2N3019A
Abstract: 2N3019HR 15384 st marking code
Text: 2N3019HR Hi-Rel NPN bipolar transistor 80 V - 1 A Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL
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2N3019HR
2N3019AHR
2N3019A
2N3019HR
15384
st marking code
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STRX
Abstract: ARM str7 ARM str9
Text: RVDK ARM RealView Developer Kit RVDK for ST development environment for STR7 and STR9 microcontrollers Data Brief Features The RVDK for ST includes: • RealView ICE-ME (RVICE-ME), ARM’s incircuit debugger and programmer, featuring USB host interface and industry standard
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Untitled
Abstract: No abstract text available
Text: r n ThiS GRa w n C & unP u Su Sh B . WLEAStt P M PU&JWWN er tyco aecTROwcs corporation. R E V IS IO N S ALL RIGHTS RESERVED. 22 M E MECHANICAL: A MATERIALS: HOUSING - THERMOPLASTIC PET POLYESTER FLAMMABILITY RATING UL 94V-0. SHIELD - .010" THICK, C26800 BRA SS PREPLATED WITH 30jj.inch SEMI-BRIGHT
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OCR Scan
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09FEB2009
C26800
100jainch
10JAN05
MAG45
1000pF.
31UAR2000
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Untitled
Abstract: No abstract text available
Text: 2STA1694 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -120 V ■ Complementary to 2STC4467 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC s ct u d o 3 Applications ■
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2STA1694
2STC4467
2STA16and
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520200104
Abstract: soc2907 ESCC 5202-001 package LCC-3
Text: 2N2907AHR Hi-Rel 60 V - 0.6 A PNP bipolar transistor Features Parameter Value BVCEO 60 V IC max 0.6 A 3 1 1 2 2 3 HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■
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2N2907AHR
2N2907AHR
520200104
soc2907
ESCC 5202-001
package LCC-3
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MMC02G
Abstract: "Manufacturer ID" eMMC 2Gbyte NAND flash emmc controller eMMC driver emmc 16g emmc csd emmc Initialization emmc jedec emmc jedec mechanical standard
Text: NAND08GAH0J NAND16GAH0H 1-Gbyte, 2-Gbyte, 1.8 V/3.3 V supply, NAND flash memories with MultiMediaCard interface Preliminary Data Features • Packaged NAND flash memory with MultiMediaCard interface LFBGA153 ■ Up to 2 Gbytes of formatted data storage
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NAND08GAH0J
NAND16GAH0H
MMC02G
"Manufacturer ID" eMMC
2Gbyte NAND flash
emmc controller
eMMC driver
emmc 16g
emmc csd
emmc Initialization
emmc jedec
emmc jedec mechanical standard
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PDF
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2N2907AUB
Abstract: No abstract text available
Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
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Original
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2N2907AHR
2N2907AHR
MIL-PRF19500
DocID15382
2N2907AUB
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N3019HR Hi-Rel NPN bipolar transistor 80 V, 1 A Datasheet — production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified
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2N3019HR
2N3019HR
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soc2907
Abstract: 2N2907AUB
Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
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Original
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2N2907AHR
2N2907AHR
MIL-PRF19500
DocID15382
soc2907
2N2907AUB
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PDF
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SOC2907A
Abstract: 520200104 ESCC 5202-001 soc2907 520200105 SOC2907AHRB MARKING SMD PNP TRANSISTOR R 5202001 SOC-2907A 2N2907AHR
Text: 2N2907AHR Hi-Rel PNP bipolar transistor 60 V - 0.6 A Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range 3 1 1 2 2 3 -65°C to +200°C TO-18 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified
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Original
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2N2907AHR
2N2907AHR
SOC2907A
520200104
ESCC 5202-001
soc2907
520200105
SOC2907AHRB
MARKING SMD PNP TRANSISTOR R
5202001
SOC-2907A
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Untitled
Abstract: No abstract text available
Text: STX690A High performance low voltage NPN transistor Features • Very low collector to emitter saturation voltage ■ DC current gain, hFE > 100 ■ 3 A continuous collector current ■ 40 V breakdown voltage V BR CER Applications ■ Power management in portable equipment
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STX690A
O-92AP
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Untitled
Abstract: No abstract text available
Text: RVDK ARM RealView Developer Kit RVDK for ST development environment for STR7 and STR9 microcontrollers Data Brief Features The RVDK for ST includes: • RealView ICE-ME (RVICE-ME), ARM’s incircuit debugger and programmer, featuring USB host interface and industry standard
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
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Original
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2N2907AHR
2N2907AHR
MIL-PRF19500
DocID15382
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PDF
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2N2907AUB
Abstract: No abstract text available
Text: 2N2907AHR Hi-Rel 60 V - 0.6 A PNP transistor Datasheet — production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics ■ Hermetic packages ■ ESCC and JANS qualified
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Original
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2N2907AHR
2N2907AHR
MIL-PRF19500
2N2907AUB
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PDF
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8nm60ND
Abstract: STP8NM60ND STD8NM60ND STF8NM60ND STU8NM60ND 8nm60
Text: STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND N-channel 600 V, 0.59 Ω , 7 A, FDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS @Tjmax Type RDS(on) max ID 3 2 3 STD8NM60ND 650 V < 0.70 Ω 7A STF8NM60ND 650 V < 0.70 Ω 7A STP8NM60ND
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STD8NM60ND,
STF8NM60ND
STP8NM60ND,
STU8NM60ND
O-220,
O-220FP,
STD8NM60ND
STP8NM60ND
8nm60ND
STP8NM60ND
STD8NM60ND
STF8NM60ND
STU8NM60ND
8nm60
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amplifier QFN16
Abstract: TS4998
Text: STEVAL-CCA008V1 Demonstration board for 2x1 W differential input stereo audio amplifier based on the TS4998 Data Brief Features • Operating range from VCC = 2.7 V to 5.5 V ■ 1 W output power per channel @VCC =5 V,THD+N =1%, RL =8 Ω ■ Ultra low standby consumption:10 nA typ.
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STEVAL-CCA008V1
TS4998
QFN16
STEVAL-CCA008V1
TS4998
amplifier QFN16
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N3019HR Hi-Rel NPN bipolar transistor 80 V - 1 A Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL
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Original
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2N3019HR
2N3019AHR
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PDF
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Untitled
Abstract: No abstract text available
Text: STX690A High performance low voltage NPN transistor Features • Very low collector to emitter saturation voltage ■ DC current gain, hFE > 100 ■ 3 A continuous collector current ■ 40 V breakdown voltage V BR CER ) s ( ct u d o Applications ■ Power management in portable equipment
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STX690A
O-92AP
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J2N2907A
Abstract: JS2907 SOC2907A JANS2N2907AUBT 2N2907AUB07 520200104 jans2n2907aub ST TO-18 marking code SOC-2907A soc2907ahrb
Text: 2N2907AHR Hi-Rel 60 V - 0.6 A PNP transistor Datasheet — production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics ■ Hermetic packages ■ ESCC and JANS qualified
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Original
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2N2907AHR
2N2907AHR
MIL-PRF19500
J2N2907A
JS2907
SOC2907A
JANS2N2907AUBT
2N2907AUB07
520200104
jans2n2907aub
ST TO-18 marking code
SOC-2907A
soc2907ahrb
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PDF
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520200107R
Abstract: 2N2907A1 2N2907AUB
Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
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Original
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2N2907AHR
2N2907AHR
MIL-PRF19500
DocID15382
520200107R
2N2907A1
2N2907AUB
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PDF
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PC817 opto
Abstract: 10uF 450v NTC-10 NTC-10 ohm VIPER17H VIPER17 VIPER17HN PC817 STEVAL-ISA060V1 TR TL431
Text: STEVAL-ISA060V1 6 W single output SMPS demonstration board based on the VIPER17 Data Brief Features • Input voltage range Vin: 90 VRMS to 265 VRMS ■ Output voltage Vout: 12 V ■ Max output current Iout: 500 mA ■ Precision of output regulation ∆Vout_LF: ±5%
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STEVAL-ISA060V1
VIPER17
VIPER17
PC817 opto
10uF 450v
NTC-10
NTC-10 ohm
VIPER17H
VIPER17HN
PC817
STEVAL-ISA060V1
TR TL431
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PDF
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stbb1
Abstract: MARKING BB1 STBB1PUR DFN10 GRM188R60J106ME47D VLCF4020T-2R2N1R7
Text: STBB1xx 1 A, high efficiency single inductor dual mode buck-boost DC-DC converter Preliminary data Features • Buck-boost DC-DC converter ■ Operating input voltage range from 2.0 V to 5.5 V ■ 2% DC feedback voltage tolerance ■ Synchronous rectification
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DFN10
DFN10
stbb1
MARKING BB1
STBB1PUR
GRM188R60J106ME47D
VLCF4020T-2R2N1R7
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PDF
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