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    Text: N AMER PHILIPS/DISCRETE b'lE D • bb53R31 0D3Q47S 34R M A P X Philips Semiconductors Product specmcauon Pow erM OS transistor G E N E R A L D E SC R IP TIO N N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


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    PDF bb53R31 0D3Q47S BUK436-1000B bbS3T31