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    Abstract: No abstract text available
    Text: PowerMOS transistor_BUZ90_ N AMER PHILIPS/DISCRETE OLE D • bb53131 0Q14S51 T ■ T -3 < p ii May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		BUZ90_ bb53131 0Q14S51 BUZ90 bb53T31 T-39-11 T-39-11- PDF