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    Abstract: No abstract text available
    Text: B 23 9 -9 7 2N5911, 2N5912 DUAL N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • WIDEBAND DIFFERENTIAL AMPLIFIERS Absolute maximum ratings at TA = 25°C Continuous Forward Gate Current 50 mA Total Device Power Dissipation 500 mW Power Derating 4 mW°C


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    PDF 2N5911, 2N5912 2N9911 NJ30L 0GG07H3