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    2SC2937

    Abstract: T8W40F1
    Text: SHINDENGEN ELECTRIC MIE li F G AEnaa? D 0QD007b 3 - r * « .3 3 -/ j? h s h e j »Outline Dimensions 5.010 3 O1“1 w e i g h t • 6.1g u n i t - mm • Ratings Maximum 2SC2937 Conditions T 8 W 4 0 fi Unit Storage Tem perature T s tg - 5 5 ~ + 150 °C Junction Tem perature


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    PDF 00D0D7b 2SC2937 T8W40F1 T8W40F1

    InGaAs PIN photodiode 2600 nm

    Abstract: epitaxx InGaAs Epitaxx ingaas photodetector
    Text: EPITAXX INC 2ME D 33bQilDi, 0Q00Q75 5 t EPITAXX ETX1006R26 qi-m 2.6 |im InGaAs Photodiode Description: EPITAXX ETX 100GR26 is an InGaAs PIN photodiode which responds to wavelengths up to 2600 nm. The device incorporates a 100 micron diameter compositionally graded


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    PDF 33bQilDi, 0Q00Q75 ETX1006R26 100GR26 2400nm 100GR 33bQ40b 0QD007b ETX100GR26 InGaAs PIN photodiode 2600 nm epitaxx InGaAs Epitaxx ingaas photodetector