Untitled
Abstract: No abstract text available
Text: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive
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Original
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PDF
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512Mb:
MT48H32M16LF
MT48H16M32LF/LG
09005aef82ea3742/Source:
09005aef82ea3752
|
MT48H32M16LF
Abstract: 32M16 MT48H16M32
Text: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page-size option1
|
Original
|
PDF
|
512Mb:
MT48H32M16LF
MT48H16M32LF/LG
54-ball
90-ball
IDD2/IDD71
09005aef82ea3742
MT48H32M16LF
32M16
MT48H16M32
|
SMD 5 PIN CODE G7
Abstract: smd transistor m6 smd diode B3 smd diode code B2 m7 smd diodes marking code E2 SMD smd diode M1 VFBGA marking code C3 SMD Transistor smd transistor h9
Text: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock
|
Original
|
PDF
|
512Mb:
MT48H32M16LF
MT48H16M32LF/LG
09005aef82ea3742/Source:
09005aef82ea3752
SMD 5 PIN CODE G7
smd transistor m6
smd diode B3
smd diode code B2
m7 smd diodes
marking code E2 SMD
smd diode M1
VFBGA
marking code C3 SMD Transistor
smd transistor h9
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Untitled
Abstract: No abstract text available
Text: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page-size option1
|
Original
|
PDF
|
512Mb:
MT48H32M16LF
MT48H16M32LF/LG
09005aef82ea3742
|
Untitled
Abstract: No abstract text available
Text: Advance‡ 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock
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Original
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PDF
|
128Mb:
MT48H8M16LF
MT48H4M32LF
09005aef82ea3742/Source:
09005aef82ea3752
|
Untitled
Abstract: No abstract text available
Text: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive
|
Original
|
PDF
|
512Mb:
MT48H32M16LF
MT48H16M32LF/LG
09005aef82ea3742/Source:
09005aef82ea3752
|
MT48H32M16LF
Abstract: 512MB SDR SDRAM CHIP
Text: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page-size option1
|
Original
|
PDF
|
512Mb:
MT48H32M16LF
MT48H16M32LF/LG
54-ball
90-ball
IDD2/IDD71
09005aef82ea3742
MT48H32M16LF
512MB SDR SDRAM CHIP
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