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    ABB Low Voltage Products and Systems 5SDF 08H6005

    Diode: hockey-puck rectifying; 5.5kV; 635A; Ø94,5/62,8mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 5SDF 08H6005 1
    • 1 $879.14
    • 10 $741.78
    • 100 $741.78
    • 1000 $741.78
    • 10000 $741.78
    		Get Quote

    Hitachi Energy 5SDF08H6005

    RECTIFIER MODULE - FAST RECOVERY/FRED
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD 5SDF08H6005 1
    • 1 -
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    08H6005 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 5500 585 18 4.5 1.3 3300 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 08H6005 PRELIMINARY Doc. No. 5SYA1116-01 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating


    Original     		PDF 08H6005 5SYA1116-01 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 5500 IFAVM = 640 IFRMS = 1000 IFSM = 18 VF0 = 2.65 rF = 2.1 VDClink = 3300 Fast Recovery Diode for GCT applications V A A kA V mΩ V 5SDF 08H6005 PRELIMINARY Doc. No. 5SYA 1116-01 July 98 Features • Patented free-floating silicon technology


    Original     		PDF 08H6005 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 5500 IFAVM = 640 IFRMS = 1000 IFSM = 18 VF0 = 2.65 rF = 2.1 VDClink = 3300 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 08H6005 PRELIMINARY Doc. No. 5SYA 1116-01 Jan. 99 Features • Patented free-floating technology


    Original     		PDF 08H6005 CH-5600

    igct abb

    Abstract: IGCT in switching operation
    Text: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 5500 640 1000 18 2.65 2.1 3300 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 08H6005 PRELIMINARY Doc. No. 5SYA 1116-01 Jan. 99 • • • • • Patented free-floating technology Industry standard housing


    Original     		PDF 08H6005 CH-5600 igct abb IGCT in switching operation

    abb gto characteristic

    Abstract: No abstract text available
    Text: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 5500 585 18x103 4.5 1.3 3300 V A A V mΩ V Fast Recovery Diode 5SDF 08H6005 PRELIMINARY Doc. No. 5SYA1116-01 Oct. 06 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating


    Original     		PDF 08H6005 5SYA1116-01 CH-5600 abb gto characteristic

    IGCT thyristor ABB

    Abstract: IGCT
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 5500 1800 18x103 1.9 0.9 3300 V A A V m V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 19L6020 Doc. No. 5SYA1250-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency


    Original     		PDF 19L6020 5SYA1250-00 CH-5600 IGCT thyristor ABB IGCT

    Pressure transmitter TBD

    Abstract: HFBR1528Z A125 B125 HFBR-1528Z HFBR-2521Z MTA-156 IGCT thyristor current max igct abb IGCT 7000
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 5500 3600 26x103 1.93 0.536 3300 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 50L5500 PRELIMINARY Doc. No. 5SYA1244-03 Aug. 11 • High snubberless turn-off rating  Optimized for medium frequency (<1 kHz)


    Original     		PDF 50L5500 5SYA1244-03 CH-5600 Pressure transmitter TBD HFBR1528Z A125 B125 HFBR-1528Z HFBR-2521Z MTA-156 IGCT thyristor current max igct abb IGCT 7000

    high power igct abb

    Abstract: igct 6500 42L6500
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 6500 4200 26x103 1.75 0.59 4000 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 42L6500 Doc. No. 5SYA1245-02 May 08 • High snubberless turn-off rating • High electromagnetic immunity • Simple control interface with status feedback


    Original     		PDF 42L6500 5SYA1245-02 CH-5600 high power igct abb igct 6500 42L6500

    high power igct abb

    Abstract: IGCT thyristor current max amp mta 156
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 6500 3800 26x103 1.88 0.56 4000 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 42L6500 Doc. No. 5SYA1245-03 June 10 • High snubberless turn-off rating • High electromagnetic immunity • Simple control interface with status feedback


    Original     		PDF 42L6500 5SYA1245-03 CH-5600 high power igct abb IGCT thyristor current max amp mta 156

    IGCT thyristor ABB

    Abstract: gct thyristor A125 B125 HFBR-1528 HFBR-2528 MTA-156 IGCT thyristor current max igct abb 5SHX19L6010
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 5500 1800 18x103 1.9 0.9 3300 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 19L6010 Doc. No. 5SYA1229-02 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


    Original     		PDF 19L6010 5SYA1229-02 CH-5600 IGCT thyristor ABB gct thyristor A125 B125 HFBR-1528 HFBR-2528 MTA-156 IGCT thyristor current max igct abb 5SHX19L6010

    FSV 052

    Abstract: No abstract text available
    Text: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus­ schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.


    OCR Scan     		PDF 05D2505 11F2501 07F4501 13H4501 5SDF14H4505 10H6004 01R2501 01R2502 01R2503 01R2504 FSV 052