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    diode uj1

    Abstract: No abstract text available
    Text: :UJ1 nUMÊiïïMIE 2SK2768-01 L,S > Features - N-channel MOS-FET 90 0 V 5,5Q 3,5A 80W FAP-IIS Series Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated


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    PDF 2SK2768-01 0D04721 diode uj1