kester 245 solder wire
Abstract: CTLB059038-004 Kester 197
Text: 501-655 Qualification Test Report 09May07 Rev A Medical Circular Plastic Connector 1. INTRODUCTION 1.1. Purpose Testing was performed on the Tyco Electronics Medical Circular Plastic Connector to determine its conformance to the requirements of Product Specification 108-2249 Revision A.
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12Dec07
16Apr07.
CTLB059038-004.
kester 245 solder wire
CTLB059038-004
Kester 197
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EIA-364-18
Abstract: EIA-364-2 EIA-364-28 EIA-364-20 EIA-364-21 EIA-364-27 EIA-364-52 class 5 examination EIA-364-65 EIA-364-23
Text: Product Specification 108-2249 09May07 Rev A Medical Circular Plastic Connector 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics Medical Circular Plastic Connectors with push/pull locking.
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09May07
16Apr07.
EIA-364-18
EIA-364-2
EIA-364-28
EIA-364-20
EIA-364-21
EIA-364-27
EIA-364-52
class 5 examination
EIA-364-65
EIA-364-23
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74685
Abstract: 3595 AN609 Si4662DY
Text: Si4662DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4662DY
AN609
09-May-07
74685
3595
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74682
Abstract: 5622 AN609
Text: Si1070X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si1070X
AN609
09-May-07
74682
5622
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c 5521 datasheet
Abstract: AN609
Text: Si4632DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4632DY
AN609
09-May-07
c 5521 datasheet
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74686
Abstract: mosfet 4423 AN609
Text: Si4650DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4650DY
AN609
09-May-07
74686
mosfet 4423
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74600
Abstract: 8751 characteristics AN609 Si4558DY 26123
Text: Si4558DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4558DY
AN609
09-May-07
74600
8751 characteristics
26123
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74612
Abstract: 9613 AN609 Si4720CY
Text: Si4720CY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4720CY
AN609
09-May-07
74612
9613
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74607
Abstract: AN609 power MOSFET spice model n mosfet pspice parameters
Text: Si4620DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4620DY
AN609
09-May-07
74607
power MOSFET spice model
n mosfet pspice parameters
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74691
Abstract: AN609 SiA413DJ
Text: SiA413DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SiA413DJ
AN609
09-May-07
74691
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C
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UL94-V0
E323964
COMOV-09
26-DEC-07
09-MAY-07
02-NOV-05
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74694
Abstract: MOSfet 4362 4362 MOSFET 23738 on 4409 SUM90P10 SUM90P10-19 transistor on 4409 AN609 SUM90P10-19L
Text: SUM90P10-19L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUM90P10-19L
AN609
09-May-07
74694
MOSfet 4362
4362 MOSFET
23738
on 4409
SUM90P10
SUM90P10-19
transistor on 4409
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4093 DATASHEET
Abstract: 4093 N si2308 AN609 Si2308DS 34093
Text: Si2308DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si2308DS
AN609
09-May-07
4093 DATASHEET
4093 N
si2308
34093
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AN609
Abstract: Si4701BDY 968468
Text: Si4701BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4701BDY
AN609
09-May-07
968468
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74689
Abstract: AN609 Si5915BDC
Text: Si5915BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5915BDC
AN609
09-May-07
74689
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TLDR5400
Abstract: No abstract text available
Text: TLDR5400/TLDR6400 Vishay Semiconductors High Intensity LED, ∅ 5 mm Tinted Diffused FEATURES • Exceptional brightness • Wide viewing angle • Low forward voltage e2 • 5 mm T-1¾" tinted diffused package • Deep red color • Very high intensity even at low drive currents
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TLDR5400/TLDR6400
2002/95/EC
2002/96/EC
08-Apr-05
TLDR5400
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74687
Abstract: 4430 37210 4430 transistor AN609 Si4831BDY 236912
Text: Si4831BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4831BDY
AN609
09-May-07
74687
4430
37210
4430 transistor
236912
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CWR06
Abstract: 1047G
Text: CWR06 Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT Military, Surface Mount MIL-PRF-55365/4 Qualified FEATURES • Weibull Failure Rates B, C, D Exponential M, P, R, S • Tape and Reel available per EIA 481-1 and -2 • Termination finishes available; Gold Plate,
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MIL-PRF-55365/4
08-Apr-05
CWR06
1047G
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156 Tantalum Capacitor vishay
Abstract: MIL-PRF-55365 CWR06 cwr06f
Text: CWR06 Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT Military, Surface Mount MIL-PRF-55365/4 Qualified FEATURES • Weibull Failure Rates B, C, D Exponential M, P, R, S • Tape and Reel available per EIA 481-1 and -2 • Termination finishes available; Gold Plate,
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MIL-PRF-55365/4
18-Jul-08
156 Tantalum Capacitor vishay
MIL-PRF-55365
CWR06
cwr06f
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74605
Abstract: AN609 Si4569DY 772045
Text: Si4569DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4569DY
AN609
09-May-07
74605
772045
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74604
Abstract: AN609
Text: Si4565ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4565ADY
AN609
09-May-07
74604
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74688
Abstract: data sheet 74688 74688 application 7472 AN609 Si4952DY si4952
Text: Si4952DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4952DY
AN609
09-May-07
74688
data sheet 74688
74688 application
7472
si4952
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2242
Abstract: 74695 AN609 Si4812BDY 65630
Text: Si4812BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4812BDY
AN609
09-May-07
2242
74695
65630
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74684
Abstract: 4836 AN609 Si4505DY 121-872 62455
Text: Si4505DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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AN609
09-May-07
74684
4836
121-872
62455
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