Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC =13 D • 0S0433Ö 0G037M7 □ ■ A L GR T-91-01 PROCESS YFA Process YFA NPN Power Darlington Transistor Process YFA is a double-diffused epitaxial planar N P N silicon Darlington pair. It is designed for use in high-gain, high-power amplifiers. Its complement is
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0S0433Ã
0G037M7
T-91-01
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 0G037G5 b ■ T-91-01 PROCESS JLA Process JLA NPN Small-Signal Transistor P ro c e ss J L A is a double-diffused epitaxial planar N P N silicon device. It is d esign ed for u se in generalp urp ose amplifier and high-current switching circuits.
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0SD433Ã
DDD37DS
T-91-01
800mA
D37Db
T-91-Q1
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2N4235
Abstract: No abstract text available
Text: SOLITRON EVICES INC 0Olitran 4flE ]> • Ô3bûb02 0G037b4 2fl7 M S O D -2 I Devices, Inc. NO.: S P E C I F I C A T I O N S 2N4235 TYPE- PNP silicon power ’ TRANSISTOR C A SE: TO-5 MAXIMUM RATINGS Voltage, Collector to Base VCB0 Voltage, Collector to Emitter (V CE0)
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0G037b4
2N4235
100MA
-100mA
-250mA
-500mA
-125mA
2N4235
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sk150da
Abstract: SK150D
Text: Öl3bt.71 0G0374fl 1Gb S1E » SEMIKRON SEMIKRON INC Maximum Ratings Conditions VcEVsus VcEV VcBO Vebo lc lc > CM I II If = II O o Ie = 0 D. C. tp = 1 ms -lc Ib Ptot Tvj Tease = 25 °C Tstg Visol Values Units 1000 V 1000 1000 7 150 300 150 8 1000 - 4 0 . . . + 150
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0G0374fl
Q0P37S1
SK150DA100D
sk150da
SK150D
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0520K
Abstract: ecg1027 3243J G1027
Text: P H IL IP S E C G INC 17E tjk53c]2fl 0G037Ö2 E C G 1027 AUDIO POWER AMPLIFIER MODULE semiconductors FO R 13 W ATTS TYP. A F POWER A M PLIFIER 1 POW ER SUPPLY EQUIVALENT C IR C U IT ► 7 ,2 * 3.24 . 3j j O i 1 *4 0.S 3.0 *I H f.2 0 vii. ,_j dim ensions
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tjk53c
0G037
EC01027
000370b
ECG1027
0520K
ecg1027
3243J
G1027
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NJM2068
Abstract: NJM206BM NJM2068 equivalent f 4558 RS 4558 NJM2068V 4558 NJM2068D power amp 4558 NJM2068L
Text: LOW -HOISE DUAL OPERATIONAL AMPLIFIER NJM2068 T he NJM2068 is a high perform ance, Low noise dual operational am plifier. This am plifier features popular pin-out, superior noise perform ance, and superior total harm onic distortion. This amplifier also features guaranteed noise perfor
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NJM2068
NJM2068
Ta-25Â
NJM206BM
00037MM
NJM206BM
NJM2068 equivalent
f 4558
RS 4558
NJM2068V
4558
NJM2068D
power amp 4558
NJM2068L
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NJN2114D
Abstract: NJM2114 NJM2114M NJM2114D NJM5532 RLS600
Text: HIGH PERFORMANCE LOW-NOISE DUAL OPERATIONAL AMPLIFIER NJM2114 N JM 2 1 1 4 is a h ig h p e rfo rm a n c e d u a l lo w n o is e o p e r a tio n a l a m p lifie r w h ic h c o u ld b e re p la c e d in a p p lic a tio n w ith N JM 5 5 3 2 . C o m p a rin g to N JM 5 5 3 2 , it h a s s u p e r io r s p e c ific a tio n s o n S le w R a te . B a n d w id th a n d O ffset V o lta g e .
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NJM2114
NJM2114
NJM5532.
NJM5532,
600mW
0G037fc
NJN2114D
NJM2114M
NJM2114D
NJM5532
RLS600
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HY62256B-I Series _ 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY62256B-I
1DC05-11-MAY94
HY62256BLP-I
HY62256BLLP-I
HY62256BU-I
HY62256BLU-I
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80c51/31 MHS
Abstract: No abstract text available
Text: October 1992 IlM l 80C31/80C51 DATASHEET CMOS SINGLE-CHIP 8 BIT MICROCONTROLLER 80C31/80C51-L : 0 TO 6 MHz WITH 2.7 V < Vcc < 6 V 80C51F : 80C51 WITH PROTECTED ROM 80C31/80C51:0 TO 12 MHz 80C31/80C51-1: 0 T 0 16 MHz 80C31-S/80C51-S : 0 TO 20 MHz FEATURES •
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80C31/80C51
80C31/80C51-L
80C51F
80C51
80C31/80C51
80C31/80C51-1:
80C31-S/80C51-S
80C51)
80C31
80c51/31 MHS
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957a
Abstract: 75T957A-1P Teltone M-957 75T957-IP qau3
Text: IIE SILICON SYSTEMS INC Mmsuskms 0 2 5 3 ^ 5 Qaü37?Q 1 • D SSI 75T957/957A DTMF Receiver with Diai Tone Reject Filtér — T -7 S -T 7 -0 7 May, 1989 FEATURES DESCRIPTION The SSI 75T957/957A combines swltched-capacitor and digital frequency measuring techniques to decode
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75T957/957A
22-pin
24-pin
75T957A
75T957
957a
75T957A-1P
Teltone M-957
75T957-IP
qau3
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ERA15-06
Abstract: ERB12-02 ERA15-04 ERC04-10 ERA15-08 ERA15-10 ERA17-02 ERA17-04 ERB12-01 ERB12-04
Text: General Purpose Diodes Ratings and characteristics Type M a x im u m ra tin g V rrm V r D C V o lts V o lts ERA15-01 ER A 1 5-02 100 80 200 160 ER A 15-04 400 320 ER A 15-06 ERA15-08 ERA15-10 600 480 800 640 1000 800 ERA17-02 ERA17-04 200 160 400 320 lo
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A15-01
A15-02
A15-04
ERA15-06
ERA15-08
ERA15-10
ERA17-02
ERA17-04
ERB12-01
ERB12-02
ERA15-04
ERC04-10
ERB12-04
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lX5285
Abstract: scsi2 scsi3
Text: U N Doc #; 5285 JSVi>f . . j olì»'. • > K ' 3 ’‘ & W S S i I >.s A " 800mA M I C R O E L E C T R O N I C S Ti-ie I n f i n 1i t e P o w e r o f I n n o v a t i o n P *n L o w D r o p o u t S o u rce A n d S in k D r e l i m i n a r y KEY DESC R IPTIO N
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800mA
LX5285
FAST-20
10kHz
0G03733
scsi2 scsi3
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FCC64
Abstract: No abstract text available
Text: PHILIPS E C G INC 17É D • bfcjS3T2fl D0D377D 4 T - 74-05-01 E C G 1024 AUDIO POWER AMPLIFIER MODULE semiconductors F O R 8 W A T T S T Y P . A F P O W E R A M P L IF IE R 1 P O W E R SU P P L Y *-!* . ,2-sa i *4 W 4 ► IL o . J u ►•*■<> dimensions in mm
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D0D377D
0G03773
ECG1024
T--74--05--01
EC01024
FCC64
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Untitled
Abstract: No abstract text available
Text: & C I A T O - " S b S IS b l 0DD37S1 ADS-946 2 Tb • 14-Bit, 8MHz Sampling A/D Converters INNOVATION and EXCELLENCE FEATURES • • • • • • • • • • 14-bit resolution 8MHz guaranteed sampling rate No missing codes over full military temperature range
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0DD37S1
ADS-946
14-Bit,
14-bit
-75dB)
24-pin,
MIL-STD-883
ADS-946
DS-0314
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DD660
Abstract: No abstract text available
Text: M OSEL VITEU C PRELIMINARY V1816J32 1M x 32 EDO MEMORY MODULE Features Description • ■ ■ ■ ■ ■ The V1816J32 memory module is organized as 1,097,152 x 32 bits in a 72-lead single-in-line module. The 2M x 32 memory module uses 4 Mosel-Vitelic 1M x 16 DRAMs. The x32 modules
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V1816J32
72-lead
cycles/16ms
b3S33
DD660
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Untitled
Abstract: No abstract text available
Text: QUAD OPERATIONAL AMPLIFIER NJM2060 T he NJM2060 integrated circuit is a high-gain, w ide-bandw idth, quad operational am plifier capable of driving 20V peakto-peak into 400fi loads. T he NJM2060 com bines many of the features of the NJM2058 as well as providing the capability
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NJM2060
NJM2060
400fi
NJM2058
NJM4560.
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Untitled
Abstract: No abstract text available
Text: DM2200EDRAM 4Mb x 1 Enhanced Dynamic RAM r ^ M T R O N Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ Interleave SRAM Cache for 8ns Burst Read ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes
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DM2200EDRAM
256-byte
DM2200
DM2200J
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IN5908
Abstract: 1N590A
Text: 602 941-6300 FEATURES TRANSIENT ABSORPTION ZENER • 5.0 VOLTS REVERSE STANO-OFF VOLTAGE • DESIGNED FOR T 2L LOGIC PROTECTION • 1500 WATTS PEAK PULSE POWER DISSIPATION The 1N5907 TAZ, packaged in a hermetically sealed glass-to-metal pack age, is available in JAN, JANTX and JANTXV qualified to MIL-STD19500/500. The 1N5907 and 1N5908 protect TTL, ECL, DTL, MOS and MSI
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1N5907
MIL-STD19500/500.
1N5908
1N5907)
DO-13
0G0370G
1N5908)
IN5908
1N590A
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AAY42
Abstract: germanium diode
Text: B K C IN T E R N A T IO N A L D3E D I 117^03 □□0G037 ~T fl ^ 3 Type No. AAY42 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKCInternational Electronicslnc. Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377
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00Q37
AAY42
MIL-S-19500,
AAY42
germanium diode
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Untitled
Abstract: No abstract text available
Text: POWER 9100 GRAPHICS CONTROLLER August 22, 1994 Chapter 1. Technical Overview Single-Chip 2-D Graphics Accelerator Powerful Graphics Features O Ultra-high-speed local-bus display controller uses w orkstation display technology to give m aximum acceleration w ith graphical user interfaces such as
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208-pin
P9100-050-PFP
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80c31n
Abstract: IS80C51 i80c51 80c31 mhs 80c51/31 MHS
Text: P R E V IE W M l DATA SHEET_ _8 0 C 3 1 U / 8 0 C 5 1 u HIGH SPEED 0 to 42 MHz SINGLE-CHIP 8 BIT MICROCONTROLLER 80C31|i : ROMLESS VERSION OF THE 80051^1 80C31 ji/80C51 n-S : 0 TO 20 MHz 80C31 |i-S/80C51 (i-25 : OTO 25 MHz 80031p/80C51|i-30 :0 TO 30 MHz
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80C31
ji/80C51
80C31
i-S/80C51
80031p/80C51
n/80C51
fi-36
80c31n
IS80C51
i80c51
80c31 mhs
80c51/31 MHS
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Untitled
Abstract: No abstract text available
Text: VITESSE VS8061/8062 Data Sheet 2.5 Gbits/sec 16-Bit Multiplexer/ Demultiplexer Chipset Features • Serial Data Rate up to 2.5 Gb/s • 16-bit Wide ECL 100K Compatible Parallel Data Interface • Differential High Speed Data Outputs • Differential or Single-ended High Speed Data
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VS8061/8062
16-Bit
VS8061
VS8062:
52-pin
VS8062
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ML4041CQ
Abstract: No abstract text available
Text: Micro Linear ML4041, ML4042 Read Data Processor GENERAL DESCRIPTION FEATURES The ML4041, ML4042 is a monolithic bipolar integrated circuit used in disk drive systems to detect amplitude peaks generated by the recording heads during a Read operation. Connected to the read/write amplifier
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ML4041,
ML4042
0Q037Qb
ML4042
037G7
ML4041CQ
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Untitled
Abstract: No abstract text available
Text: L I N Doc #: 7705 5 V S upply V oltage S uper viso r with R eference T h e I n f i n i t e P o w e r o f I n n o v a t i o n P r e l i m i n a r y DESCRIPTION T h e LX7705 series o f voltage supervisory circuits are greatly im proved m onolithic integrated circuits for m icroprocessor and
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LX7705
G37147
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