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    Part ECAD Model Manufacturer Description Download Buy
    RTKA215300E00000BU Renesas Electronics Corporation RAA215300 Socket Board Visit Renesas Electronics Corporation
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    0E0000 Price and Stock

    Hosonic Electronic Co Ltd E3SB50E00000AE

    XTAL 3225 50MHZ, 18PF
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    DigiKey E3SB50E00000AE Digi-Reel 2,995 1
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    E3SB50E00000AE Cut Tape 2,995 1
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    Hosonic Electronic Co Ltd E3SB10E000007E

    XTAL 3225 10MHZ, 12PF
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    DigiKey E3SB10E000007E Cut Tape 1,975 1
    • 1 $0.37
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    E3SB10E000007E Digi-Reel 1,975 1
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    Hosonic Electronic Co Ltd E3SB50E00002AE

    XTAL 3225 50MHZ, 9PF
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    DigiKey E3SB50E00002AE Digi-Reel 1,500 1
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    E3SB50E00002AE Cut Tape 1,500 1
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    Renesas Electronics Corporation R0E00008AKCE00

    EMULATOR E8A FOR H8 AND M16C
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    DigiKey R0E00008AKCE00 Box 31 1
    • 1 $149.39
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    Mouser Electronics R0E00008AKCE00 23
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    Newark R0E00008AKCE00 Bulk 316 1
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    New Advantage Corporation R0E00008AKCE00 4 1
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    EAO AG 45-2T00.20E0.000

    INDICATOR PANEL LED RED
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    DigiKey 45-2T00.20E0.000 Bulk 14 1
    • 1 $10.22
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    Newark 45-2T00.20E0.000 Bulk 10
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    RS 45-2T00.20E0.000 Bulk 10 Weeks 1
    • 1 $10.65
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    Sager 45-2T00.20E0.000 1
    • 1 $10.91
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    0E0000 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MX25L1635D

    Abstract: MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25
    Text: MX25L1635D MX25L1635D DATASHEET P/N: PM1374 1 REV. 1.5, OCT. 01, 2008 MX25L1635D Contents FEATURES . 5


    Original     		MX25L1635D PM1374 MX25L1635D MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25 PDF

    Untitled

    Abstract: No abstract text available
    Text: MX25V8005 8M-BIT [x 1] 2.5V CMOS SERIAL FLASH FEATURES GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 8,388,608 x 1 bit structure • 256 Equal Sectors with 4K byte each - Any Sector can be erased individually • 16 Equal Blocks with 64K byte each


    Original     		MX25V8005 100mA 50MHz 256-byte 120ms PDF

    MX25U4035

    Abstract: MX25U8035 PM1394 land pattern for Uson
    Text: MX25U4035 MX25U8035 MX25U4035/MX25U8035 DATASHEET P/N: PM1394 1 REV. 1.0, MAR. 09, 2009 MX25U4035 MX25U8035 Contents FEATURES. 5


    Original     		MX25U4035 MX25U8035 MX25U4035/MX25U8035 PM1394 MX25U4035 MX25U8035 PM1394 land pattern for Uson PDF

    Untitled

    Abstract: No abstract text available
    Text: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4


    Original     		MX25L1673E PM1912 PDF

    AT49BV802A

    Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


    Original     		3405E AT49BV802A AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu PDF

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		W19B320AT/B w19b320 PDF

    S 3590A

    Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout


    Original     		PDF

    M68681

    Abstract: 53c90 53c90 NCR MPC505 AN947 MC68681 MPC505EVB NCR SCSI M68MPCBUG M-6868
    Text: Freescale Semiconductor, Inc. CONTENTS CHAPTER 3 FUNCTIONAL DESCRIPTION Freescale Semiconductor, Inc. 3.1 3.2 3.3 INTRODUCTION. 3-1 EVB DESCRIPTION. 3-1


    Original     		32-Bit MPC505EVBUM/D M68681 53c90 53c90 NCR MPC505 AN947 MC68681 MPC505EVB NCR SCSI M68MPCBUG M-6868 PDF

    AT25DF081A

    Abstract: AT25DF081A-SH AT25DF081A-SSH-T 8715a
    Text: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible • • • • • • • • • • • • • • • • – Supports SPI Modes 0 and 3 – Supports RapidS Operation – Supports Dual-Input Program and Dual-Output Read


    Original     		100MHz 85MHz 32-Kbyte 64-Kbyte 64-Kbytes 8715B AT25DF081A AT25DF081A-SH AT25DF081A-SSH-T 8715a PDF

    M29W320DT

    Abstract: M29W320D M29W320DB TFBGA48
    Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


    Original     		M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48 PDF

    AM29F016D-120

    Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
    Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm


    Original     		Am29F016D Am29F016 Am29F016B AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 PDF

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor PDF

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


    Original     		Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM PDF

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


    Original     		S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032 PDF

    Untitled

    Abstract: No abstract text available
    Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3


    Original     		W28J320B/T 16/4M PDF

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


    Original     		S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00 PDF

    Untitled

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original     		PDF

    MB91F467EA

    Abstract: No abstract text available
    Text: MB91460E-DS705-00002-1v3-E.fm Page 1 Wednesday, September 29, 2010 9:47 AM FUJITSU SEMICONDUCTOR DATA SHEET DS705-00002-1v3-E 32-bit Microcontroller CMOS FR60 MB91460E Series MB91F467EA • DESCRIPTION MB91460E series is a line of general-purpose 32-bit RISC microcontrollers designed for embedded control


    Original     		MB91460E-DS705-00002-1v3-E DS705-00002-1v3-E 32-bit MB91460E MB91F467EA MB91F467EA PDF

    Untitled

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide


    Original     		W28F321BT/TT 32MBIT W28F321, W28F321 PDF

    lv8011

    Abstract: AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T
    Text: Features • Single Supply for Read and Write: 2.7V to 3.3V BV , 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout


    Original     		1265E 01/00/xM lv8011 AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T PDF

    th50vsf1400

    Abstract: BA30
    Text: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory


    OCR Scan     		50VSF1400/1401ACXB TH50VSF1400/1401ACXB 152-bit 216-bit 48-pin 50VSF1400/1401 th50vsf1400 BA30 PDF