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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P ld B = 36 dBm at 6.4 GHz to 7.2 GHz	OCR Scan	PDF	TIM6472-4L MW50850196 CH72SD 0Q22547 TIM5964-4L TCH7250

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P ld B = 36 dBm at 6.4 GHz to 7.2 GHz

OCR Scan

PDF

TIM6472-4L MW50850196 CH72SD 0Q22547 TIM5964-4L TCH7250