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    D934

    Abstract: Z8.2 bd938
    Text: BD934; 936 BD938; 940 BD942 PH IL IP S INTERNATIONAL SbE D • 7110fl2b 0G43GSfl TDD « P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended fo r use in output stages o f audio and television am plifier circuits where high peak powers can occur.


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    PDF BD934; BD938; BD942 7110fl2b 0G43GSfl BD933; T-33-19 D934 Z8.2 bd938