Untitled
Abstract: No abstract text available
Text: SF21 thru SF28 Axial Lead Super Fast Rectifiers REVERSE VOLTAGE 50 TO 600 VOLTS CURRENT 2.0 AMPERE P b Lead Pb -Free Features: * Low forward voltage drop. * High current capability. * High reliability. * High surge current capability. Mechanical Data: DO-15
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DO-15
MIL-STD-202,
DO-15
09-Apr-07
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74394
Abstract: SIA914 SiA914DJ
Text: SPICE Device Model SiA914DJ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiA914DJ
S-70622Rev.
09-Apr-07
74394
SIA914
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Si5485DU
Abstract: Si5485DU-T1-E3
Text: New Product Si5485DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.025 at VGS = - 4.5 V - 12a 0.042 at VGS = - 2.5 V a - 12 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Si5485DU
Si548ed
08-Apr-05
Si5485DU-T1-E3
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Si3460BDV
Abstract: 74388
Text: SPICE Device Model Si3460BDV Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3460BDV
S-70623Rev.
09-Apr-07
74388
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA914DJ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiA914DJ
18-Jul-08
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Si3460BDV
Abstract: No abstract text available
Text: SPICE Device Model Si3460BDV Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3460BDV
18-Jul-08
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SMT CONNECTOR
Abstract: No abstract text available
Text: 1 2 3 4 5 MATERIAL: HOUSING MATERIAL: PA6T FLAMABILITY RATING: UL94-V0 COLOR: RED CONTACT MATERIAL: PHOSPHOR BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: MATT TIN OVER NICKEL QUALITY CLASS: 25 MATING CYCLES PITCH; 2.54 MM PER ROW A ENVIRONNEMENTAL: OPERATING TEMPERATURE: -40°C UP TO 105°C
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UL94-V0
100VAC
1000MOHM
500VAC/MN
10mOHM
E323964
69035728xx7x
07-APR-10
09-MAR-10
19-NOV-08
SMT CONNECTOR
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74389
Abstract: No abstract text available
Text: SPICE Device Model Si7904BDN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7904BDN
S-70624Rev.
09-Apr-07
74389
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74391
Abstract: No abstract text available
Text: SPICE Device Model SiE818DF Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiE818DF
S-70620Rev.
09-Apr-07
74391
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S-70619
Abstract: No abstract text available
Text: SPICE Device Model SiE820DF Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiE820DF
18-Jul-08
S-70619
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 MATERIAL: HOUSING MATERIAL: PA6T COLOR: RED CONTACT MATERIAL: PHOSPHOR BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: MATT TIN OVER NICKEL QUALITY CLASS: 25 MATING CYCLES PITCH; 2.54 MM PER ROW A ENVIRONNEMENTAL: OPERATING TEMPERATURE: -40°C UP TO 105°C
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UL94-V0
100VAC
1000MOHM
500VAC/MN
10mOHM
14-MAY-07
09-APR-07
02-JUL-07
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74390
Abstract: v448
Text: SPICE Device Model SiA912DJ Vishay Siliconix Dual N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiA912DJ
S-70621Rev.
09-Apr-07
74390
v448
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Untitled
Abstract: No abstract text available
Text: New Product SiP21106/7/8 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator APPLICATIONS • • • • • • FEATURES • SC70-5L 2.1 x 2.1 x 0.95 mm • TSOT23-5L (3.05 x 2.85 x 1.0 mm) • TSC75-6L Package (1.6 x 1.6 x 0.55 mm), Cellular Phones, Wireless Handsets
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SiP21106/7/8
150-mA
SC70-5L
TSOT23-5L
TSC75-6L
TSOT23-5L
SC70-5L
SiP21106
08-Apr-05
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V448
Abstract: 74390
Text: SPICE Device Model SiA912DJ Vishay Siliconix Dual N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiA912DJ
18-Jul-08
V448
74390
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiE820DF Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiE820DF
S-70619Rev.
09-Apr-07
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7904BDN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7904BDN
18-Jul-08
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WK-05-060WT-350
Abstract: TN501 tesla potentiometer 195 TK 4838 IR SENSOR ac ripple neutralizer strain gauge amplifier NAS-942 tetra-etch 11654 hahn transformer EA-06-250BF-350
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book strain gage technology technical data vishay micro-measurements vse-db0088-0708 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0088-0708
WK-05-060WT-350
TN501
tesla potentiometer 195
TK 4838 IR SENSOR
ac ripple neutralizer
strain gauge amplifier
NAS-942
tetra-etch
11654 hahn transformer
EA-06-250BF-350
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MTA-100
Abstract: No abstract text available
Text: THIS LOC DOCUMENT. REVISIO N S D IS T P CM DRAWING IS A CONTROLLED LTR D E S C R IP TIO N DATE DWN APVD 0 0 D D1 REVISED PER E C O - 0 9 - 0 2 1 51 0 1A O B S O L E T E P A R T S : O B S O L E T E PER D.RENAUD/D.SINISI DIMENSION KW DB KK AEG 09APR07 ECO —07 —0 0 7 2 6 0
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09APR07
ECO-09-021
15AUG09
20JAN94
27JAN92
MTA-100
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B1122
Abstract: B1115 IP PLC JIS B1122
Text: THIS DRAWING IS UNPUBLISHED. JSL COPYRIGHT - &E l Ea SH > F ò r BY TYCO ELECTRONICS CORPORATION. P u B l ió a T ió n LOC A LL RIGHTS RESERVED. REVISIONS DIST J S E DESCRIPTION LTR < 24. 6 ECR—07—0081 41 REVISED DATE DWN APVD 09APR07 TS KB 18. 7 D D
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09APR07
28P0SITI0N
31MAR2000
B1122
B1115
IP PLC
JIS B1122
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC R E V IS IO N S D IS T CM 00 P LTR D E S C R IP T IO N L REVISED PER E C O -07- 007260 DIMENSION IN BRACKET ARE DATE DWN APVD 09APR07 KW DB INCHES. 1 1.48 + 0 .08 [.452 + .003] TIN 640638-3 TIN-LEAD 640638-1 FINISH
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ECO-07-007260
09APR07
250CT2005
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MTA-100
Abstract: No abstract text available
Text: THIS LOC DOCUMENT. R E V IS IO N S D IS T CM DRAWING IS A CONTROLLED 00 P LTR D D1 D E S C R IP TIO N DATE DWN ECO —07 —0072 60 09APR07 REVISED PER E C O - 0 9 - 0 2 1 510 15 AUG09 1. D IM E N S IO N A O B S O LE T E IN BRACKET ARE PARTS: O B S O LE T E
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09APR07
ECO-09-021
15AUG09
20JAN94
27JAN92
MTA-100
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC R E V IS IO N S D IS T CM 00 P LTR D E S C R IP T IO N L REVISED PER E C O -07- 007260 DIMENSION IN BRACKET ARE DATE DWN APVD 09APR07 KW DB INCHES. 1 1.48 + 0 .08 [.452 + .003] TIN 640639-2 TIN-LEAD 640639-1 FINISH
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ECO-07-007260
09APR07
250CT2005
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MTA-100
Abstract: No abstract text available
Text: THIS LOC 00 P LTR D D1 1\ D E S C R IP TIO N DATE R E V IS E D PER DIMENSIONS DWN E C O - 09- 021510 15AU G 09 CIS BRA CK ET ARE APVD KW DB KK AEG 09APR07 E C O —0 7 —0 0 7 2 6 0 O B S O LE T E PARTS: O B S O LETE PER D.RENAUD/D.SINISI ALL DOCUMENT. R E V IS IO N S
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09APR07
ECO-09-021
15AUG09
20JAN94
27JAN94
MTA-100
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. AA VW COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 3 2 - LOC ALL RIGHTS RESERVED. DIST CM R E VIS IO N S P LTR H1 DESCRIPTION REVISED PER E C 0 - 0 7 - 0 0 7 2 4 2 P IN S TO C O M P L Y SPEC 109- 1 1-3.
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09APR07
08JUN05
29JUL2003
31MAR2000
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