
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STN3N40K3
OT-223
OT-223
AM01476v1
DocID17697
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MO271A
Abstract: No abstract text available
Text: L9958 Low RDSON SPI controlled H-Bridge Datasheet − production data Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Programmable current regulation peak threshold by SPI up to 8.6 A typ. Operating battery supply voltage 4.0 V to 28 V
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L9958
16-bit
MO271A
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Untitled
Abstract: No abstract text available
Text: L9958 Low RDSON SPI controlled H-Bridge Datasheet - production data '!0'03 '!0'03 '!0'03 PowerSO-20 PowerSSO24 PowerSO16 Features • Programmable current regulation peak threshold by SPI up to 8.6 A typ. Operating battery supply voltage 4.0 V to 28 V
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L9958
PowerSO-20
PowerSSO24
PowerSO16
16-bit
DocID17269
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Untitled
Abstract: No abstract text available
Text: WT358/WT2904 DAUL OPERATIONAL AMPLIFIERS P b Lead Pb -Free Features: * Internally Frequency Compensation. * Large Voltage Gain. * Low Input Bias Current. * Low Input Offset Voltage. * Large Output Voltage Swing. DIP-8 Description: * The WT358 / WT2904 consists of two independent, high gain and
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WT358/WT2904
WT358
WT2904
WT358
WT358M
WT2904
WT2904M
001uF
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sl1110 diode
Abstract: diode SL1010 SL1110 sL1010 diode SL1110B
Text: L ]S HEü_ _ _ _ _ _ _ MIL C O P Y R I G H T 2007 BY ¿ L i l i INUNb— TE R ELEA S ED FOR P U B LIC A TIO N F RE I F UE R V E R O E F F E N T L ICHUNG A LL ALLE CONNECTIVITY M A T E D W ITH: P A S S E N D ZU' LOC R EVIS IO N S DIST AENDERONGEN RIGHTS
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SL111
EGGMN04Q44
sl1110 diode
diode SL1010
SL1110
sL1010 diode
SL1110B
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