Untitled
Abstract: No abstract text available
Text: 3^E I> POIilEREX INC m / m • 7ST4b21 0Q044Eb T * P R X c x Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107, 72003 Le Mans, France (43) 41.14.14 KEF24503HB High-Beta Six-Darlington
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7ST4b21
0Q044Eb
BP107,
KEF24503HB
Amperes/600
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Untitled
Abstract: No abstract text available
Text: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117400A
HY5117400A
117400A
1AD27-10-MAY9S
HY5117400AJ
HY5117400AT
Y5117400ASLT
HY5117400AR
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Untitled
Abstract: No abstract text available
Text: November 1996 ^ M lcro L in e a r ML511, ML511 R-Series 4, 6, 7, or 8-Channel Ferrite Read/Write Circuits GENERAL DESCRIPTION FEATURES The ML511 is a bipolar monolithic read/write circuit designed for use with center-tapped ferrite recording heads. The ML511 and ML511R are performance upgrades from the
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ML511,
ML511
ML511R
ML501
ML501R.
32R511/511R
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1720b
Abstract: No abstract text available
Text: IBM11M1720B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write parity applications • System Performance Benefits: - • 1Mx72 Fast Page Mode DIMM • Performance: -60 -70 Buffered inputs except RAS, Data
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IBM11M1720B
1Mx72
110ns
130ns
50H4346
IBM11M1720B
000HH1B
1720b
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EL2009
Abstract: EL2009C ELLS 110 w s p 1620 transformer EL2009CT QCX0002 high speed op amp voltage booster E2130 MDP0028
Text: hiCH PfRf QHMAMCI? ANA_jîi i NTCG«MTlî , CIPC.,t " EL2009C 90 MHz 1 A m p B u ffer .1 m plifier F e a tu r e s G en era l D e sc r ip tio n • H igh slew rate—3000 V//xs • Wide bandwidth— 125 M Hz @ R l = SOil 90 M Hz @ Rl = 10il • Output current— 1A continuous
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EL2009C
EL2009CT
T0-220
MDP0028
O-220
EL2009
amplifi16
3121S57
EL2009C
ELLS 110
w s p 1620 transformer
QCX0002
high speed op amp voltage booster
E2130
MDP0028
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metal film fused resistor 47
Abstract: V2044 408C AD847 EL2044C EL2044CN EL2044CS LM6361 MIL-I-45208A EL2044C equivalent
Text: HIGH PERFORMANCE EL2044C Loir Power/l.otr Voilage 120 MHz L'nitg-Cain Stable Operational -1 m plifier F e a tu r e s G en era l D e sc r ip tio n • 120 M H z —3 dB bandw idth • U nity-gain stable • Low supply current = 5.2 mA a t Vs = ± 15V • W ide supply range
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EL2044C
150ft
1000ft
500ft
AD847
LM6361
3121S57
metal film fused resistor 47
V2044
408C
EL2044C
EL2044CN
EL2044CS
LM6361
MIL-I-45208A
EL2044C equivalent
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Untitled
Abstract: No abstract text available
Text: A p p lic a tio n N o te s A V A I L A B L E AN19 • AN38 • AN41 • AN61 X25640 64K 8K x 8 Bit Advanced SPI Serial E2PROM With Block Lock Protection FEATURES DESCRIPTION • 1 MHz Clock Rate • Low Power CMOS — 200|iA Standby Current — 5mA Active Current
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X25640
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Untitled
Abstract: No abstract text available
Text: G M 82C 650 GoldStar GOLDSTAR ELECTRON CO ,LTD GoldStar Sound Generator 1. G eneral Description The GM82C650 is a high performance digital sound generator, which is applicable for many musical applications like PC sound card, sound module, karaoke, keyboard,and
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GM82C650
20bits
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BF410C
Abstract: a5175
Text: asc » • fl23SbQS 000447*1 1 « S I E G . 7^3/-Z.S^ Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 SIEMENS AKTI EN GE SE LLS CH AF BF 410 A BF 410 B BF 410 C BF 410 D BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect
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fl23SbQS
Q68000-A5440
68000-A5172
68000-A5173
68000-A5174
68000-A5175
0Q044
BF410D
BF410C
a5175
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Untitled
Abstract: No abstract text available
Text: Hl • ■ V . ■■ EL2244C/EL2444C D ual/Q uad Ixitc-Power 60 MHz Vnity-tiain Stable Op A mp . F e a tu re s G en era l D e sc r ip tio n • 60 M Hz gain-bandwidth product • Unity-gain stable • Low supply current per Amplifier = 5.2 mA at Vs = ± 15V
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EL2244C/EL2444C
150ft
1000ft
500ft
EL2244C/Ã
L2444C
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Untitled
Abstract: No abstract text available
Text: Microsem i a m m m w m enm w n, at m a 5 8 0 P le a s a n t S t. W a te rto w n , M A 0 2 1 7 2 P H : 61 7 9 2 6 -0 4 0 4 2N3501 F A X : (6 1 7 ) 9 2 4 -1 2 3 5 Features 150 Volts 500mAmps • M e e ts M IL -S -1 9 5 0 0 /3 6 6 • C o lle c to r-B a s e V o lta g e 1 5 0 V
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2N3501
500mAmps
100kHz
100MHz)
10mAdc,
10Vdc,
10Vdc.
12Vdc,
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Untitled
Abstract: No abstract text available
Text: X25041 4K im 512x8 Bit SPI Serial E2PROM With BLOCK LOCK PROTECTION FEATURES DESCRIPTION • 1MHz Clock Rate • SPI Modes 0,1 & 1,0 • 5 1 2 X 8 Bits — 4 Byte Page Mode • Low Power CMOS — 150|iA Standby Current — 3mA Active Current • 2.7V To 5.5V Power Supply
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X25041
512x8
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s11ms1
Abstract: No abstract text available
Text: SU M S1/S11M S2 Phototriac Couplers S 2 1 M S 1 /S 2 1 M S 2 SHARP ELEK/ MELEC DIV EbE S11MS1 /S11MS2 S21MS1 /S21MS2 1. 2. 3. 4. 5. For 100V lines S11MS1 S11MS2 ^ HSRPJ 4-Pin, Mini-flat Type Phototriac Coupler Features U ltra-com pact, m ini-flat p ack age type
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S1/S11M
S11MS1
/S11MS2
S21MS1
/S21MS2
500Vrms
S11MS2
S21MS2
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transistor BD 680
Abstract: transistor BD 677 bd678 TRANSISTOR Bd 137
Text: ESC » • flS3 5 bOS QOOMB'îT 3 « S I E G T—33 - 3 1 BD 676 BD 678 ' BD 680 PNP Silicon Darlington Transistors SIEMENS A K T I E N G E S E L L S C H A F 143" ° Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibasepower darlington transistors
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Type00
BD680
fi23SbOS
transistor BD 680
transistor BD 677
bd678
TRANSISTOR Bd 137
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RQW 130
Abstract: A10q
Text: HY51V16400A Series •HYUNDAI 4M X 4-bit CM OS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V16400A
V16400Ato
4b75D6fi
0QD441Q
1AD31-00-MAY95
HY51V16400AJ
HY51V16400ASU
RQW 130
A10q
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AD9101
Abstract: No abstract text available
Text: S P T 9101 S P T SIGNAL PROCESSING TECHNOLOGIES 125 MSPS SAMPLE-AND-HOLD AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • Second Source of AD9101 350 MHz Sampling Bandwidth 125 MHz Sampling Rate Excellent Hold Mode Distortion
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AD9101
SPT9101
SPT9101SIS
SPT9101SIC
SPT9101SCU
20LSOIC
AD9101
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686 ami bios
Abstract: ami bios 686 RF DELAY LINE 4.3GH A1m anode BZT 030 SARS 03 star delta FORWARD / REVERSE WIRING CONNECTION PX334 845 Mother board Diagram cops instrument display
Text: S TANDARD PRODUCT PMC-Sierra, Inc. ISSUE 3 P M 7 3 7 5 LASAR-155 LOCAL ATM SAR & PHYSICAL LA YER 1. FEA TU R ES • Single-chip Peripheral Component Interface PCI Bus Local ATM Network Interface using SONET/SDH framing at 155.52 or 51.84 Mbit/s and ATM Adaptation Layer 5 (AAL-5).
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PM7375
LASAR-155
32-bit
686 ami bios
ami bios 686
RF DELAY LINE 4.3GH
A1m anode
BZT 030
SARS 03
star delta FORWARD / REVERSE WIRING CONNECTION
PX334
845 Mother board Diagram
cops instrument display
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goldstar gm16c450
Abstract: goldstar GM16c550 gm16c450 GOLDSTAR GD75188 GM16C550 GD75188 GOLDSTAR marking
Text: _ . IC . GM16C550 c i 0 ic r c > c c ir a s y n c h r o n o u s c o m m u n ic a tio n s ELEMENT WITH FIFOs GOLDSTAR e l e c t r o n CO., l t d . Descriptions Features The G M 16 C 5 50 is an asynchronous communi cations element A C E that is functionally
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GM16C550
GM16C550is
GM16C450,
16byte
GM16C450.
RS-232-C/D
goldstar gm16c450
goldstar GM16c550
gm16c450
GOLDSTAR GD75188
GD75188
GOLDSTAR marking
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