Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR DESCRIPTION A2 A3 A4 1 DWN DATE REVISED PER ECO-11-005150 UR-marking new REVISED PER ECR-13-014508 TE-Logo HMR AK AK RK UKo UKo 25MAR2011 09DEC2011 16SEP2013 APVD 3 + Relay - bottom view
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ECO-11-005150
ECR-13-014508
25MAR2011
09DEC2011
16SEP2013
7168-m
01JUL2008
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2011 2 3 XXXXX2011 RELEASED FOR PUBLICATION LOC J ALL RIGHTS RESERVED. BY Tyco Electronics Japan G.K. 1 REVISIONS DIST - P B C 44.1 D 32.6 DATE DWN APVD REVISED 09DEC2011 T.N N.Y REVISED ECR-14-000923 21JAN2014 T.N
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XXXXX2011
09DEC2011
ECR-14-000923)
21JAN2014
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1462041-1
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR DESCRIPTION A2 A3 A4 1 DWN DATE REVISED PER ECO-11-005150 UR-marking new REVISED PER ECR-13-014508 TE-Logo HMR AK AK RK UKo UKo 25MAR2011 09DEC2011 16SEP2013 APVD 3 + Relay - bottom view
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ECO-11-005150
ECR-13-014508
25MAR2011
09DEC2011
16SEP2013
7168-m
18JUN2008
1462041-1
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am1117
Abstract: 88N65M5 STW88N65M5
Text: STW88N65M5 N-channel 650 V, 0.024 Ω, 84 A, MDmesh V Power MOSFET in TO-247 Features Order code VDSS @Tjmax. RDS on max. ID STW88N65M5 710 V < 0.029 Ω 84 A • Worldwide best RDS(on) in TO-247 ■ Higher VDSS rating ■ Higher dv/dt capability ■ Excellent switching performance
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STW88N65M5
O-247
O-247
am1117
88N65M5
STW88N65M5
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ES11M
Abstract: ES11M~ES15M
Text: ES11M~ES15M 50V ~ 600V 1.0 Amp Surface Mount Efficient Fast Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTIONS SOD-123M Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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ES11M
ES15M
OD-123M
UL94-V0
09-Dec-2011
ES11M~ES15M
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SMF101M
Abstract: SMF101M~SMF107M
Text: SMF101M~SMF107M 50V ~ 1000 V 1.0 Amp Surface Mount Fast Recovery Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOD-123M Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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SMF101M
SMF107M
OD-123M
OD-123
UL94-V0
09-Dec-2011
SMF101M~SMF107M
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msp430a
Abstract: No abstract text available
Text: MSP430F532x 80-Pin FET tool and target board combination - MSP-FET430U80A - TI . TI Home > Semiconductors > Microcontrollers > Page 1 of 2 Worldwide In English MSP430F532x 80-Pin FET tool and target board combination MSP430F532x 80-Pin FET tool and target board combination Status: ACTIVE
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MSP430F532x
80-Pin
MSP-FET430U80A
MSP-FET430U80A
MSP-FET430UIF
MSP430
msp430a
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mcs2 cross
Abstract: C4V2 C6V5 C6V2 ST MARK C1B4 BTC01 STA309BTR
Text: STA309B Multichannel digital audio processor with FFX Preliminary data Features • 8 channels of 24-bit FFX® ■ >100 dB SNR and dynamic range ■ Selectable 32 kH-192 kHz input sampling rates ■ 6 channels of DSD/SACD and PDM input ■ ■ Digital gain/attenuation +58 dB to -100 dB in
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STA309B
24-bit
kH-192
32-bit
mcs2 cross
C4V2
C6V5
C6V2 ST
MARK C1B4
BTC01
STA309BTR
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C5V1
Abstract: No abstract text available
Text: STA309B Multichannel digital audio processor with FFX Preliminary data Features • 8 channels of 24-bit FFX® ■ >100 dB SNR and dynamic range ■ Selectable 32 kH-192 kHz input sampling rates ■ ■ 6 channels of DSD/SACD and PDM input ■ ■ Digital gain/attenuation +58 dB to -100 dB in
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STA309B
24-bit
kH-192
32-bit
C5V1
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am1117
Abstract: STW88N65M5 88N65M5 schematic diagram of mosfet based inverters STW88N6
Text: STW88N65M5 N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh V Power MOSFET in TO-247 package Datasheet — production data Features Order code VDSS @Tjmax. RDS on max. ID STW88N65M5 710 V < 0.029 Ω 84 A • Worldwide best RDS(on) in TO-247 ■ Higher VDSS rating
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STW88N65M5
O-247
O-247
am1117
STW88N65M5
88N65M5
schematic diagram of mosfet based inverters
STW88N6
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dka020-338g
Abstract: KSS020-33MG astm-B194 kss 216
Text: .100/ 2.54mm Pitch Board to Board Connectors Board to Board Connectors Table of Models Female Single Row Dual Row Desc: Molded (RNB, RLNB, RDRS) Material: High Temp. Liquid Crystal Polymer (LCP) Index: -40°C to 260°C (-40°F to 500°F) • Male and female connectors are
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DKA020-338G
09-Dec-2011
dka020-338g
KSS020-33MG
astm-B194
kss 216
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am1117
Abstract: stw88n65
Text: STW88N65M5 STWA88N65M5 N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh V Power MOSFET in TO-247 and TO-247 long leads packages Datasheet - production data Features Order codes VDSS @Tjmax. RDS on max. ID 710 V < 0.029 Ω 84 A STW88N65M5 STWA88N65M5 2 3 • Worldwide best RDS(on) in TO-247
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STW88N65M5
STWA88N65M5
O-247
O-247
DocID022522
am1117
stw88n65
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