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    Infineon Technologies AG IPP08CN10L-G

    MOSFET N-CH 100V 98A TO220-3
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    DigiKey IPP08CN10L-G Tube 500
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    D475A

    Abstract: IPP08CN10L JESD22 PG-TO220-3 08CN10
    Text: 08CN10L G OptiMOS 2 Power-Transistor Product Summary Features V DS • N-channel, logic level R DS on ,max 8 m: ID 98 A • Excellent gate charge x R DS(on) product (FOM) 100 V • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		PDF IPP08CN10L PG-TO220-3 08CN10L D475A JESD22 PG-TO220-3 08CN10