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    08CNE8N Search Results

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    08CNE8N Price and Stock

    Rochester Electronics LLC IPP08CNE8NG

    N-CHANNEL POWER MOSFET
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    DigiKey IPP08CNE8NG Bulk 315
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    Infineon Technologies AG IPB08CNE8N-G

    MOSFET N-CH 85V 95A D2PAK
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    DigiKey IPB08CNE8N-G Reel 1,000
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    Infineon Technologies AG IPP08CNE8N-G

    MOSFET N-CH 85V 95A TO220-3
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    DigiKey IPP08CNE8N-G Tube 500
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    Infineon Technologies AG IPP08CNE8NG

    IPP08CNE8 - Power Field-Effect Transistor, 95A, 85V, N-Channel, MOSFET '
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    Rochester Electronics IPP08CNE8NG 925 1
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    08CNE8N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 08CNE8N G 08CNE8N G OptiMOS 2 Power-Transistor 08CNE8N G Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO263) 8.2 m: ID 95 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB08CNE8N IPI08CNE8N IPP08CNE8N PG-TO263-3 08CNE8N PG-TO262-3

    08CNE8N

    Abstract: No abstract text available
    Text: 08CNE8N G 08CNE8N G OptiMOS 2 Power-Transistor 08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB08CNE8N IPI08CNE8N IPP08CNE8N PG-TO263-3 08CNE8N PG-TO262-3 08CNE8N

    08CNE8N

    Abstract: IPP08CNE8N JESD22 PG-TO220-3
    Text: 08CNE8N G 08CNE8N G OptiMOS 2 Power-Transistor 08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB08CNE8N IPI08CNE8N IPP08CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 08CNE8N 08CNE8N JESD22 PG-TO220-3

    08CNE8N

    Abstract: IPP08CNE8N JESD22 PG-TO220-3 D475A C3175
    Text: 08CNE8N G 08CNE8N G OptiMOS 2 Power-Transistor 08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB08CNE8N IPI08CNE8N IPP08CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 08CNE8N 08CNE8N JESD22 PG-TO220-3 D475A C3175

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    IEC61249-2-21

    Abstract: IPP08CNE8N JESD22 PG-TO220-3 diode R 107
    Text: 08CNE8N G 08CNE8N G OptiMOS 2 Power-Transistor 08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB08CNE8N IPI08CNE8N IPP08CNE8N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 IEC61249-2-21 JESD22 PG-TO220-3 diode R 107