0Q3T17G Search Results

irlm110

Abstract: No abstract text available
Text: IRLM110A Advanced Power MOSFET FEATURES b v dss = 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S on = ■ Lower Input Capacitance lD = 1.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA (Max.) @ VDS = 100V